Results 71 to 80 of about 8,192 (300)

Generation of narrow-band terahertz radiation via optical rectification of femtosecond pulses in periodically poled lithium niobate [PDF]

open access: yes, 2000
We demonstrate a promising technique for generating narrow-band terahertz electromagnetic radiation. Femtosecond optical pulses are propagated through a periodically poled lithium-niobate crystal, where the domain length is matched to the walk-off length
A. Galvanauskas   +11 more
core   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

open access: yesAdvanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj   +8 more
wiley   +1 more source

Generation of THz vector and scalar vortex beams by optical rectification along threefold symmetry axis in zinc blende crystals

open access: yesAPL Photonics
Synthesis of THz frequency fields with generalized orbital angular momentum, the so called higher-order Poincaré beams are of interest to future communications systems and charged particle accelerators.
Yaqun Liu, Valdas Pasiskevicius
doaj   +1 more source

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

open access: yesAdvanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger   +14 more
wiley   +1 more source

Nonlinear Dielectric Metasurfaces for Terahertz Applications

open access: yesPhotonics
The terahertz (THz) region of the electromagnetic spectrum, spanning from 0.1 to 30 THz, represents a prospering area in photonics, with transformative applications in imaging, communications, and material analysis.
Forouzan Habibighahfarokhi   +9 more
doaj   +1 more source

Rational Tuning of Hygroscopic Oscillation of Stacked Nanoflake Assemblies for Continuous Ambient Energy Harvesting

open access: yesAdvanced Materials, EarlyView.
Stacked nanoflake assembly (SNA) membranes can oscillate autonomously, offering opportunities for soft actuation and energy harvesting. This work uncovers the physical mechanism behind the sustained oscillation of SNA membranes in gradient humidity and identifies three governing dimensionless parameters, enabling rational design for optimizing SNA ...
Zijing Zhang   +5 more
wiley   +1 more source

A Chirped Characteristic-Tunable Terahertz Source for Terahertz Sensing

open access: yesSensors
In broadband terahertz waves generated by femtosecond lasers, spatial chirp will be simultaneously produced with the introduction of angular dispersion.
Feilong Gao, Mingzhe Jiang, Shaodong Hou
doaj   +1 more source

Scalable terahertz generation by large-area optical rectification at 80 TW laser power [PDF]

open access: yes, 2019
We demonstrate high-energy terahertz generation from a large-aperture (75-mm diameter) lithium niobate wafer by using a femtosecond laser with energy up to 2 J.
Dogeun Jang   +13 more
core   +1 more source

A Dual‐Bioresponsive and Programmable Microneedle Matrix as a Bioinspired Coupler for Orchestrating Diabetic Bone Regeneration

open access: yesAdvanced Materials, EarlyView.
This project developed a smart bandage‐like patch (a microneedle array) for repairing diabetic bone damage. It intelligently senses signals from infection and inflammation, then releases its medicines in a specific, timed sequence: first an antibacterial agent, then an anti‐inflammatory agent, and finally growth factors.
Yu Wang   +10 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

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