Results 151 to 160 of about 21,020,521 (317)

PAIR: Reconstructing Single‐Cell Open‐Chromatin Landscapes for Transcription Factor Regulome Mapping

Advanced Science, EarlyView.
scATAC‐seq analysis is often constrained by limited sequencing depth, extreme sparsity, and pervasive technical missingness. PAIR is a probabilistic framework that restores scATAC‐seq accessibility profiles by directly modeling the native cell–peak bipartite structure of chromatin accessibility.
Yanchi Su, Qi Qi, Yi Fan, Yubo Wang, Gaoyang Hao, Ka‐Chun Wong, Yunhe Wang, Xiangtao Li   +7 more
wiley   +1 more source

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs. [PDF]

Micromachines (Basel), 2023
Langpoklakpam C, Liu AC, You NJ, Kao MH, Huang WH, Shen CH, Tzou J, Kuo HC, Shieh JM.   +8 more
europepmc   +1 more source

Synergistic Pyro‐Phototronics and Structural Anisotropy in CsAg2I3/GaN Heterostructures for High‐Performance Polarization‐Sensitive UV Photodetectors

Advanced Science, EarlyView.
The development of polarization‐sensitive ultraviolet photodetectors is limited by poor heterojunction quality and low polarization sensitivity. This study integrates synthesized CsAg2I3 single crystals with intrinsic non‐centrosymmetry into van der Waals heterojunction devices, demonstrating pronounced pyro‐phototronic effect.
Yalin Zhai, Siqi Wang, Peng Guo, Songling Feng, Peng Wan, Jilong Tang, Caixia Kan, Hui Li, Daning Shi, Mingming Jiang   +9 more
wiley   +1 more source

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization. [PDF]

Micromachines (Basel), 2023
Li X, Wang M, Zhang J, Gao R, Wang H, Yang W, Yuan J, You S, Chang J, Liu Z, Hao Y.   +10 more
europepmc   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor. [PDF]

Micromachines (Basel), 2022
Liu CH, Huang CR, Wang HC, Kang YJ, Chiu HC, Kao HL, Chu KH, Kuo HC, Chen CT, Chang KJ.   +9 more
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy. [PDF]

Micromachines (Basel), 2022
Wang H, Yuan C, Xin Y, Shi Y, Zhong Y, Huang Y, Lu G.   +6 more
europepmc   +1 more source

Proximity Ferroelectricity in Compositionally Graded Structures

Advanced Electronic Materials, EarlyView.
We perform the finite element modeling of the polarization switching in the compositionally graded AlN‐Al1‐xScxN and ZnO‐Zn1‐xMgxO structures and reveal the switching of spontaneous polarization in the whole structure in all these systems. The coercive field to switch is significantly lower than the electric breakdown field of the unswitchable AlN and ...
Eugene A. Eliseev, Anna N. Morozovska, Sergei V. Kalinin, Long‐Qing Chen, Venkatraman Gopalan   +4 more
wiley   +1 more source

Sulfurization engineering of single-zone CVD vertical and horizontal MoS₂ on p-GaN heterostructures for self-powered UV photodetectors. [PDF]

Nanoscale Adv, 2023
Zulkifli N'A, Zahir NH, Abdullah Ripain AH, Said SM, Zakaria R.   +4 more
europepmc   +1 more source