Results 281 to 290 of about 21,020,521 (317)

p‐GaN Selective Nitridation to Obtain a Normally Off p‐GaN Gate AlGaN/GaN High‐Electron‐Mobility Transistors

physica status solidi (RRL) – Rapid Research Letters, 2023
In this article, a method of nitrogen plasma treatment is proposed to achieve normally off p‐GaN/AlGaN/GaN high‐electron‐mobility transistors, and the related mechanism is proposed. A nitrogen plasma treatment is employed to deplete holes in the p‐GaN layer to change the surface characteristics.
Shaoqian Lu, Guohao Yu, Yingfei Sun, Xu Yuan, Zhongkai Du, Bingliang Zhang, Lu Wang, Yu Li, Dongdong Wu, Zengli Huang, Zhongming Zeng, Xulei Qin, Baoshun Zhang   +12 more
openaire   +1 more source

NOx gas sensors based on layer-transferred n-MoS2/p-GaN heterojunction at room temperature: Study of UV light illuminations and humidity

, 2020
Transition metal dichalcogenides (TMDs) have gained extensive interest due to their phenomenal optoelectrical and electrochemical properties. Recently, TMDs are used as one of the auspicious materials for the chemical gas sensor application owing to ...
M. Reddeppa, Byung-Guon Park, G. Murali, Soo Ho Choi, Nguyen Duc Chinh, Dojin Kim, Woochul Yang, Moon-Deock Kim   +7 more
semanticscholar   +1 more source

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs

IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020
In this article, we systematically investigate the OFF-state drain-voltage-stress-induced threshold voltage ( $V_{\mathrm {TH}}$ ) instability in Schottky-type p-GaN gate high electron mobility transistors (HEMTs).
Junting Chen, M. Hua, Jin Wei, Jiabei He, Chengcai Wang, Zheyang Zheng, K. J. Chen   +6 more
semanticscholar   +1 more source

p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability

, 2020
By deploying a surface reinforcement layer (SRL) at the interface between Schottky metal and p-GaN in the gate stack, a p-GaN gate high-electron-mobility transistor (HEMT) with enhanced gate reliability is demonstrated. Prior to the gate metal deposition,
Li Zhang, Zheyang Zheng, Song Yang, Wenjie Song, Jiabei He, K. J. Chen   +5 more
semanticscholar   +1 more source

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

IEEE Electron Device Letters, 2020
This work demonstrates five-channel AlGaN/ GaN Schottky barrier diodes (SBDs) fabricated on a 4-inch wafer with a sheet resistance of $115~\Omega $ /sq. A novel edge termination based on regrown p-GaN is proposed to manage the electric field crowding in
M. Xiao, Yunwei Ma, K. Cheng, Kai Liu, A. Xie, E. Beam, Yu Cao, Yuhao Zhang   +7 more
semanticscholar   +1 more source

Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p ++ -GaN layer

Journal of Crystal Growth, 2017
Growth conditions are used to control the residual carbon impurity incorporation in p++-GaN layers. Specific contact resistance (ρc) with various residual carbon concentrations has been investigated through the circular transmission line model (CTLM) method and secondary ion mass spectroscopy (SIMS) analysis.
Feng Liang, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Wei Liu, Xiang Li, Shuangtao Liu, Yao Xing, Liqun Zhang, Hui Yang, Heng Long, Mo Li   +14 more
openaire   +1 more source

A high performance self-powered ultraviolet photodetector based on a p-GaN/n-ZnMgO heterojunction

Journal of Materials Chemistry C, 2020
A high performance p-GaN/n-ZnMgO heterojunction photodiode was demonstrated and investigated.
Yong‐Bao Zhu, Kewei Liu, Qiu Ai, Qichao Hou, Xing Chen, Zhenzhong Zhang, Xiu-Hua Xie, Binghui Li, D. Shen   +8 more
semanticscholar   +1 more source

Modified p-GaN Micro-wells with Vertically Aligned 2D-MoS2 for Enhanced Photoelectrochemical Water-Splitting.

ACS Applied Materials and Interfaces, 2020
Photoelectrochemical (PEC) water splitting has been considered as of the future technology to store solar-energy in the chemical-bonds. However, due to the search of ideal heterostructured materials for photoanode/cathode, the full potential of this ...
D. Ghosh, P. Devi, Praveen Kumar
semanticscholar   +1 more source

E-mode p-GaN Gate HEMT with p-FET Bridge for Higher VTH and Enhanced VTH Stability

International Electron Devices Meeting, 2020
a novel p-GaN gate topology is proposed to inherently increase threshold voltage (VTH) and enhance VTH stability. The gate consists of a conventional Schottky-type p-GaN gate and a normally-on p-channel FET bridge connecting source and gate.
M. Hua, Junting Chen, Chengcai Wang, Ling Liu, Lingling Li, Junlei Zhao, Zuoheng Jiang, Jin Wei, Li Zhang, Zheyang Zheng, K. J. Chen   +10 more
semanticscholar   +1 more source

Al contacts to nanoroughened p-GaN

Microelectronics Journal, 2009
Nanoroughening of a p-GaN surface using nanoscale Ni islands as an etch mask was utilized to investigate the feasibility for the flip-chip configuration light-emitting diodes (LEDs) using an Al-based reflector. Improved ohmic characteristics were found for the nanoroughened sample.
openaire   +1 more source