Results 261 to 270 of about 29,698,260 (294)

ICTS measurements for p-GaN Schottky contacts

Applied Surface Science, 2002
High-temperature isothermal capacitance transient spectroscopy (H-ICTS) measurements were conducted to characterize near mid-gap defects, which are the origin of the memory effect in Ni/p-GaN Schottky contacts. A large single peak was detected only under the forward bias conditions.
Kenji Shiojima, Suehiro Sugitani, Shiro Sakai   +2 more
openaire   +1 more source

Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p++-GaN/p-GaN/AlGaN/GaN platform

Applied Physics Letters
A record-low Ohmic contact resistance is obtained on p++-GaN/p-GaN/GaN/AlGaN/GaN epitaxial structure designed for GaN CMOS circuit. Ni/Ag/NiO (1/120/6 nm) after 500 °C/360 s annealing in air atmosphere demonstrates an ultralow contact resistance (1.67 Ω mm) and the lowest specific contact resistivity (6.48 × 10–7 Ω cm2) reported so far.
Zhiwei Sun, Tianyu Zhao, Maoqing Ling, Jingang Li, Hao Tian, Weisheng Wang, Yuanlei Zhang, Jie Zhang, Yinchao Zhao, Ivona Z. Mitrovic, Harm van Zalinge, Kain Lu Low, Sen Huang, Wen Liu   +13 more
openaire   +1 more source

Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain

IEEE Electron Device Letters, 2022
Ruize Sun, Pan Luo, Fangzhou Wang, Chao Liu, Wenjun Xu, Yang Wang, Guojian Ding, Haojun Yang, Qi Feng, Wanjun Chen, Bo Zhang   +10 more
openaire   +1 more source

A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films

Japanese Journal of Applied Physics
Abstract In this paper, we report a trigate fin-channel FET on very low-doped p-GaN films. While achieving a good source/drain ohmic contact mandates high p-GaN doping; a good Schottky gate interface, in contrast, demands low doping.
Fregolent, Manuel, Singh, Simranjit, Lu, Shun, Watanabe, Hirotaka, Wang, Jia, De Santi, Carlo, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo, Honda, Yoshio, Amano, Hiroshi, Sarkar, Biplab   +11 more
openaire   +2 more sources

Reverse Blocking HEMTs with Stepped P-GaN Drain

2021 International Conference on IC Design and Technology (ICICDT), 2021
Zhuocheng Wang, Ruize Sun
openaire   +1 more source

The Electronic Nature of metal/p-GaN Junctions

AIP Conference Proceedings, 2005
We have studied the microscopic electronic characteristics of Ni‐Au layers on Mg‐doped GaN, using electron beam induced current to measure the carrier separation associated with built‐in electric fields. Scanning electron microscopy reveals that the metal layer has a large density of Ni islands within a Au matrix.
openaire   +1 more source

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

IEEE Transactions on Electron Devices, 2022
Qianshu Wu, Jia Chen, Liang He, Jinwei Zhang, Qiuling Qiu, Chenliang Feng, Liuan Li, Taotao Que, Zhenxing Liu, Zhisheng Wu, Zhiyuan He, Yang Liu   +11 more
openaire   +1 more source

Generative Adversarial Networks (GANs)

ACM Computing Surveys, 2022
Jiannong Cao, Divya Saxena
exaly  

GAN Review: Models and Medical Image Fusion Applications

Information Fusion, 2023
Lu Huiling
exaly  

On Data Augmentation for GAN Training

IEEE Transactions on Image Processing, 2021
Ngoc-Trung Tran, Ngoc-Bao Nguyen, Ngai-Man   +2 more
exaly