Results 261 to 270 of about 18,647,368 (293)

Characterisation of defects in p-GaN by admittance spectroscopy

Physica B: Condensed Matter, 2012
Mg-doped GaN films have been grown on (0 0 0 1) sapphire using metal organic vapour phase epitaxy. Use of different buffer layer strategies caused the threading dislocation density (TDD) in the GaN to be either approximately 2×109 cm−2 or 1×1010 cm−2.
O.S. Elsherif, K.D. Vernon-Parry, J.H. Evans-Freeman, R.J. Airey, M. Kappers, C.J. Humphreys   +5 more
openaire   +1 more source

Sputtered Indium-Tin-Oxide on p-GaN

Journal of The Electrochemical Society, 2008
To study plasma-induced damages, we directly sputtered indium-tin-oxide (ITO) films onto p-GaN and systematically studied the effects of sputter power on the electrical properties of ITO/p-GaN. It was found that plasma bombardment during sputtering will induce nitrogen vacancies and compensate acceptor concentration in p-GaN or even convert p-GaN into ...
S. J. Chang, C. H. Lan, J. D. Hwang, Y. C. Cheng, W. J. Lin, J. C. Lin, H. Z. Chen   +6 more
openaire   +1 more source

Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain

IEEE Electron Device Letters, 2022
Ruize Sun, Pan Luo, Fangzhou Wang, Chao Liu, Wenjun Xu, Yang Wang, Guojian Ding, Haojun Yang, Qi Feng, Wanjun Chen, Bo Zhang   +10 more
openaire   +1 more source

Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p++-GaN/p-GaN/AlGaN/GaN platform

Applied Physics Letters
A record-low Ohmic contact resistance is obtained on p++-GaN/p-GaN/GaN/AlGaN/GaN epitaxial structure designed for GaN CMOS circuit. Ni/Ag/NiO (1/120/6 nm) after 500 °C/360 s annealing in air atmosphere demonstrates an ultralow contact resistance (1.67 Ω mm) and the lowest specific contact resistivity (6.48 × 10–7 Ω cm2) reported so far.
Zhiwei Sun, Tianyu Zhao, Maoqing Ling, Jingang Li, Hao Tian, Weisheng Wang, Yuanlei Zhang, Jie Zhang, Yinchao Zhao, Ivona Z. Mitrovic, Harm van Zalinge, Kain Lu Low, Sen Huang, Wen Liu   +13 more
openaire   +1 more source

A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films

Japanese Journal of Applied Physics
Abstract In this paper, we report a trigate fin-channel FET on very low-doped p-GaN films. While achieving a good source/drain ohmic contact mandates high p-GaN doping; a good Schottky gate interface, in contrast, demands low doping.
Fregolent, Manuel, Singh, Simranjit, Lu, Shun, Watanabe, Hirotaka, Wang, Jia, De Santi, Carlo, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo, Honda, Yoshio, Amano, Hiroshi, Sarkar, Biplab   +11 more
openaire   +2 more sources

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

IEEE Transactions on Electron Devices, 2022
Qianshu Wu, Jia Chen, Liang He, Jinwei Zhang, Qiuling Qiu, Chenliang Feng, Liuan Li, Taotao Que, Zhenxing Liu, Zhisheng Wu, Zhiyuan He, Yang Liu   +11 more
openaire   +1 more source

The Electronic Nature of metal/p-GaN Junctions

AIP Conference Proceedings, 2005
We have studied the microscopic electronic characteristics of Ni‐Au layers on Mg‐doped GaN, using electron beam induced current to measure the carrier separation associated with built‐in electric fields. Scanning electron microscopy reveals that the metal layer has a large density of Ni islands within a Au matrix.
openaire   +1 more source

Reverse Blocking HEMTs with Stepped P-GaN Drain

2021 International Conference on IC Design and Technology (ICICDT), 2021
Zhuocheng Wang, Ruize Sun
openaire   +1 more source

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Advanced Materials, 2021
Jianbo Liang, Yasuo Shimizu, Yutaka Ohno   +2 more
exaly  

Formation Mechanism and Bandgap Reduction of GaN–ZnO Solid‐Solution Thin Films Fabricated by Nanolamination of Atomic Layer Deposition

Advanced Materials, 2023
Ming-Wei Liao, Horng-Tay Jeng, Tsong-Pyng Perng   +2 more
exaly