Results 261 to 270 of about 80,998 (291)

High temperature instabilities of ohmic contacts on p‐GaN

physica status solidi c, 2008
AbstractThis paper describes an investigation of the instabilities of ohmic contacts on p‐type GaN submitted to long term high temperature stress. Transfer Length Method (TLM) was used to separately analyze the contribution of contact resistivity and sheet resistance on contact degradation. Before treatment, contacts showed linear behaviour, indicating
TREVISANELLO, LORENZO ROBERTO, MENEGHINI, MATTEO, ZEHNDER U, HAHN B, MENEGHESSO, GAUDENZIO, ZANONI, ENRICO   +5 more
openaire   +2 more sources

Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p++-GaN/p-GaN/AlGaN/GaN platform

Applied Physics Letters
A record-low Ohmic contact resistance is obtained on p++-GaN/p-GaN/GaN/AlGaN/GaN epitaxial structure designed for GaN CMOS circuit. Ni/Ag/NiO (1/120/6 nm) after 500 °C/360 s annealing in air atmosphere demonstrates an ultralow contact resistance (1.67 Ω mm) and the lowest specific contact resistivity (6.48 × 10–7 Ω cm2) reported so far.
Zhiwei Sun, Tianyu Zhao, Maoqing Ling, Jingang Li, Hao Tian, Weisheng Wang, Yuanlei Zhang, Jie Zhang, Yinchao Zhao, Ivona Z. Mitrovic, Harm van Zalinge, Kain Lu Low, Sen Huang, Wen Liu   +13 more
openaire   +1 more source

Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs

IEEE Transactions on Electron Devices, 2016
This paper reports on the behavior of Al/Ti/p-GaN interfaces as gate contacts for p-GaN/AlGaN/GaN normally off high electron mobility transistor (HEMTs), highlighting the impact of the thermal budget on the metal gate on the device characteristics. In fact, while the devices subjected to an annealing at 800 degrees C show a considerable high leakage ...
G Greco, F Iucolano, S Di Franco, C Bongiorno, A Patti, F Roccaforte   +5 more
openaire   +2 more sources

A Schottky gate p-GaN fin-channel field effect transistor on very low doped p-GaN films

Japanese Journal of Applied Physics
Abstract In this paper, we report a trigate fin-channel field effect transistor (FET) on very low doped p-GaN films. While achieving a good source/drain ohmic contact mandates a high p-GaN doping; a good Schottky gate interface contrarily demands a low doping.
Manuel Fregolent, Simranjit Singh, Shun LU, Hirotaka Watanabe, Jia Wang, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Yoshio Honda, Hiroshi Amano, Biplab Sarkar   +11 more
openaire   +1 more source

Large Schottky barriers for Ni/p-GaN contacts

Applied Physics Letters, 1999
Large Schottky barriers were measured for Ni contacts formed on low Mg-doped p-GaN. In order to improve leaky Schottky characteristics, low-Mg doping was examined. This provided atomically flat surfaces and a low dislocation density of 5.5×108 cm−2. The Schottky barrier height (qφB) as high as 2.4±0.2 eV and n values of 1.84±0.06 were obtained from ...
Kenji Shiojima, Tomoya Sugahara, Shiro Sakai   +2 more
openaire   +1 more source

Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain

IEEE Electron Device Letters, 2022
Ruize Sun, Pan Luo, Fangzhou Wang, Chao Liu, Wenjun Xu, Yang Wang, Guojian Ding, Haojun Yang, Qi Feng, Wanjun Chen, Bo Zhang   +10 more
openaire   +1 more source

Low applied bias for p-GaN electroluminescent devices

Microelectronic Engineering, 2005
Nickel ohmic contacts and Schottky contacts using silver or titanium were fabricated on Mg-doped p-GaN films. The light emission has been obtained from these thin film electroluminescent devices (ELDs). These ELDs were operated under direct current (DC) bias.
F.K. Yam, Z. Hassan, C.K. Tan, C.W. Lim, A. Abdul Aziz   +4 more
openaire   +1 more source

High-performance Reverse Blocking p-GaN HEMTs with Multi-column p-GaN/Schottky Alternate-island Drain

2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022
Ruize Sun, Fangzhou Wang, Pan Luo, Wenjun Xu, Yang Wang, Chao Liu, Wanjun Chen, Bo Zhang   +7 more
openaire   +1 more source

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

IEEE Transactions on Electron Devices, 2022
Qianshu Wu, Jia Chen, Liang He, Jinwei Zhang, Qiuling Qiu, Chenliang Feng, Liuan Li, Taotao Que, Zhenxing Liu, Zhisheng Wu, Zhiyuan He, Yang Liu   +11 more
openaire   +1 more source

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Advanced Materials, 2021
Jianbo Liang, Yasuo Shimizu, Yutaka Ohno
exaly