Results 251 to 260 of about 18,647,368 (293)

Electrical Transport Properties of p-GaN

Japanese Journal of Applied Physics, 1996
Electrical transport properties of Mg-doped p-GaN grown by organometallic vapor phase epitaxy were studied between 100 and 700 K. Calculations using Fermi-Dirac statistigs were carried out, identifying the majority carrier to be holes over the whole temperature range considered. The acceptor level is 0.17 ± 0.01 eV.
Hisashi Nakayama, Peter Hacke, Mohammad Rezaul Huque Khan, Theeradetch Detchprohm, Kazumasa Hiramatsu Kazumasa Hiramatsu, Nobuhiko Sawaki Nobuhiko Sawaki   +5 more
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Neutron irradiation effects in p-GaN

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006
Electrical properties, admittance, and microcathodoluminescence spectra are compared for p-GaN samples grown by hydride vapor phase epitaxy (HVPE) and by molecular beam epitaxy (MBE). The former are characterized by a high 300K hole concentration and a weak temperature dependence of conductivity.
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, K. D. Shcherbatchev, V. T. Bublik, M. I. Voronova, S. J. Pearton, A. Dabiran, A. V. Osinsky   +12 more
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Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN

Applied Physics Letters, 2020
This work demonstrates a lateral p-n junction diode formed between the two-dimensional electron gas (2DEG) and the selective-area regrown p-GaN in AlGaN/GaN. Benefiting from the in-plane 2DEG channel, this p-GaN/2DEG diode can directly characterize the current conduction and voltage blocking characteristics of the regrown sidewall p-n junction, which ...
Ming Xiao, Zhonghao Du, Jinqiao Xie, Edward Beam, Xiaodong Yan, Kai Cheng, Han Wang, Yu Cao, Yuhao Zhang   +8 more
openaire   +1 more source

Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs

IEEE Transactions on Electron Devices, 2016
This paper reports on the behavior of Al/Ti/p-GaN interfaces as gate contacts for p-GaN/AlGaN/GaN normally off high electron mobility transistor (HEMTs), highlighting the impact of the thermal budget on the metal gate on the device characteristics. In fact, while the devices subjected to an annealing at 800 degrees C show a considerable high leakage ...
G Greco, F Iucolano, S Di Franco, C Bongiorno, A Patti, F Roccaforte   +5 more
openaire   +2 more sources

High temperature instabilities of ohmic contacts on p‐GaN

physica status solidi c, 2008
AbstractThis paper describes an investigation of the instabilities of ohmic contacts on p‐type GaN submitted to long term high temperature stress. Transfer Length Method (TLM) was used to separately analyze the contribution of contact resistivity and sheet resistance on contact degradation. Before treatment, contacts showed linear behaviour, indicating
TREVISANELLO, LORENZO ROBERTO, MENEGHINI, MATTEO, ZEHNDER U, HAHN B, MENEGHESSO, GAUDENZIO, ZANONI, ENRICO   +5 more
openaire   +2 more sources

A Study on Ohmic Contact to Dry-Etched p-GaN

IEICE Transactions on Electronics, 2008
Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl4/Cl2-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN.
Cheng-Yu Hu, Jin-Ping Ao, Masaya Okada, Yasuo Ohno   +3 more
openaire   +1 more source

p-GaN Activation by Electrochemical Potentiostatic Method

Electrochemical and Solid-State Letters, 2010
An electrochemical potentiostatic activation method was examined to enhance the hole concentration of p-type GaN epitaxial layer. The hole concentration was more than double, with a mobility of after an electric voltage was applied. At an optimal applied voltage of 3 V, the hole concentration was enhanced about 2.4 times from to .
Hak Hyung Lee, Gi Cheol Hong, Bong Jun Kim, Karthikeyan Giri Sadasivam, June Key Lee, Sang-Wan Ryu, Sung Jin Son, Kwang-Woo Kwon, Young-Ho Kim   +8 more
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ICTS measurements for p-GaN Schottky contacts

Applied Surface Science, 2002
High-temperature isothermal capacitance transient spectroscopy (H-ICTS) measurements were conducted to characterize near mid-gap defects, which are the origin of the memory effect in Ni/p-GaN Schottky contacts. A large single peak was detected only under the forward bias conditions.
Kenji Shiojima, Suehiro Sugitani, Shiro Sakai   +2 more
openaire   +1 more source

ZnO Nanowire/p-GaN Heterojunction LEDs

MRS Proceedings, 2007
AbstractThis article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse
Heiko O. Jacobs, Jesse Cole, Amir M. Dabiran, Heiko O. Jacobs   +3 more
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p- GaN surface treatments for metal contacts

Applied Physics Letters, 2000
The chemical bonding and electronic properties of wet, chemically treated p-GaN surfaces were studied using synchrotron radiation photoemission spectroscopy. Chlorine-based chemical bonding was identified on the conventional HCl-treated p-GaN surface, which is associated with a shift of the surface Fermi level toward the conduction band edge by ∼0.9 eV
Jingxi Sun, K. A. Rickert, J. M. Redwing, A. B. Ellis, F. J. Himpsel, T. F. Kuech   +5 more
openaire   +1 more source