Results 251 to 260 of about 80,998 (291)

Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN

Applied Physics Letters, 2020
This work demonstrates a lateral p-n junction diode formed between the two-dimensional electron gas (2DEG) and the selective-area regrown p-GaN in AlGaN/GaN. Benefiting from the in-plane 2DEG channel, this p-GaN/2DEG diode can directly characterize the current conduction and voltage blocking characteristics of the regrown sidewall p-n junction, which ...
Ming Xiao, Zhonghao Du, Jinqiao Xie, Edward Beam, Xiaodong Yan, Kai Cheng, Han Wang, Yu Cao, Yuhao Zhang   +8 more
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p‐GaN Selective Nitridation to Obtain a Normally Off p‐GaN Gate AlGaN/GaN High‐Electron‐Mobility Transistors

physica status solidi (RRL) – Rapid Research Letters, 2023
In this article, a method of nitrogen plasma treatment is proposed to achieve normally off p‐GaN/AlGaN/GaN high‐electron‐mobility transistors, and the related mechanism is proposed. A nitrogen plasma treatment is employed to deplete holes in the p‐GaN layer to change the surface characteristics.
Shaoqian Lu, Guohao Yu, Yingfei Sun, Xu Yuan, Zhongkai Du, Bingliang Zhang, Lu Wang, Yu Li, Dongdong Wu, Zengli Huang, Zhongming Zeng, Xulei Qin, Baoshun Zhang   +12 more
openaire   +1 more source

Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p ++ -GaN layer

Journal of Crystal Growth, 2017
Growth conditions are used to control the residual carbon impurity incorporation in p++-GaN layers. Specific contact resistance (ρc) with various residual carbon concentrations has been investigated through the circular transmission line model (CTLM) method and secondary ion mass spectroscopy (SIMS) analysis.
Feng Liang, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Wei Liu, Xiang Li, Shuangtao Liu, Yao Xing, Liqun Zhang, Hui Yang, Heng Long, Mo Li   +14 more
openaire   +1 more source

Al contacts to nanoroughened p-GaN

Microelectronics Journal, 2009
Nanoroughening of a p-GaN surface using nanoscale Ni islands as an etch mask was utilized to investigate the feasibility for the flip-chip configuration light-emitting diodes (LEDs) using an Al-based reflector. Improved ohmic characteristics were found for the nanoroughened sample.
openaire   +1 more source

p- GaN surface treatments for metal contacts

Applied Physics Letters, 2000
The chemical bonding and electronic properties of wet, chemically treated p-GaN surfaces were studied using synchrotron radiation photoemission spectroscopy. Chlorine-based chemical bonding was identified on the conventional HCl-treated p-GaN surface, which is associated with a shift of the surface Fermi level toward the conduction band edge by ∼0.9 eV
Jingxi Sun, K. A. Rickert, J. M. Redwing, A. B. Ellis, F. J. Himpsel, T. F. Kuech   +5 more
openaire   +1 more source

p-GaN Activation by Electrochemical Potentiostatic Method

Electrochemical and Solid-State Letters, 2010
An electrochemical potentiostatic activation method was examined to enhance the hole concentration of p-type GaN epitaxial layer. The hole concentration was more than double, with a mobility of after an electric voltage was applied. At an optimal applied voltage of 3 V, the hole concentration was enhanced about 2.4 times from to .
Hak Hyung Lee, Gi Cheol Hong, Bong Jun Kim, Karthikeyan Giri Sadasivam, June Key Lee, Sang-Wan Ryu, Sung Jin Son, Kwang-Woo Kwon, Young-Ho Kim   +8 more
openaire   +1 more source

Sputtered Indium-Tin-Oxide on p-GaN

Journal of The Electrochemical Society, 2008
To study plasma-induced damages, we directly sputtered indium-tin-oxide (ITO) films onto p-GaN and systematically studied the effects of sputter power on the electrical properties of ITO/p-GaN. It was found that plasma bombardment during sputtering will induce nitrogen vacancies and compensate acceptor concentration in p-GaN or even convert p-GaN into ...
S. J. Chang, C. H. Lan, J. D. Hwang, Y. C. Cheng, W. J. Lin, J. C. Lin, H. Z. Chen   +6 more
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ICTS measurements for p-GaN Schottky contacts

Applied Surface Science, 2002
High-temperature isothermal capacitance transient spectroscopy (H-ICTS) measurements were conducted to characterize near mid-gap defects, which are the origin of the memory effect in Ni/p-GaN Schottky contacts. A large single peak was detected only under the forward bias conditions.
Kenji Shiojima, Suehiro Sugitani, Shiro Sakai   +2 more
openaire   +1 more source

p-GaN/AlGaN/GaN Enhancement-Mode HEMTs

2006 64th Device Research Conference, 2006
GaN-based enhancement-mode (E-mode) HEMTs are attracting significant interest for integration of control circuitry and for the added safety of a normally-off device in power switching applications. While previous work reports excellent performance by gate-recessing1 and Fluorine-based plasma treatment2, the Schottky gate turn-on voltage of these ...
C. S. SHU, CHINI, Alessandro, Y. FU, C. POBLENZ, J. S. SPECK, U. K. MISHRA   +5 more
openaire   +1 more source

The effect of a surface layer capping p-InGaN/p-GaN superlattices on the contact to p-GaN

Superlattices and Microstructures, 2008
863 High Technology Research and Development of China [2004AA311020, 2006AA03Z409]; National Science Fund of China [60276029]; Science and Technology of Fujian Province [2005HZ1018, 2006H0092]
Yin, Y., Liu, B. L., Zhang, B. P., Lin, G. X.   +3 more
openaire   +2 more sources