Results 251 to 260 of about 29,698,260 (294)
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Al contacts to nanoroughened p-GaN
Microelectronics Journal, 2009Nanoroughening of a p-GaN surface using nanoscale Ni islands as an etch mask was utilized to investigate the feasibility for the flip-chip configuration light-emitting diodes (LEDs) using an Al-based reflector. Improved ohmic characteristics were found for the nanoroughened sample.
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Post-growth enhancement pf p-GaN conductivity
The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004., 2004The paper reports on the investigation an improvement of the p-type conductivity of Mg-doped GaN by creating Ga-vacancies in the lattice.
Karouta, F. +3 more
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Electrical Transport Properties of p-GaN
Japanese Journal of Applied Physics, 1996Electrical transport properties of Mg-doped p-GaN grown by organometallic vapor phase epitaxy were studied between 100 and 700 K. Calculations using Fermi-Dirac statistigs were carried out, identifying the majority carrier to be holes over the whole temperature range considered. The acceptor level is 0.17 ± 0.01 eV.
Hisashi Nakayama +5 more
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Neutron irradiation effects in p-GaN
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006Electrical properties, admittance, and microcathodoluminescence spectra are compared for p-GaN samples grown by hydride vapor phase epitaxy (HVPE) and by molecular beam epitaxy (MBE). The former are characterized by a high 300K hole concentration and a weak temperature dependence of conductivity.
A. Y. Polyakov +12 more
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Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN
Applied Physics Letters, 2020This work demonstrates a lateral p-n junction diode formed between the two-dimensional electron gas (2DEG) and the selective-area regrown p-GaN in AlGaN/GaN. Benefiting from the in-plane 2DEG channel, this p-GaN/2DEG diode can directly characterize the current conduction and voltage blocking characteristics of the regrown sidewall p-n junction, which ...
Ming Xiao +8 more
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IEEE Transactions on Electron Devices, 2016
This paper reports on the behavior of Al/Ti/p-GaN interfaces as gate contacts for p-GaN/AlGaN/GaN normally off high electron mobility transistor (HEMTs), highlighting the impact of the thermal budget on the metal gate on the device characteristics. In fact, while the devices subjected to an annealing at 800 degrees C show a considerable high leakage ...
G Greco +5 more
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This paper reports on the behavior of Al/Ti/p-GaN interfaces as gate contacts for p-GaN/AlGaN/GaN normally off high electron mobility transistor (HEMTs), highlighting the impact of the thermal budget on the metal gate on the device characteristics. In fact, while the devices subjected to an annealing at 800 degrees C show a considerable high leakage ...
G Greco +5 more
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High temperature instabilities of ohmic contacts on p‐GaN
physica status solidi c, 2008AbstractThis paper describes an investigation of the instabilities of ohmic contacts on p‐type GaN submitted to long term high temperature stress. Transfer Length Method (TLM) was used to separately analyze the contribution of contact resistivity and sheet resistance on contact degradation. Before treatment, contacts showed linear behaviour, indicating
TREVISANELLO, LORENZO ROBERTO +5 more
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A Study on Ohmic Contact to Dry-Etched p-GaN
IEICE Transactions on Electronics, 2008Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl4/Cl2-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN.
Cheng-Yu Hu +3 more
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p-GaN Activation by Electrochemical Potentiostatic Method
Electrochemical and Solid-State Letters, 2010An electrochemical potentiostatic activation method was examined to enhance the hole concentration of p-type GaN epitaxial layer. The hole concentration was more than double, with a mobility of after an electric voltage was applied. At an optimal applied voltage of 3 V, the hole concentration was enhanced about 2.4 times from to .
Hak Hyung Lee +8 more
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ZnO Nanowire/p-GaN Heterojunction LEDs
MRS Proceedings, 2007AbstractThis article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse
Heiko O. Jacobs +3 more
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