Results 241 to 250 of about 80,998 (291)

P-GaN∕ZnO nanorod heterojunction LEDs—effect of carrier concentration in p-GaN

AIP Conference Proceedings, 2011
We studied the effect of carrier concentration in p‐GaN substrate on the performance of p‐GaN/n‐ZnO nanorod heterojunction LEDs. ZnO nanorods were electrodeposited on commercial p‐GaN wafers in a two electrode system from aqueous solutions of zinc nitrate and hexamethylenetetramine.
A. M. C. Ng, X. Y. Chen, F. Fang, A. B. Djurišić, W. K. Chan, K. W. Cheah, Jisoon Ihm, Hyeonsik Cheong   +7 more
openaire   +2 more sources

High-performance reverse blocking p-GaN HEMTs with recessed Schottky and p-GaN isolation blocks drain

Applied Physics Letters, 2021
In this Letter, the p-GaN high electron mobility transistor (HEMT) with hybrid drain of recessed Schottky (RS) and p-GaN isolation blocks' drain (HSP drain) is proposed and fabricated for good reverse blocking capability. The related operation mechanism has been investigated and revealed.
Haiyong Wang, Wei Mao, Shenglei Zhao, Beiluan Gao, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao   +9 more
openaire   +1 more source

Plasma damage in p-GaN

Journal of Electronic Materials, 2000
The effect of Inductively Coupled Plasma H2 or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400–550 A.
Cao, X. A., Dang, G. T., Hickman, R. A., Pearton, S. J., Ren, F., Shul, R. J., Van Hove, J. M., Zhang, A. P., Zhang, L.   +8 more
openaire   +1 more source

Schottky Barriers on p-GaN

MRS Proceedings, 1995
ABSTRACTSchottky barriers were formed on p-GaN. p-GaN layers doped with Mg were grown by metalorganic chemical vapor deposition (MOCVD). 6H-SiC wafers were used as substrates. The barriers were made by vacuum thermal evaporation of Au. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the barriers were investigated.
N.I. Kuznetsov, E.V. Kalinina, V.A. Soloviev, V.A. Dmitriev   +3 more
openaire   +1 more source

Si diffusion in p-GaN

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2004
The characteristics of p-type Mg-doped GaN films diffused with Si are studied. N-type conductivity is achieved, and the carrier mobility of diffused GaN is 90–150 cm2 V−1 s−1, higher than that of p-GaN but less than that of epitaxially grown n-GaN. The Mg acceptor states could become deep compensating defects, and the compensation ratio NA/ND is 0.3, 0.
C. J. Pan, G. C. Chi, B. J. Pong, J. K. Sheu, J. Y. Chen   +4 more
openaire   +1 more source

Post-growth enhancement pf p-GaN conductivity

The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004., 2004
The paper reports on the investigation an improvement of the p-type conductivity of Mg-doped GaN by creating Ga-vacancies in the lattice.
Karouta, F., Kappers, M.J., Krämer, M.C.J.C.M., Jacobs, B.   +3 more
openaire   +2 more sources

Ohmic contacts on p-GaN (Part I):

Materials Science in Semiconductor Processing, 2001
Abstract The changes in contact resistivity and I–V curve linearity after annealing of Pd, Ni/Au, Cr/Au, Co/Au, Pt and Au contacts on p-GaN after tempering below and above 500°C have been investigated. CTLM-layered structures on p-GaN were thermally stressed and electrically analyzed.
Roland Wenzel, Gerhard G Fischer, Rainer Schmid-Fetzer   +2 more
openaire   +1 more source

Electrical Transport Properties of p-GaN

Japanese Journal of Applied Physics, 1996
Electrical transport properties of Mg-doped p-GaN grown by organometallic vapor phase epitaxy were studied between 100 and 700 K. Calculations using Fermi-Dirac statistigs were carried out, identifying the majority carrier to be holes over the whole temperature range considered. The acceptor level is 0.17 ± 0.01 eV.
Hisashi Nakayama, Peter Hacke, Mohammad Rezaul Huque Khan, Theeradetch Detchprohm, Kazumasa Hiramatsu Kazumasa Hiramatsu, Nobuhiko Sawaki Nobuhiko Sawaki   +5 more
openaire   +1 more source

ZnO Nanowire/p-GaN Heterojunction LEDs

MRS Proceedings, 2007
AbstractThis article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse
Heiko O. Jacobs, Jesse Cole, Amir M. Dabiran, Heiko O. Jacobs   +3 more
openaire   +1 more source

Neutron irradiation effects in p-GaN

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006
Electrical properties, admittance, and microcathodoluminescence spectra are compared for p-GaN samples grown by hydride vapor phase epitaxy (HVPE) and by molecular beam epitaxy (MBE). The former are characterized by a high 300K hole concentration and a weak temperature dependence of conductivity.
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, K. D. Shcherbatchev, V. T. Bublik, M. I. Voronova, S. J. Pearton, A. Dabiran, A. V. Osinsky   +12 more
openaire   +1 more source