Results 241 to 250 of about 29,698,260 (294)

The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT

Semiconductor Science and Technology, 2022
Abstract In this paper, the influence of a lightly doped p-GaN (p − -GaN) cap layer on p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) (LDP-HEMTs) was investigated.
Kai Liu, Runhao Wang, Chong Wang, Xuefeng Zheng, Xiaohua Ma, Junchun Bai, Bin Cheng, Ruiyu Liu, Ang Li, Yaopeng Zhao, Yue Hao   +10 more
openaire   +1 more source

Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain

Superlattices and Microstructures, 2021
Abstract A normally-off reverse blocking high electron mobility transistor (HEMT) with p-GaN gate and hybrid p-GaN ohmic drain (p-GaN RB-HEMT) has been fabricated and investigated to achieve reverse blocking capability. Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the proposed device features that a p-GaN layer is ...
Haiyong Wang, Wei Mao, Shenglei Zhao, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao   +9 more
openaire   +1 more source

P-GaN∕ZnO nanorod heterojunction LEDs—effect of carrier concentration in p-GaN

AIP Conference Proceedings, 2011
We studied the effect of carrier concentration in p‐GaN substrate on the performance of p‐GaN/n‐ZnO nanorod heterojunction LEDs. ZnO nanorods were electrodeposited on commercial p‐GaN wafers in a two electrode system from aqueous solutions of zinc nitrate and hexamethylenetetramine.
A. M. C. Ng, X. Y. Chen, F. Fang, A. B. Djurišić, W. K. Chan, K. W. Cheah, Jisoon Ihm, Hyeonsik Cheong   +7 more
openaire   +2 more sources

Si diffusion in p-GaN

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2004
The characteristics of p-type Mg-doped GaN films diffused with Si are studied. N-type conductivity is achieved, and the carrier mobility of diffused GaN is 90–150 cm2 V−1 s−1, higher than that of p-GaN but less than that of epitaxially grown n-GaN. The Mg acceptor states could become deep compensating defects, and the compensation ratio NA/ND is 0.3, 0.
C. J. Pan, G. C. Chi, B. J. Pong, J. K. Sheu, J. Y. Chen   +4 more
openaire   +1 more source

Schottky Barriers on p-GaN

MRS Proceedings, 1995
ABSTRACTSchottky barriers were formed on p-GaN. p-GaN layers doped with Mg were grown by metalorganic chemical vapor deposition (MOCVD). 6H-SiC wafers were used as substrates. The barriers were made by vacuum thermal evaporation of Au. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the barriers were investigated.
N.I. Kuznetsov, E.V. Kalinina, V.A. Soloviev, V.A. Dmitriev   +3 more
openaire   +1 more source

Plasma damage in p-GaN

Journal of Electronic Materials, 2000
The effect of Inductively Coupled Plasma H2 or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400–550 A.
Cao, X. A., Dang, G. T., Hickman, R. A., Pearton, S. J., Ren, F., Shul, R. J., Van Hove, J. M., Zhang, A. P., Zhang, L.   +8 more
openaire   +1 more source

High-performance reverse blocking p-GaN HEMTs with recessed Schottky and p-GaN isolation blocks drain

Applied Physics Letters, 2021
In this Letter, the p-GaN high electron mobility transistor (HEMT) with hybrid drain of recessed Schottky (RS) and p-GaN isolation blocks' drain (HSP drain) is proposed and fabricated for good reverse blocking capability. The related operation mechanism has been investigated and revealed.
Haiyong Wang, Wei Mao, Shenglei Zhao, Beiluan Gao, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao   +9 more
openaire   +1 more source

The effect of a surface layer capping p-InGaN/p-GaN superlattices on the contact to p-GaN

Superlattices and Microstructures, 2008
863 High Technology Research and Development of China [2004AA311020, 2006AA03Z409]; National Science Fund of China [60276029]; Science and Technology of Fujian Province [2005HZ1018, 2006H0092]
Yin, Y., Liu, B. L., Zhang, B. P., Lin, G. X.   +3 more
openaire   +2 more sources

Ohmic contacts on p-GaN (Part I):

Materials Science in Semiconductor Processing, 2001
Abstract The changes in contact resistivity and I–V curve linearity after annealing of Pd, Ni/Au, Cr/Au, Co/Au, Pt and Au contacts on p-GaN after tempering below and above 500°C have been investigated. CTLM-layered structures on p-GaN were thermally stressed and electrically analyzed.
Roland Wenzel, Gerhard G Fischer, Rainer Schmid-Fetzer   +2 more
openaire   +1 more source

Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p ++ -GaN layer

Journal of Crystal Growth, 2017
Growth conditions are used to control the residual carbon impurity incorporation in p++-GaN layers. Specific contact resistance (ρc) with various residual carbon concentrations has been investigated through the circular transmission line model (CTLM) method and secondary ion mass spectroscopy (SIMS) analysis.
Feng Liang, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Wei Liu, Xiang Li, Shuangtao Liu, Yao Xing, Liqun Zhang, Hui Yang, Heng Long, Mo Li   +14 more
openaire   +1 more source