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Recessed p-GaN Gate MIS-HEMT with AlN Interlayer and Buried p-GaN Layer
SemiconductorsP. S. Sreelekshmi, Jobymol Jacob
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GaN in different dimensionalities: Properties, synthesis, and applications
Materials Science and Engineering Reports, 2019Jianping Liu, Liu Jx, Lei Fu
exaly
Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si
Advanced Materials, 2017Shadi Dayeh, Renjie Chen, Woojin Choi
exaly
Methods to achieve Ohmic contact to p-GaN
International Conference on Optoelectronic Materials and Devices (ICOMD 2021), 2022openaire +1 more source
Fabrication and performance of GaN electronic devices
Materials Science and Engineering Reports, 2000Fan Ren, A P Zhang, K P Lee
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Review of technology for normally-off HEMTs with p-GaN gate
Materials Science in Semiconductor Processing, 2018Fabrizio Roccaforte +2 more
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