Results 231 to 240 of about 73,947 (261)

A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films

Japanese Journal of Applied Physics
Abstract In this paper, we report a trigate fin-channel FET on very low-doped p-GaN films. While achieving a good source/drain ohmic contact mandates high p-GaN doping; a good Schottky gate interface, in contrast, demands low doping.
Fregolent, Manuel, Singh, Simranjit, Lu, Shun, Watanabe, Hirotaka, Wang, Jia, De Santi, Carlo, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo, Honda, Yoshio, Amano, Hiroshi, Sarkar, Biplab   +11 more
openaire   +2 more sources

Reverse Blocking HEMTs with Stepped P-GaN Drain

2021 International Conference on IC Design and Technology (ICICDT), 2021
Zhuocheng Wang, Ruize Sun
openaire   +1 more source

The Electronic Nature of metal/p-GaN Junctions

AIP Conference Proceedings, 2005
We have studied the microscopic electronic characteristics of Ni‐Au layers on Mg‐doped GaN, using electron beam induced current to measure the carrier separation associated with built‐in electric fields. Scanning electron microscopy reveals that the metal layer has a large density of Ni islands within a Au matrix.
openaire   +1 more source

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

IEEE Transactions on Electron Devices, 2022
Qianshu Wu, Jia Chen, Liang He, Jinwei Zhang, Qiuling Qiu, Chenliang Feng, Liuan Li, Taotao Que, Zhenxing Liu, Zhisheng Wu, Zhiyuan He, Yang Liu   +11 more
openaire   +1 more source

GAN review: Models and medical image fusion applications

Information Fusion, 2023
Lu Huiling
exaly  

Formation Mechanism and Bandgap Reduction of GaN–ZnO Solid‐Solution Thin Films Fabricated by Nanolamination of Atomic Layer Deposition

Advanced Materials, 2023
Tsong-Pyng Perng, Horng-Tay Jeng, Ming-Wei Liao   +2 more
exaly  

A review on the GaN-on-Si power electronic devices

Fundamental Research, 2022
Xuelin Yang, Qian Sun, Zhong Yaozong
exaly  

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Advanced Materials, 2021
Jianbo Liang, Naoteru Shigekawa, Yasuyoshi Nagai   +2 more
exaly  

High-performance Reverse Blocking p-GaN HEMTs with Multi-column p-GaN/Schottky Alternate-island Drain

2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022
Ruize Sun, Fangzhou Wang, Pan Luo, Wenjun Xu, Yang Wang, Chao Liu, Wanjun Chen, Bo Zhang   +7 more
openaire   +1 more source

Adsorption of CO, NH3, NO, and NO2 on pristine and defective g-GaN: Improved gas sensing and functionalization

Applied Surface Science, 2020
Jiangshan Zheng, Enling Li, Zhen Cui
exaly