Results 41 to 50 of about 46,362 (283)
Screen‐Printed Flexible Piezoelectric Force Sensor Array with Electromagnetic Interference Shielding
This article introduces a flexible screen‐printed piezoelectric sensor array designed for low‐frequency healthcare applications such as tactile sensing and cardiovascular monitoring. The device integrates interface electronics enabling the simultaneous acquisition of up to 128 signals, along with flexible EMI shielding that significantly reduces noise ...
Joseph Faudou +6 more
wiley +1 more source
A Transformer Design for High-Voltage Application Using LLC Resonant Converter
The inductor–inductor–capacitor (LLC) resonant converter is a suitable topology for wide output voltage and load range applications with limited circuit parameters.
Umut Ondin, Abdulkadir Balikci
doaj +1 more source
Novel ferrocene derivatives (e.g., FcPhc2) are used as an ultrathin layer hole‐blocking layer, reducing hole injection from the Ag contact. This results in an ultralow noise spectral density of 1.2 × 10−14 A Hz−1/2, and a high specific detectivity of 8.1 × 1012 Jones at −0.5 V.
Eunyoung Hong +16 more
wiley +1 more source
This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and
Constandinou, TG +4 more
core +1 more source
This work demonstrates the successful integration of a phenanthroline‐based 2D COF with MnI catalytic sites into a catholyte‐free membrane‐electrode‐assembly cell for CO2 electroreduction. The crystalline COF actively suppresses Mn⁰–Mn⁰ dimerization, achieving a turnover frequency of 617 h⁻¹ at 2.8 V (full‐cell potential), and enabling stable operation.
Laura Spies +8 more
wiley +1 more source
This study proposes a novel method to compensate phase shift angle of dual active bridge (DAB) converters by considering the parasitic capacitance of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs).
Jae-Sub Ko +3 more
doaj +1 more source
First self‐resonant frequency of power inductors based on approximated corrected stray capacitances
Inductive devices are extensively employed in power electronic systems due to their magnetic energy storage and power transfer capabilities. The current trend is towards increasing the frequency of operation in order to reduce the size of the magnetic ...
Ignacio Lope +2 more
doaj +1 more source
Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply ...
Alam, Muhammad A. +10 more
core +1 more source
Physical and electrical bandwidths of integrated photodiodes in standard CMOS technology [PDF]
The influence of different geometries (layouts) and structures of high-speed photodiodes in fully standard 0.18 μm CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed.
Annema, Anne Johan +2 more
core +3 more sources
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco +8 more
wiley +1 more source

