Results 51 to 60 of about 45,985 (302)

Parasitic consideration for differential capacitive sensor

Bulletin of Electrical Engineering and Informatics, 2019
Parasitic integration for a single supply differential capacitive sensing technique is presented in this paper. In real capacitive sensor measurement, parasitic impedance exists in its measurement. This paper objective is to study the effect of capacitive and resistive parasitic to the capacitive sensor circuit.
Nurul Arfah Che Mustapha, A. H. M. Zahirul Alam, Sheroz Khan, Amelia Wong Azman   +3 more
openaire   +2 more sources

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

First self‐resonant frequency of power inductors based on approximated corrected stray capacitances

IET Power Electronics, 2021
Inductive devices are extensively employed in power electronic systems due to their magnetic energy storage and power transfer capabilities. The current trend is towards increasing the frequency of operation in order to reduce the size of the magnetic ...
Ignacio Lope, Claudio Carretero, Jesus Acero   +2 more
doaj   +1 more source

Interfacial and Crystallographic Regulation of Zinc Anode via Electric Double Layer Reconstruction for Highly Stable Zn Anode

Advanced Functional Materials, EarlyView.
Trace amounts of perfluoro‐1‐butanesulfonyl fluoride enables the regulation of the Zn/electrolyte interface by the generated zincophilic ─SO3H groups with long hydrophobic ─CF2 tails, which adsorb strongly onto the Zn surface, displace water molecules from the inner Helmholtz plane, and reconstruct the electrical double‐layer structure.
Dinesh Patel, Yimei Chen, Ashwini Kumar Sharma, Xiaolei Wang   +3 more
wiley   +1 more source

Study on Total Ionizing Dose Effect of Three-dimensional Microsystem Interconnection Structure Based on Through-silicon Via

Yuanzineng kexue jishu
With the development of Moore’s law, through-silicon via (TSV) has emerged as a critical technology for the realization of three-dimensional (3-D) integrated microsystem.
WANG Hao1, 2, , CHEN Rui1, 2, , CHEN Qian1, HAN Jianwei1, 2, YU Xin3, MENG Dechao4, YANG Jiapeng5, XUE Yuxiong6, ZHOU Quanfeng4, HAN Ruilong1, 2
doaj   +1 more source

Performance Evaluation Of Single Phase Transformerless Inverter For Grid Photovoltaic (PV) Application

International Journal of Electrical Engineering and Applied Sciences, 2021
This paper present the evaluation performance of single-phase grid connected transformerless inverter according to the level of leakage ground current.
JUNAIDI BIDIN, MASDIANA ISKANDAR, ROYMEY @ ISMAIL YUSOF, MOHD ZULKIFLI AB. RAHMAN, MAASPALIZA AZRI   +4 more
doaj  

Implementation of low-loss superinductances for quantum circuits

, 2012
The simultaneous suppression of charge fluctuations and offsets is crucial for preserving quantum coherence in devices exploiting large quantum fluctuations of the superconducting phase. This requires an environment with both extremely low DC and high RF
Archana Kamal, Ioan M. Pop, M. T. Bell, Michel H. Devoret, Nicholas A. Masluk, Zlatko K. Minev   +5 more
core   +1 more source

Correlated double sampling integrator insensitiveto parasitic capacitance

Electronics Letters, 2001
A new correlated double sampling (CDS) scheme is proposed which improves the operation of an integrator with a large parasitic capacitor at the input node of an op-amp. It suppresses the effects of the 1/f noise and offset voltage of the op-amp, as well as the kTC charge noise from the parasitic capacitor.
T. Kajita, G.C. Temes, U.-K. Moon
openaire   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

Design of Interleaved Winding for Multilayer Planar Inductor and Its Application in Reducing Current Ringing of LLC Resonant Converter

Energies
To enhance the power density of LLC resonant converters, multilayer planar inductors are required. However, multilayer planar inductors have high parasitic capacitance, which may cause inductor current ringing in LLC resonant converters, leading to EMI ...
Qichen Liu, Zhengquan Zhang
doaj   +1 more source