Results 211 to 220 of about 25,904 (258)

Semiconductor ⇄ metal phase transitions

Journal of Solid State Chemistry, 1970
Abstract Existing experimental data pertaining to the semiconductor ⇄ metal phase transitions found in some of the lower oxides of Ti and V are collated and summarized and the theoretical implications of the insulating ground states of these and other solid compounds of transition elements (e.g., NiO) discussed. In particular, the effect of dynamical
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Propagation of the phase transition waves in plasma of semiconductors and metals

25th Anniversary, IEEE Conference Record - Abstracts. 1998 IEEE International Conference on Plasma Science (Cat. No.98CH36221), 1998
Summary form only given. The influence of high-power electric and magnetic field on condensed conducting metal may cause the following phase transitions: 1) melting and (or) evaporation as at laser breakdown of solid and liquid low-resistance semiconductors as in wire electric explosion; 2) semiconductor-metal phase transition of high-resistance ...
N.I. Kushkova, S.I. Tkachenko
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Phase transition and metallization of semiconductor GeSe at high pressure

Journal of Physics: Condensed Matter
Abstract Over the past few decades, semiconductor materials of the group IV–VI monochalcogenides have attracted considerable interest from researchers due to their rich structural characteristics and excellent physical properties. Among them, GeS, GeSe, SnS, and SnSe crystallize in an orthorhombic structure (Pbnm) at ambient conditions ...
Yuhua Luo, Min Wu, Ye Wu, Kai Wang
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Pressure-induced semiconductor–metal phase transition in Mg2Si

Solid State Communications, 2012
Abstract In situ electrical resistivity measurement of powdered Mg2Si has been performed in a diamond anvil cell up to 25.4 GPa. At about 22.2 GPa, Mg2Si underwent a pressure-induced semiconductor–metal phase transition that took place in the Ni2In-type structure rather than the anti-fluorite structure predicted theoretically.
Wanbin Ren, Yonghao Han, Cailong Liu, Ningning Su, Yan Li, Boheng Ma, Yanzhang Ma, Chunxiao Gao   +7 more
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Semiconductor-to-metallic phase transition of VO2 by laser excitation

Journal of Electronic Materials, 2004
VO2 thin films deposited on MgO and fused silica glass substrates were prepared by the pulsed laser deposition (PLD) technique, which shows phase transition (PT) from the monoclinic semiconductor phase to a metallic tetragonal rutile structure at temperatures over 68°C. The observed PT is reversible, showing a typical hysteresis.
H. Liu, O. Vasquez, V. R. Santiago, L. Diaz, F. E. Fernandez   +4 more
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Model for infrared detection by a metal-semiconductor phase transition

Infrared Physics, 1976
Abstract An isothermal i.r. detector element which senses i.r. radiation by the change in conductivity of a transition metal oxide at its first order metal—semiconductor phase transition is described. The detector element is of the thermal type operating at ambient temperature, and its mode of operation is quasi-photoconductive.
R.S. Scott, G.E. Fredericks
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Concentration model of semiconductor-metal phase transitions in SmS

Physics of the Solid State, 2008
Model calculations explaining the mechanism of the semiconductor-metal phase transition in SmS are carried out. The model, slightly modified, draws upon methods employed earlier to account for the concentration mechanism of piezoelectric resistance and thermovoltaic effect in SmS.
V. V. Kaminskiĭ, L. N. Vasil’ev
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Semiconductor-metal and semiconductor-magnetic half-metal phase transitions in layered SrAgSeF phases doped with oxygen and nitrogen

Technical Physics Letters, 2012
Results of ab initio band calculations for a layered nonmagnetic SrAgSeF semiconductors consisting of [SrF]/[AgSe] alternating blocks show that the partial O → F substitution leads to a semiconductormetal phase transition due to “metallization” of the [AgSe] bocks. The oxygen-doped SrAgSeF1 − xOx phase possesses a metal/semiconductor periodic structure
V. V. Bannikov, A. L. Ivanovskii
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Phase transitions and semiconductor-metal transition in V1−xGaxO2 Single Crystals

Physica Status Solidi (a), 1976
The electrical, thermoelectric, magnetic, and crystallographic properties of Ga-doped VO2 single crystals V1−xGaxO2 (0 ≦ x ≦ 0.013) are investigated. By Ga-doping the transition temperature of the semiconductor-metal transition of VO2 is elevated and the resistivity discontinuity is little increased.
W. Brückner, U. Gerlach, W. Moldenhauer, H. P. Brückner, N. Mattern, H. Oppermann, E. Wolf   +6 more
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Robust Metal and Semiconductor Phase Transition Memristor Using Ag‐Intercalated Transition Metal Dichalcogenide

Advanced Materials
Abstract Metal (1T/1T')‐semiconductor (2H) phase transition memristors (PTMEMs) based on intercalated alkali metal ions (Li + ) in transition metal dichalcogenides (TMDs) exhibit excellent electrical properties, including heterosynaptic plasticity. However, the low stability
Whan Kyun Kim, Ga Young Cho, Thi Thanh Huong Vu, Jun Sun Son, Yong Ha Shin, Hong Woon Yun, Min Seok Kim, Yong Seon Shin, Heejun Yang, Woo Jong Yu   +9 more
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