Results 231 to 240 of about 25,904 (258)

Nanoindentation of silicon: hardness and semiconductor-metal phase transition

MRS Proceedings, 2003
ABSTRACTThe hardness of a thin film of silicon is studied in the framework of the 3D Hertzian contact theory. The anisotropy and the anharmonicity of silicon are taken into account for the first time. It is shown that the contribution of plasticity to the hardness of silicon is significant while we know that it possesses strong covalent bonds and ...
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Electron Metal-Dielectric Phase Transitions in Semiconductors under Pressure

Russian Physics Journal, 2004
The effect of uniform pressure on the character of metal-dielectric transitions in compensated weakly- and highly doped semiconductors (WHDCS) is considered. The influence of hybridization of resonance quasilocalized impurity states with band continuum states on the transition is shown.
M. I. Daunov, I. K. Kamilov, S. F. Gabibov   +2 more
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Semiconductor-metal kinetic phase transition in nearly magnetic semiconductors exemplified with iron monosilicide

Physics of the Solid State, 2002
Iron monosilicide is used to study the possibility of the semiconductor-metal kinetic phase trans-formation in nearly magnetic semiconductors. It is shown that the heat released by current flow gives rise to a growth in amplitude of spin fluctuations and the attendant splitting of electronic spectra, which, in turn, brings about gap closure and an ...
A. G. Volkov, A. G. Andreeva, O. V. Anoshina, A. A. Povzner   +3 more
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Structural Phase Transitions and Semiconductor-Metal Transition in WO₃

Journal of the Physical Society of Japan, 1980
Semiconducting WO 3 with the donor electrons trapped in oxygen vacancies shows so-called `semiconductor-metal transition' at the triclinic-monoclinic (I) phase transition temperature at about 17°C. Resistivity discontinuities as large as a factor 10 2 have been observed at the monoclinic: (II)-triclinic phase transition at about -40°C.
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“Semiconductor-metal” conductivity phase transition temperature in chalcogenide glassy semiconductors and overheating effect

Technical Physics Letters, 1997
It is shown that thin films of chalcogenide glassy semiconductors may repeatedly withstand short-term heating to temperatures substantially in excess of the “semiconductor-metal” transition temperature and the melting point Tm without being damaged.
É. A. Lebedev, K. D. Tséndin
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Metal-insulator transition; nucleation of a conducting phase in amorphous semiconductors

Journal of Non-Crystalline Solids, 1970
Abstract The amorphous semiconductors are assumed to be capable of existing in two distinct thermodynamic states, an insulating state at low temperature and a “metallic” state at high temperature. The thermodynamics of Mott transition is considered in a framework of field dependent equilibrium free carrier concentration at the lattice temperature ...
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Variations in optical reflectivity in the semiconductor–metal phase transition of vanadium dioxide

Journal of Non-Crystalline Solids, 2004
Abstract Crystalline vanadium dioxide (VO 2 ) is a material with a phase transition at a critical temperature of 67 °C [Metal–Insulator Transitions, Taylor & Francis, London, 1974, Nauka, Moscow, 1979; The Metal–Semiconductor Phase Transition and its Applications, Nauka, Leningrad, 1979, p. 183].
A. Ilinski, F. Silva-Andrade, E. Shadrin, V. Klimov   +3 more
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Qswitching of a resonator by the metal–semiconductor phase transition

Soviet Journal of Quantum Electronics, 1981
An experimental study was made of Q switching in a resonator by a mirror with a nonlinear reflection coefficient. This mirror was an interference reflecting structure containing a vanadium oxide film capable of undergoing a metal--semiconductor transition.
A A Bugaev, Boris P Zakharchenya, F A Chudnovskiĭ   +2 more
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Photoinduced instability and semiconductor-metal phase transition in a Peierls system

Physics of the Solid State, 1998
A microscopic theory of the appearance of electron-phonon instability and a semiconductor-metal phase transition away from thermodynamic equilibrium in a Peierls system upon the optical excitation of electron-hole pairs is devised. An equation which specifies the dependence of the order parameter of the phase transition and the uniquely related gap ...
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Displacive reconstruction phase transitions of clean transition metal and semiconductor surfaces

2008
The higher periodicities observed on several clean crystalline surfaces are discussed. Among the models invoked to account for their formation, we focus here on electronic mechanisms, particularly of the charge-density-wave type. A one-dimensional model is introduced to illustrate the continuity between the charge-density wave picture and the chemical ...
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