Results 221 to 230 of about 25,904 (258)

Antiferromagnetic phase in doped semiconductors near the insulator–metal phase transition

physica status solidi c, 2006
AbstractWe show for n ‐type semiconductors, using Ge:As and 4H ‐SiC:N as examples, that the spin density measured by electron spin resonance (ESR) falls sharply near the insulator–metal (IM) transition. Two reasons might be responsible for this phenomenon: potential fluctuations with concentration of the electrons in local minima or local ...
A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, S. I. Goloshchapov, E. N. Mokhov   +4 more
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Semiconductor-Metal Phase Transition at the Surface of SmS

1988
Publisher Summary In recent times, there has been a lot of interest in the applicability of capacitance transient spectroscopy, monitoring the relaxation of the space charge region in metal–insulator–semiconductor (MIS) structures. This chapter discusses further experimental material obtained by this method.
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Conductivity of the opal-VO2 composite at the semiconductor-metal phase transition

Semiconductors, 2009
The Shape of the branches for the thermal hysteresis loop of the electrical conductivity for the opal-VO2 composite shows a size dependence near the semiconductor-metal phase transition. The steps observed on the heating and cooling branches of the loop are determined by collective phase transitions in separate monodisperse groups of VO2 nanocrystals ...
E. B. Shadrin, D. A. Kurdyukov, A. V. Ilinskiy, V. G. Golubev   +3 more
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Semiconductor-metal phase transition in LaBi under high pressure

Physics of the Solid State, 2015
The effect of pressure up to 22 GPa on the electrical resistance and thermopower of lanthanum monobismuthide at room temperature has been studied. A semiconductor-metal phase transition in the pressure range of 4–6 GPa has been revealed from the change in the sign of thermopower and the thermal dependence of the electrical resistance of LaBi.
N. N. Stepanov, N. V. Morozova, A. E. Kar’kin, I. V. Korobeinikov, A. V. Golubkov, V. V. Kaminskii   +5 more
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Nonequilibrium semiconductor-metal phase transition due to self-heating

Technical Physics, 2002
A model of the nonequilibrium semiconductor-metal phase transition in narrow-gap transition metals due to self-heating is considered. It is shown that self-heating may diminish the energy gap and, as a consequence, increase the current. Parameters resposible for the bistable behavior of the system are found.
A. V. Melkikh, A. A. Povzner
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Photoinduced semiconductor-metal phase transition in a peierls system

Journal of Experimental and Theoretical Physics, 2007
The dynamical equation for the order parameter of the metal-semiconductor phase transition, as well as the kinetic equation for the density of nonequilibrium electron-hole pairs of a Peierls system in a light field, has been derived. An expression for the time τ of the nonthermal photoinduced semiconductor-metal phase transition has been obtained from ...
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Superconductivity and semiconductor–metal phase transition in the system BaPb1–xBixO3

Physica Status Solidi (a), 1977
Detailed infrared absorption, superconductivity, and structural investigations are made in the perovskite system BaPb1–xBixO3 to explain the semiconductor–metal phase transition in this system. It is proposed that the electronic states of Bi3+ in BaPb1–xBixO3 are localized, with a sudden delocalization of them at x = 0·4 where the semiconductor energy ...
Y. Khan, K. Nahm, M. Rosenberg, H. Willner   +3 more
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Phase‐Dependent Band Gap Engineering in Alloys of Metal‐Semiconductor Transition Metal Dichalcogenides

Advanced Functional Materials, 2020
AbstractBandgap engineering plays a critical role in optimizing the electrical, optical and (photo)‐electrochemical applications of semiconductors. Alloying has been a historically successful way of tuning bandgaps by making solid solutions of two isovalent semiconductors.
Shuxi Wang, John Cavin, Zahra Hemmat, Khagesh Kumar, Alexander Ruckel, Leily Majidi, Hamed Gholivand, Radwa Dawood, Jordi Cabana, Nathan Guisinger, Robert F. Klie, Fatemeh Khalili‐Araghi, Rohan Mishra, Amin Salehi‐Khojin   +13 more
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Surface phase transitions at metal–semiconductor interfaces: a revisit is needed

Applied Surface Science, 2004
In this article, we review some of the most recent progress and understanding in the low temperature surface phase transitions at prototypical metal-semiconductor interfaces. We essentially focus on quantitative surface structural information obtained by using a significant variety of specialised techniques for the individual phases of a model system ...
M.E Dávila, J Avila, H Ascolani, G Le Lay, M Göthelid, U.O Karlsson, M.C Asensio   +6 more
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Semiconductor to metal transition in the black phase of SmS under pressure

Journal of Magnetism and Magnetic Materials, 1985
Abstract Hall coefficient and resistivity of black phase of SmS were measured as functions of temperature and pressure up to 10 kbar. An interpretation of these electronic transport properties involving acceptor-like bound magnetic polaron levels is presented. It implies that the semiconductor to metal transition observed at 4 kbar originates from an
M. Konczykowski, G. Bordier, J. Morillo, P. Haen, J.P. Sénateur   +4 more
openaire   +1 more source