Results 71 to 80 of about 258,084 (292)
Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor
Advanced Functional Materials, EarlyView.Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo +10 more
wiley +1 more source
A systematic study of the negative thermal expansion in zinc-blende and diamond-like semiconductors
New Journal of Physics, 2019 Upon heating, almost all zinc-blende (ZB) and diamond-like semiconductors undergo volume contraction at low temperature, i.e. negative thermal expansion (NTE), instead of commonly expected expansion.
Kaike Yang +5 more
doaj +1 more source
Spin Current and Shot Noise in Single-Molecule Quantum Dots with a Phonon Mode
, 2005 In this paper we investigate the spin-current and its shot-noise spectrum in a single-molecule quantum dot coupled with a local phonon mode. We pay special attention on the effect of phonon on the quantum transport property.
D. C. Langreth +5 more
core +1 more source
High Entropy Wide‐Bandgap Borates with Broadband Luminescence and Large Nonlinear Optical properties
Advanced Functional Materials, EarlyView.High‐entropy rare‐earth borates exhibit excellent nonlinear optical and broadband luminescence properties arising from multi‐component doping, chemical disorder, increased configurational entropy, and increased lattice and electronic anharmonicity. This formulation enabled us to obtain a large, environmentally stable single crystal with 3X higher laser‐
Saugata Sarker +14 more
wiley +1 more source
Raman scattering in osmium under pressure
, 2005 The effect of pressure and temperature on the Raman-active phonon mode of osmium metal has been investigated for pressures up to 20 GPa and temperatures in the range 10--300 K.
Loa, I. +3 more
core +1 more source
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Electron–phonon interaction for adiabatic anharmonic phonons [PDF]
Journal of Physics: Condensed Matter, 2005 A model with Holstein-like electron-phonon coupling is studied in the limit of adiabatic phonons. The phonon distribution is anharmonic with two degenerate maxima. This model can be related to fermions in a correlated binary alloy and describes microscopic phase separation.
Ziegler, Klaus G., Schneider, Daniela
openaire +3 more sources
Advanced Functional Materials, EarlyView.AgCrP2S6 reveals a momentum‐indirect band edge (≈1.35 eV) and chain‐locked linear dichroism: the first direct transitions emerge at 1.6–1.8 eV for E||a. Resonant Raman and photoemission corroborate this assignment. In ACPS/graphene heterostructures, photocurrent turns on above ≈1.5 eV and follows the same polarization selection rules (anisotropy ≈0.53),
Oleksandr Volochanskyi +9 more
wiley +1 more source
3D continuum phonon model for group-IV 2D materials
Beilstein Journal of Nanotechnology, 2017 A general three-dimensional continuum model of phonons in two-dimensional materials is developed. Our first-principles derivation includes full consideration of the lattice anisotropy and flexural modes perpendicular to the layers and can thus be applied
Morten Willatzen +3 more
doaj +1 more source
, 2008 We report first principles density functional perturbation theory calculations and inelastic neutron scattering measurements of the phonon density of states, dispersion relations and electromechanical response of PbTiO3, BaTiO3 and SrTiO3.
A. W. Hewat +10 more
core +1 more source