Results 41 to 50 of about 140,358 (312)
Spray-coated perovskite hemispherical photodetector featuring narrow-band and wide-angle imaging
Sphere imagers featuring specific wavelength recognition and wide-angle imaging are required to meet the fast development of modern technology. However, it is still challenging to deposit high-quality photosensitive layers on sphere substrates from low ...
Xiaopeng Feng +7 more
semanticscholar +1 more source
The realization of room-temperature-operated, high-performance, miniaturized, low-power-consumption and Complementary Metal-Oxide-Semiconductor (CMOS)-compatible mid-infrared photodetectors is highly desirable for next-generation optoelectronic ...
Jianfeng Wu +18 more
semanticscholar +1 more source
High-speed III-V nanowire photodetector monolithically integrated on Si
Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry ...
S. Mauthe +7 more
semanticscholar +1 more source
Polarization-Sensitive Self-Powered Type-II GeSe/MoS2 Van der Waals Heterojunction Photodetector.
Polarization-sensitive photodetectors are highly desirable for high performance optical signal capture and stray light shielding in order to enhance the capability for detection and identification of targets in the dark, haze and other complex ...
Ye Xin +10 more
semanticscholar +1 more source
Optical system consisting of single-mode optical fiber and p-i-n photodiode semiconductor chip with InGaAs active layer was investigated. Considered photodetector module has responsivity in 1.3–1.6 µm.
Ya. N. Kovach +7 more
doaj +1 more source
Conjugated Polymer (MEH-PPV:MWCNTs) Organic Nanocomposite for Photodetector Application
Fabrication of a photodetector consists of the conjugated polymer "MEH-PPV"- poly (2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenlenevinylene) and MEH-PPV:MWCNT nanocomposite thin film. The volume ratio investigated was 0.75:0.25.
Baghdad Science Journal
doaj +1 more source
Broadband photodetectors have attracted substantial attention in recent years. The ternary chalcogenide Ta2NiSe5 is a layered material with a direct narrow-band gap (Eg ~ 0.33 eV) which possesses greatly potential to broadband photodetectors.
Yan Zhang +11 more
doaj +1 more source
BER and outage probability of DPSK subcarrier intensity modulated free space optics in fully developed speckle. [PDF]
In this paper a differential phase shift keying (DPSK) subcarrier intensity modulated (SIM) free space optical (FSO) link is considered in negative exponential atmospheric turbulence environment.
Ghassemlooy, Zabih +2 more
core +2 more sources
Controlled Synthesis of 2D Palladium Diselenide for Sensitive Photodetector Applications
Palladium diselenide (PdSe2), a thus far scarcely studied group‐10 transition metal dichalcogenide has exhibited promising potential in future optoelectronic and electronic devices due to unique structures and electrical properties.
Longhui Zeng +10 more
semanticscholar +1 more source
PBTTT‐OR‐R, a C14‐alkoxy/alkyl‐PBTTT polymer derivative, is of substantial interest for optoelectronics due to its specific fullerene intercalation behavior and enhanced charge‐transfer absorption. Comparing this polymer with (S) and without (O) homocoupling defects reveals that PBTTT‐OR‐R(O) forms stable co‐crystals with PC61BM, while PBTTT‐OR‐R(S ...
Zhen Liu +14 more
wiley +1 more source

