Results 201 to 210 of about 27,754 (260)
Feature Comparison and Process Optimization of Multiple Dry Etching Techniques Applied in Inner Spacer Cavity Formation of GAA NSFET. [PDF]
Nanomaterials (Basel)Wang M +5 more
europepmc +1 more source
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Plasma etching—A discussion of mechanisms
Journal of Vacuum Science and Technology, 1979The purpose of the present paper is to review the salient features of our understanding of phenomena which occur in plasma etching situations. The etching process is discussed in terms of three basic steps: adsorption, product formation, and product desorption.
J W Coburn, Harold F Winters, Coburn J W
exaly +2 more sources
Plasma Chemistry and Plasma Processing, 1982
The mechanistic and parametric complexity of a plasma etching environment often causes confusion and delays in the development of a suitable plasma etching process. This paper is an attempt to alleviate this problem by discussing some of the important physical and chemical phenomena and, where possible, relating these phenomena to apparatus selection ...
J W Coburn, Coburn J W
exaly +2 more sources
The mechanistic and parametric complexity of a plasma etching environment often causes confusion and delays in the development of a suitable plasma etching process. This paper is an attempt to alleviate this problem by discussing some of the important physical and chemical phenomena and, where possible, relating these phenomena to apparatus selection ...
J W Coburn, Coburn J W
exaly +2 more sources
The Behaviour of the Etching Rate in a Model of Plasma Etching
ZAMM - Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik, 1994AbstractDiese Arbeit ist sowohl der Modellierung einiger Oberflächen‐ und Volumenprozesse beim Plasmaätzen durch gewöhnliche Differentialgleichungen als auch der qualitativen Untersuchung des resultierenden Systems gewidmet. Die explizite Konstruktion von Attraktoreinhüllenden erlaubt, die Ätzrate des Prozesses durch eine Folge von Schranken ...
Kern, Marietta, Koksch, Norbert
openaire +1 more source
IEEE Circuits and Devices Magazine, 1990
An overview is given of plasma-etch processes used in microelectronics fabrication for pattern transfer, and the main requirements for plasma-assisted etching are outlined. The two primary etch mechanisms-chemical and physical-are examined. Issues involved in bringing plasma processes to the factory are discussed.
T.J. Cotler, M.E. Elta
openaire +1 more source
An overview is given of plasma-etch processes used in microelectronics fabrication for pattern transfer, and the main requirements for plasma-assisted etching are outlined. The two primary etch mechanisms-chemical and physical-are examined. Issues involved in bringing plasma processes to the factory are discussed.
T.J. Cotler, M.E. Elta
openaire +1 more source
Journal of Applied Physics, 1987
The etching of silicon in a pulsed plasma using SF6 gas is investigated. For short pulses the Si etch rate for a pulsed plasma is essentially the same as for the continuous plasma, in spite of the duty cycle being only 20%. An heuristic model of the etching has been developed which accurately predicts the pulsed plasma etch rates and sets limits on ...
R. W. Boswell, R. K. Porteous
openaire +1 more source
The etching of silicon in a pulsed plasma using SF6 gas is investigated. For short pulses the Si etch rate for a pulsed plasma is essentially the same as for the continuous plasma, in spite of the duty cycle being only 20%. An heuristic model of the etching has been developed which accurately predicts the pulsed plasma etch rates and sets limits on ...
R. W. Boswell, R. K. Porteous
openaire +1 more source
Plasma Etching of Patterned Tungsten
Materials Science Forum, 1993Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size ...
openaire +2 more sources
AIP Conference Proceedings, 2008
In this paper, we define plasma etch process and we describe two etch equipments used in our clean room: Lam 4500 and Lam 4400.
Belkhelfa Nabila +3 more
openaire +1 more source
In this paper, we define plasma etch process and we describe two etch equipments used in our clean room: Lam 4500 and Lam 4400.
Belkhelfa Nabila +3 more
openaire +1 more source
Physica Scripta, 1991
Today, plasma etching is the most important patterning technique in the manufacture of semiconductor integrated circuits; however, the physics and chemistry involved in this process are still not well understood. This paper describes the most important physical processes that control this technique and explains their individual governing equations.
J I Ulacia F, S Schwarzl
openaire +1 more source
Today, plasma etching is the most important patterning technique in the manufacture of semiconductor integrated circuits; however, the physics and chemistry involved in this process are still not well understood. This paper describes the most important physical processes that control this technique and explains their individual governing equations.
J I Ulacia F, S Schwarzl
openaire +1 more source
1976 International Electron Devices Meeting, 1976
Experimental plasma etching apparatus and methods utilizing BCl 3 etch gas have been developed for the accurate patterning of thin Al and Al-Si alloy metallization as used in integrated circuit fabrication. A two micron linewidth capability has been achieved for the patterning of 0.5 micron thick metallization on three inch diameter wafers with ...
R.G. Poulsen, H. Nentwich, S. Ingrey
openaire +1 more source
Experimental plasma etching apparatus and methods utilizing BCl 3 etch gas have been developed for the accurate patterning of thin Al and Al-Si alloy metallization as used in integrated circuit fabrication. A two micron linewidth capability has been achieved for the patterning of 0.5 micron thick metallization on three inch diameter wafers with ...
R.G. Poulsen, H. Nentwich, S. Ingrey
openaire +1 more source