Results 211 to 220 of about 27,754 (260)
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Japanese Journal of Applied Physics, 1977
A new plasma etching technique using microwave discharge is presented. Silicon wafers are etched by the discharge in a (CF4+O2) gas mixture. Fine patterns with dimensions of 1 µm are etched up to 1 µm in depth without undercutting at a pressure of 5×10-4 Torr with an Al mask having 0.08 µm thickness.
Keizo Suzuki +3 more
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A new plasma etching technique using microwave discharge is presented. Silicon wafers are etched by the discharge in a (CF4+O2) gas mixture. Fine patterns with dimensions of 1 µm are etched up to 1 µm in depth without undercutting at a pressure of 5×10-4 Torr with an Al mask having 0.08 µm thickness.
Keizo Suzuki +3 more
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Journal of the American Ceramic Society, 1983
A new technique is presented for the etching of sialon and Si 3 N 4 for microstructural control purposes. This technique, plasma etching, is rapid and delineates both β‐sialon and glassy phases
Chris Chatfield, Hans Norström
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A new technique is presented for the etching of sialon and Si 3 N 4 for microstructural control purposes. This technique, plasma etching, is rapid and delineates both β‐sialon and glassy phases
Chris Chatfield, Hans Norström
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Applied Physics Letters, 1979
Reactive-plasma etching is conventionally carried out using one power supply to both generate the glow discharge and to control the flux and energy of ion bombardment on the substrate. A three-electrode, or triode, configuration is described in which these two functions are controlled quasi-independently; results obtained with this arrangement are ...
V. J. Minkiewicz, B. N. Chapman
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Reactive-plasma etching is conventionally carried out using one power supply to both generate the glow discharge and to control the flux and energy of ion bombardment on the substrate. A three-electrode, or triode, configuration is described in which these two functions are controlled quasi-independently; results obtained with this arrangement are ...
V. J. Minkiewicz, B. N. Chapman
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On the plasmaphysics of plasma-etching
Pure and Applied Chemistry, 1985Abstract
T. J. Bisschops, F. J. de Hoog
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1992
Processes and mechanisms of plasma etching in fluorine and chlorine chemistries are shortly reviewed.
Riccardo d’Agostino +1 more
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Processes and mechanisms of plasma etching in fluorine and chlorine chemistries are shortly reviewed.
Riccardo d’Agostino +1 more
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2009
This chapter contains sections titled: Introduction Plasma Etching Reactive Ion Etching Etching of Specific Materials Etching Induced Damage Questions ...
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This chapter contains sections titled: Introduction Plasma Etching Reactive Ion Etching Etching of Specific Materials Etching Induced Damage Questions ...
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1990
Plasma etching has largely replaced wet etching for microcircuit fabrication because of its finer resolution and adaptability to increased throughput and automation. The simplest reactors consist of opposed parallel plate electrodes in a chamber that can be maintained at low pressure, typically ranging from 0.01 to 1 Torr (1.33–133 Pa).
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Plasma etching has largely replaced wet etching for microcircuit fabrication because of its finer resolution and adaptability to increased throughput and automation. The simplest reactors consist of opposed parallel plate electrodes in a chamber that can be maintained at low pressure, typically ranging from 0.01 to 1 Torr (1.33–133 Pa).
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Applications of Plasma Etching
1990The main driving force behind the rapid development of plasma etching or dry etching as it is often called is today’s IC-fabrication. Practically all pattern transfer steps from the mask to the underlying substrate are performed using dry etching techniques.
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1990
Plasma-assisted etching is an essential part of the microstructuring process in fabrication of integrated semiconductor circuits and micromechanic devices. Thereby structures down to the sub-μm-range are etched into layers of isolators, semiconductors, metals and metal-semiconductor-compounds.
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Plasma-assisted etching is an essential part of the microstructuring process in fabrication of integrated semiconductor circuits and micromechanic devices. Thereby structures down to the sub-μm-range are etched into layers of isolators, semiconductors, metals and metal-semiconductor-compounds.
openaire +1 more source