Results 211 to 220 of about 27,823 (260)
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The Behaviour of the Etching Rate in a Model of Plasma Etching

ZAMM - Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik, 1994
AbstractDiese Arbeit ist sowohl der Modellierung einiger Oberflächen‐ und Volumenprozesse beim Plasmaätzen durch gewöhnliche Differentialgleichungen als auch der qualitativen Untersuchung des resultierenden Systems gewidmet. Die explizite Konstruktion von Attraktoreinhüllenden erlaubt, die Ätzrate des Prozesses durch eine Folge von Schranken ...
Kern, Marietta, Koksch, Norbert
openaire   +1 more source

Plasma-etch technology

IEEE Circuits and Devices Magazine, 1990
An overview is given of plasma-etch processes used in microelectronics fabrication for pattern transfer, and the main requirements for plasma-assisted etching are outlined. The two primary etch mechanisms-chemical and physical-are examined. Issues involved in bringing plasma processes to the factory are discussed.
T.J. Cotler, M.E. Elta
openaire   +1 more source

Plasma Etching of Patterned Tungsten

Materials Science Forum, 1993
Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size ...
openaire   +2 more sources

A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

Materials, 2022
Mariusz Sochacki   +2 more
exaly  

PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS

2021
YATSUDA KOICHI   +9 more
openaire   +1 more source

Plasma etching behavior of Y2O3 ceramics: Comparative study with Al2O3

Applied Surface Science, 2016
Ke Wang, Jing-Feng Li, Jin Luo
exaly  

Microscopic uniformity in plasma etching

Journal of Vacuum Science & Technology an Official Journal of the American Vacuum Society B, Microelectronics Processing and Phenomena, 1992
Gottscho Richard A, Jürgensen C W
exaly  

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