Results 231 to 240 of about 1,458,991 (299)
Influence of Device Structure and Manufacturing Thermal Budget on Channel Release Module in GAA NSFET and Process Optimization. [PDF]
Wang M +6 more
europepmc +1 more source
Twin‐Lever Multifunctional Meta‐Optics With High Longitudinal Tolerance
We introduce a single‐layer, CMOS‐compatible metasurface that allows for polarization‐programmable, achromatic broadband dual‐mode imaging with high longitudinal tolerance. The twin‐lever design combines bright‐field focusing and vortex‐based edge‐enhanced imaging while managing axial intensity distribution from 488 to 633 nm.
Isma Javed +10 more
wiley +1 more source
Submicron microdevice patterning with plasma-thinned nail-polish microfiber shadow masks. [PDF]
Xie Y +5 more
europepmc +1 more source
A biomimetic force‐electric nanotentacle‐enabled tantalum (Ta) implant with surface‐nanostructured LiTaO3 (n‐LiTaO3) was first developed via laser nanofabrication combined with Li+‐induced in situ reaction, enabling the transduction of ultrasound into bioelectrical cues.
Taixing Zhang +15 more
wiley +1 more source
High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiN<sub>x</sub> Layer Etching Technique. [PDF]
Cao X +13 more
europepmc +1 more source
Ageing of Oxygen-Plasma-Treated Polytetrafluoroethylene Surfaces: Revealing a Novel Link Between Morphological Evolution and Wettability. [PDF]
Maryam R, Barni R, Roman HE, Riccardi C.
europepmc +1 more source
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The Behaviour of the Etching Rate in a Model of Plasma Etching
ZAMM - Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik, 1994AbstractDiese Arbeit ist sowohl der Modellierung einiger Oberflächen‐ und Volumenprozesse beim Plasmaätzen durch gewöhnliche Differentialgleichungen als auch der qualitativen Untersuchung des resultierenden Systems gewidmet. Die explizite Konstruktion von Attraktoreinhüllenden erlaubt, die Ätzrate des Prozesses durch eine Folge von Schranken ...
Kern, Marietta, Koksch, Norbert
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Plasma etching—A discussion of mechanisms
Journal of Vacuum Science and Technology, 1979The purpose of the present paper is to review the salient features of our understanding of phenomena which occur in plasma etching situations. The etching process is discussed in terms of three basic steps: adsorption, product formation, and product desorption.
J. W. Coburn, Harold F. Winters
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Journal of the American Ceramic Society, 1983
A new technique is presented for the etching of sialon and Si 3 N 4 for microstructural control purposes. This technique, plasma etching, is rapid and delineates both β‐sialon and glassy phases
Chris Chatfield, Hans Norström
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A new technique is presented for the etching of sialon and Si 3 N 4 for microstructural control purposes. This technique, plasma etching, is rapid and delineates both β‐sialon and glassy phases
Chris Chatfield, Hans Norström
openaire +1 more source

