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Remote Plasma Selective Silicon Etching Enabled Tunable Sub-Fin Process for Improved Parasitic Bottom Channel Control in Gate-All-Around Nanosheet Field-Effect Transistors. [PDF]

Nanomaterials (Basel)
Li J, Gao Y, Zhang DW.
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Regulation of defects and nitrogen species on carbon nanotube by plasma-etching for peroxymonosulfate activation: Inducing non-radical/radical oxidation of organic contaminants.

Journal of Hazardous Materials, 2022
The structural defects and heteroatom dopants of carbonaceous materials play critical roles in their activation of peroxymonosulfate (PMS) for organic pollutants' removal.
Shiqi Liu, Siyuan Yin, Zichen Zhang, Li Feng, Yongze Liu, Liqiu Zhang   +5 more
semanticscholar   +1 more source

Damage-free finishing of CVD-SiC by a combination of dry plasma etching and plasma-assisted polishing

International Journal of Machine Tools and Manufacture, 2017
H. Deng, K. Endo, K. Yamamura
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Plasma atomic layer etching of GaN/AlGaN materials and application: An overview

Journal of Semiconductors, 2022
With the development of the third generation of semiconductor devices, it is essential to achieve precise etching of gallium nitride (GaN) materials that is close to the atomic level.
Lulu Guan, Xingyu Li, Dongchen Che, Kaidong Xu, Shiwei Zhuang   +4 more
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Effects of Ion Energy and Density on the Plasma Etching-Induced Surface Area, Edge Electrical Field, and Multivacancies in MoSe2 Nanosheets for Enhancement of the Hydrogen Evolution Reaction.

Small, 2020
Plasma functionalization can increase the efficiency of MoSe2 in the hydrogen evolution reaction (HER) by providing multiple species but the interactions between the plasma and catalyst are not well understood. In this work, the effects of the ion energy
Dezhi Xiao, Qingdong Ruan, Deliang Bao, Yang Luo, Chao Huang, Siying Tang, Jie Shen, Cheng Cheng, P. Chu   +8 more
semanticscholar   +1 more source

Facile Synthesis of LaCoO3 with a High Oxygen Vacancy Concentration by the Plasma Etching Technique for High-Performance Oxygen Ion Intercalation Pseudocapacitors

, 2020
As the intercalation places of oxygen during the oxygen ion intercalation process, the content of oxygen vacancy has a significant influence on the electrochemical properties of perovskite pseudocapacitance.
Guanlun Guo, O.J. Kang, Jipan Yu, Yihui Liu, Shuanglong Feng, Mingrui Wei   +5 more
semanticscholar   +1 more source

High speed and low roughness micromachining of silicon carbide by plasma etching aided femtosecond laser processing

, 2020
Silicon carbide has a high hardness and corrosion resistance. Accordingly, high rate machining of this material is a big challenge to obtain good surface quality. In this work, plasma etching aided femtosecond laser micromachining was proposed to address
Wu Chen, Xudong Fang, Feng Liu, Xin Guo, R. Maeda, Zhuangde Jiang   +5 more
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Plasma etching behavior of Y2O3 ceramics: Comparative study with Al2O3

Applied Surface Science, 2016
Yunhe Cao, Lei Zhao, Jin Luo, Ke Wang, Boping Zhang, H. Yokota, Yoshiyasu Ito, Jingfeng Li   +7 more
semanticscholar   +3 more sources

Plasma etching of high aspect ratio features in SiO2 using Ar/C4F8/O2 mixtures: A computational investigation

Journal of Vacuum Science and Technology, 2019
Plasma etching of high aspect ratio (HAR) features, typically vias, is a critical step in the fabrication of high capacity memory. With aspect ratios (ARs) exceeding 50 (and approaching 100), maintaining critical dimensions (CDs) while eliminating or ...
Shuo Huang, C. Huard, S. Shim, S. Nam, I. Song, Siqing Lu, M. Kushner   +6 more
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