Results 251 to 260 of about 2,786,485 (335)
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Enhanced capacitive property of HfN film electrode by plasma etching for supercapacitors
Materials letters (General ed.), 2019Transition metal nitrides (TMN) films, fabricated by physical vapor deposition (PVD), have attracted much attention in supercapacitor electrode applications due to their high conductivity, easily-controlled composition, high structural and chemical ...
Ze-Min Gao +4 more
semanticscholar +1 more source
α-MoO3- by plasma etching with improved capacity and stabilized structure for lithium storage
Nano Energy, 2018Compared with most cathodes for lithium-ion batteries (LIBs), α-MoO3 exhibits high specific capacity and therefore receives widespread attention. However, due to its irreversible structural transformation, the capacity of α-MoO3 declines rapidly upon ...
Guobin Zhang +8 more
semanticscholar +1 more source
IEEE Circuits and Devices Magazine, 1990
An overview is given of plasma-etch processes used in microelectronics fabrication for pattern transfer, and the main requirements for plasma-assisted etching are outlined. The two primary etch mechanisms-chemical and physical-are examined. Issues involved in bringing plasma processes to the factory are discussed.
T.J. Cotler, M.E. Elta
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An overview is given of plasma-etch processes used in microelectronics fabrication for pattern transfer, and the main requirements for plasma-assisted etching are outlined. The two primary etch mechanisms-chemical and physical-are examined. Issues involved in bringing plasma processes to the factory are discussed.
T.J. Cotler, M.E. Elta
openaire +1 more source
Mechanism of oxygen and argon low pressure plasma etching on polyethylene (UHMWPE)
Surface & Coatings Technology, 2019Different preferential sites for etching are observed for low pressure argon and oxygen plasma on ultra-high molecular weight polyethylene. Atomic force microscopy analysis showed an organized pattern after 1 min of oxygen plasma treatment.
S. Spyrides +4 more
semanticscholar +1 more source
Microelectronic Engineering, 2018
Atmospheric Pressure Plasmas (APPs) are promising alternatives to their low-pressure counterparts for material surface treatment due to their potential for cost-effective continuous processing.
P. Dimitrakellis, E. Gogolides
semanticscholar +1 more source
Atmospheric Pressure Plasmas (APPs) are promising alternatives to their low-pressure counterparts for material surface treatment due to their potential for cost-effective continuous processing.
P. Dimitrakellis, E. Gogolides
semanticscholar +1 more source
Applied Physics Letters, 1979
Reactive-plasma etching is conventionally carried out using one power supply to both generate the glow discharge and to control the flux and energy of ion bombardment on the substrate. A three-electrode, or triode, configuration is described in which these two functions are controlled quasi-independently; results obtained with this arrangement are ...
V. J. Minkiewicz, B. N. Chapman
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Reactive-plasma etching is conventionally carried out using one power supply to both generate the glow discharge and to control the flux and energy of ion bombardment on the substrate. A three-electrode, or triode, configuration is described in which these two functions are controlled quasi-independently; results obtained with this arrangement are ...
V. J. Minkiewicz, B. N. Chapman
openaire +1 more source
Japanese Journal of Applied Physics, 1977
A new plasma etching technique using microwave discharge is presented. Silicon wafers are etched by the discharge in a (CF4+O2) gas mixture. Fine patterns with dimensions of 1 µm are etched up to 1 µm in depth without undercutting at a pressure of 5×10-4 Torr with an Al mask having 0.08 µm thickness.
Keizo Suzuki +3 more
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A new plasma etching technique using microwave discharge is presented. Silicon wafers are etched by the discharge in a (CF4+O2) gas mixture. Fine patterns with dimensions of 1 µm are etched up to 1 µm in depth without undercutting at a pressure of 5×10-4 Torr with an Al mask having 0.08 µm thickness.
Keizo Suzuki +3 more
openaire +1 more source
AIP Conference Proceedings, 2008
In this paper, we define plasma etch process and we describe two etch equipments used in our clean room: Lam 4500 and Lam 4400.
Belkhelfa Nabila +3 more
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In this paper, we define plasma etch process and we describe two etch equipments used in our clean room: Lam 4500 and Lam 4400.
Belkhelfa Nabila +3 more
openaire +1 more source
, 2020
Continued downscaling of semiconductor devices has placed stringent constraints on all aspects of the fabrication process including plasma-assisted anisotropic etching.
Ryan J. Gasvoda +4 more
semanticscholar +1 more source
Continued downscaling of semiconductor devices has placed stringent constraints on all aspects of the fabrication process including plasma-assisted anisotropic etching.
Ryan J. Gasvoda +4 more
semanticscholar +1 more source
Plasma etched polymer microelectrochemical systems
Lab on a Chip, 2002This paper presents a novel technique based on plasma etching for the mass production of polymer microchip devices. The method consists of the patterning of a photo-resist by a high resolution printer on a foil composed of three layers (5 microm copper/50 microm polyimide/5 microm copper).
Joël S, Rossier +7 more
openaire +2 more sources