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Etching Techniques: Plasma and ion beam etching
Physics Bulletin, 1984The technique of wet etching has been used extensively by the semiconductor industry to transfer the fine-line patterns produced by photolithography into thin films of metals and insulators on the surface of semiconductor wafers. During the past few years, however, dry etching techniques have replaced many wet etching processes – a trend that is ...
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2009
This chapter contains sections titled: Introduction Plasma Etching Reactive Ion Etching Etching of Specific Materials Etching Induced Damage Questions ...
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This chapter contains sections titled: Introduction Plasma Etching Reactive Ion Etching Etching of Specific Materials Etching Induced Damage Questions ...
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1990
Plasma-assisted etching is an essential part of the microstructuring process in fabrication of integrated semiconductor circuits and micromechanic devices. Thereby structures down to the sub-μm-range are etched into layers of isolators, semiconductors, metals and metal-semiconductor-compounds.
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Plasma-assisted etching is an essential part of the microstructuring process in fabrication of integrated semiconductor circuits and micromechanic devices. Thereby structures down to the sub-μm-range are etched into layers of isolators, semiconductors, metals and metal-semiconductor-compounds.
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Circulating tumor DNA in advanced solid tumors: Clinical relevance and future directions
Ca-A Cancer Journal for Clinicians, 2021Michael L Cheng +2 more
exaly
1990
Plasma etching has largely replaced wet etching for microcircuit fabrication because of its finer resolution and adaptability to increased throughput and automation. The simplest reactors consist of opposed parallel plate electrodes in a chamber that can be maintained at low pressure, typically ranging from 0.01 to 1 Torr (1.33–133 Pa).
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Plasma etching has largely replaced wet etching for microcircuit fabrication because of its finer resolution and adaptability to increased throughput and automation. The simplest reactors consist of opposed parallel plate electrodes in a chamber that can be maintained at low pressure, typically ranging from 0.01 to 1 Torr (1.33–133 Pa).
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Applications of Plasma Etching
1990The main driving force behind the rapid development of plasma etching or dry etching as it is often called is today’s IC-fabrication. Practically all pattern transfer steps from the mask to the underlying substrate are performed using dry etching techniques.
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Singular Sheet Etching of Graphene with Oxygen Plasma
Nano-Micro Letters, 2014Haider Al-Mumen, Wen Li, Lixin Dong
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