Results 261 to 270 of about 2,786,485 (335)
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Pulse modulated microwave plasma etching
IEEE International Conference on Plasma Science, 1991Studies have been conducted on the etching characteristics of Si in a microwave plasma etching system having a pulse-modulated source. The experiments were performed at several pulse widths and duty cycles, as well as at cw, to determine how etch rate varied.
C. Grabowski, J. M. Gahl
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1992
Processes and mechanisms of plasma etching in fluorine and chlorine chemistries are shortly reviewed.
Riccardo d’Agostino +1 more
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Processes and mechanisms of plasma etching in fluorine and chlorine chemistries are shortly reviewed.
Riccardo d’Agostino +1 more
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Surface Modification by Plasma Etching and Plasma Patterning
The Journal of Physical Chemistry B, 1997Using radio-frequency glow-discharge plasma techniques, we have prepared surface patterns of various chemical functionalities on a micrometer scale.
Liming Dai +2 more
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Sensors and Actuators A: Physical, 1997
Abstract A new method is presented for microfabricating silicon-based neural probes that are designed for neurobiology research. Such probes provide unique capabilities to record high-resolution signals simultaneously from multiple, precisely defined locations within neural tissue.
David T Kewley +7 more
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Abstract A new method is presented for microfabricating silicon-based neural probes that are designed for neurobiology research. Such probes provide unique capabilities to record high-resolution signals simultaneously from multiple, precisely defined locations within neural tissue.
David T Kewley +7 more
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Plasma Chemistry and Plasma Processing, 1982
The mechanistic and parametric complexity of a plasma etching environment often causes confusion and delays in the development of a suitable plasma etching process. This paper is an attempt to alleviate this problem by discussing some of the important physical and chemical phenomena and, where possible, relating these phenomena to apparatus selection ...
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The mechanistic and parametric complexity of a plasma etching environment often causes confusion and delays in the development of a suitable plasma etching process. This paper is an attempt to alleviate this problem by discussing some of the important physical and chemical phenomena and, where possible, relating these phenomena to apparatus selection ...
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Applied Physics Express, 2019
Plasma-induced damage was reduced by multistep-bias etching that involved a stepwise decrease of the etching bias power (Pbias) and subsequent annealing.
S. Yamada +7 more
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Plasma-induced damage was reduced by multistep-bias etching that involved a stepwise decrease of the etching bias power (Pbias) and subsequent annealing.
S. Yamada +7 more
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1976 International Electron Devices Meeting, 1976
Experimental plasma etching apparatus and methods utilizing BCl 3 etch gas have been developed for the accurate patterning of thin Al and Al-Si alloy metallization as used in integrated circuit fabrication. A two micron linewidth capability has been achieved for the patterning of 0.5 micron thick metallization on three inch diameter wafers with ...
R.G. Poulsen, H. Nentwich, S. Ingrey
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Experimental plasma etching apparatus and methods utilizing BCl 3 etch gas have been developed for the accurate patterning of thin Al and Al-Si alloy metallization as used in integrated circuit fabrication. A two micron linewidth capability has been achieved for the patterning of 0.5 micron thick metallization on three inch diameter wafers with ...
R.G. Poulsen, H. Nentwich, S. Ingrey
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Plasma Etching of Patterned Tungsten
Materials Science Forum, 1993Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size ...
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The 33rd IEEE International Conference on Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts., 2006
Summary form only given. The thinning of the dielectric in the metal (and non-metal) gate stacks and the need to resolve etching on an atomic layer basis present large technological challenges. Conventional plasma processes which utilize reactive ion etching typically do not have sufficient controllability to achieve atomic layer resolution and to ...
A. Agarwal, M.J. Kushner
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Summary form only given. The thinning of the dielectric in the metal (and non-metal) gate stacks and the need to resolve etching on an atomic layer basis present large technological challenges. Conventional plasma processes which utilize reactive ion etching typically do not have sufficient controllability to achieve atomic layer resolution and to ...
A. Agarwal, M.J. Kushner
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