Results 271 to 280 of about 8,509 (311)

On plasma nitriding of steels

Surface and Coatings Technology, 2000
Abstract With the aim of optimizing the nitriding process, experimental studies of the plasma nitriding of four selected steels were carried out, using a d.c. glow discharge. The process parameters were varied systematically. By means of transmission and scanning electron microscopy and X-ray diffraction, the microstructures, including the ...
Berg, M., Budtz-Jørgensen, C.V., Reitz, H., Schweitz, K.O., Chevallier, J., Kringhøj, P., Bøttiger, J.   +6 more
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Radiofrequency (RF) Plasma Nitriding

2016
The usual plasma nitriding is done using glow discharge with the workpiece as cathode at pressures between 100 and 1000 Pa. This procedure leads to bombardment of the surface by energetic ions, therefore the temperature is high.
Hossein Aghajani, Sahand Behrangi
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Mechanism of germanium plasma nitridation

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006
The mechanisms of plasma nitridation of germanium (Ge) and silicon (Si) substrates are discussed based on plasma characteristics and oxynitride film properties. Optical emission spectroscopy (OES) study and x-ray photoelectron spectroscopy were utilized to characterize the plasma and film properties, respectively. In this study, high pressure (1.8Torr)
Takuya Sugawara, Raghavasimhan Sreenivasan, Paul C. McIntyre   +2 more
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Metastable states and nitriding plasmas

Surface and Coatings Technology, 1997
Abstract The results of investigations of slow diffusive effects in pre-breakdown nitrogen discharges, the effects of quenching by impurities, and the influence of surface conditions on metastable-particle–surface interactions are discussed briefly. This work suggests that two distinct neutral metastable species may be active in nitrogen plasmas used
M.J. Baldwin, S.C. Haydon, M.P. Fewell
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Plasma Nitridation of Metal Oxides

Chemistry of Materials, 1996
Three binary nitride materials (TiN, AlN, and GaN) were prepared by reaction of a microwave generated nitrogen/hydrogen plasma with TiO2, Al(OH)3, and Ga2O3, respectively.
Joel D. Houmes, Hans-Conrad zur Loye
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Plasma nitriding of microalloyed steel

Surface and Coatings Technology, 1995
Abstract 3icroalloyed or high strength low alloy (HSLA) steels are carbon-manganese steels containing small amounts of Nb, V or Ti. The excellent mechanical properties of these alloys, particularly high yield strength, usually obviate the need for expensive quench and tempering operations.
F. Mahboubi, M. Samandi, D. Dunne, A. Bloyce, T. Bell   +4 more
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Silicon Nitride Layers Grown by Plasma Enhanced Thermal Nitridation

1981
Silicon nitride layers have been produced by plasma enhanced thermal nitridation of silicon. The growing process has been studied by measuring the layer thickness, ranging from 45 to 70 A, as a function of time and RF power. A depth profile, obtained by Rutherford Back Scattering, showed that the nitrogen to oxygen ratio was about 2.
E. J. Korma, J. Snijder, J. F. Verwey
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Plasma Nitriding Characteristics of Sm2Fe17Nx

Chemistry Letters, 1992
Abstract Nitriding characteristics of Sm2Fe17Nx were studied by applying a plasma technique to Sm2Fe17 in a stream of N2-H2 mixed gas. The reaction took place even at room temperature, but the formation of nitride was limited around the surface region. Some mild heating was required to realize the well-nitriding up to bulk level.
Ken-ichi Machida, Eiji Yamamoto, Kuniaki Murase, Gin-ya Adachi, Masahiro Taniguchi, Ken-ichi Tanaka   +5 more
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The Influence of Plasma Nitriding Time on Mechanical Properties of Plasma Nitriding steel

The aim of this study is to investigate the effect of plasma nitriding time on mechanical and tribological behavior of nitriding coatings produced by plasma-assisted chemical vapor deposition (PACVD). The heat treatment of quench and temper was carried out on hot work AISI H12 (DIN 1.2606) steel samples. A group of samples was plasma nitrided at 470 °C
Shafiei, Seyed Mohammad, Raeisifard, Hamed, Tejareh, Sara Sadat   +2 more
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Plasma deposited aluminum nitride films

Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1986, 1986
Thin films were deposited at room temperature by plasma polymerization of trimethylaluminum and nitrogen or ammonia. These films appeared to consist of amorphous aluminum nitride. Spectroscopic studies of the plasma light emission indicated that the choice of nitrogen or ammonia as the nitrogen-containing reactant has little effect on the plasma ...
R. K. Sadhir, W. A. Byers
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