Results 111 to 120 of about 129,057 (205)

Polarity-Tunable Host Materials and Their Applications in Thermally Activated Delayed Fluorescence Organic Light-Emitting Diodes

open access: yes, 2016
A series of polarity-tunable host materials were developed based on oligocarbazoles and diphenylphosphine oxide, and their polarities can be tuned through increasing distance of acceptor and donor units.
Gaozhan Xie (1658995)   +9 more
core   +1 more source

Lexicon of Polarity Shifting Directions

open access: yes, 2020
This dataset provides information on the shifting direction of polarity shifters. Shifting directions specify whether a polarity shifter can affect only positive polar expressions, only negative ones or shift in both directions.
Ruppenhofer, Josef   +2 more
core   +1 more source

The Role of Ultra‐Thin Passive Films and Organic Adsorbates on Aluminum Chips for a Friction‐Induced Solid‐State Recycling Process

open access: yesAdvanced Engineering Materials, EarlyView.
Despite benefits to storage stability and handleability of aluminum scrap, octadecyl phosphonic acid (ODPA) SAMs reduce the tensile strength of wires produced using friction‐induced recycling. Etching and methyl diphosphonic acid (MDPA) coatings, however, have little effect.
Timothy D. Goller   +3 more
wiley   +1 more source

Cell polarity changes in cancer initiation and progression

open access: yes
International audienceCell polarity, which consists of the morphological, structural, and functional organization of cells along a defined axis, is a feature of healthy cells and tissues. In contrast, abnormal polarity is a hallmark of cancer cells.
Etienne-Manneville, Sandrine   +1 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

open access: yesAdvanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova   +9 more
wiley   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

open access: yesAdvanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite   +5 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Multicellular scale front-to-rear polarity in collective migration

open access: yes, 2019
International audienceCollective cell migration does not only reflect the migration of cells at a similar speed and in the same direction, it also implies the emergence of new properties observed at the level of the cell group.
Capuana, Lavinia   +2 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

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