Results 121 to 130 of about 1,972 (161)
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MRS Proceedings, 1990
AbstractPolycrystalline silicon has found numerous applications in silicon integrated circuits, initially as a MOS gate material, and later for advanced isolation, capacitor electrodes, resistors, interconnect, bipolar emitters and bases, trench refill, doping sources, and the active material in thin film transistors. Integration of these techniques in
J. Ellul, I.D. Calder
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AbstractPolycrystalline silicon has found numerous applications in silicon integrated circuits, initially as a MOS gate material, and later for advanced isolation, capacitor electrodes, resistors, interconnect, bipolar emitters and bases, trench refill, doping sources, and the active material in thin film transistors. Integration of these techniques in
J. Ellul, I.D. Calder
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Effect of polysilicon interface on stress in multistacked polysilicon films
SPIE Proceedings, 1999In this paper, we present a detailed study of the effect of the interface in multi-stacked polysilicon film. In order to investigate microstructural stress characteristics, we fabricated laminated type 2 micrometers thickness of polysilicon test structures such as bridges and rotating beam pairs.
Chang-Auck Choi +4 more
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Wacker Opens Polysilicon Plant
Chemical & Engineering News Archive, 2012Wacker Chemie is starting up a $2.5 billion plant in Charleston, Tenn., that will make polysilicon for the solar panel industry.
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Polysilicon micromachined switch
SPIE Proceedings, 2001Abstract--LPCVD Si02 and polysilicon being used as sacrificial layer and cantilever respectively, a polysilicon micromachined RFswitch has been fabricated. In the process the stress of polysilicon is released to prevent polysilicon membrane from bending.
Zhengyuan Zhang +5 more
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Microstructures of Polysilicon
MRS Proceedings, 1987ABSTRACTSome typical microstructural studies of polycrystalline silicon using transmission electron microscopy (TEM) are described, including the application of this material for assisting TEM investigations themselves. Examples include oxidation and realignment of polysilicon thin films, the structure of polysilicon in EEPROM devices, polysilicon in ...
R. Sinclair +3 more
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Improvement of polysilicon oxide by growing on polished polysilicon film
IEEE Electron Device Letters, 1997This letter first reports the characteristics of polyoxide that was thermally grown on polished polysilicon film. Compared to conventional polyoxide, polyoxide grown on polished polysilicon film exhibits lower leakage current, higher dielectric breakdown field, larger effective barrier height, and higher charge-to-breakdown.
null Tan Fu Lei +4 more
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Polysilicon emitter technology
Proceedings of the Bipolar Circuits and Technology Meeting, 2003The current status of polysilicon emitter technology is reviewed. The advantages of polysilicon emitters in high speed VLSI processes, in particular their high gains and scalability, are highlighted. The physics and metallurgy of the polysilicon/silicon interface is described in detail, and a direct comparison is made with electrical results.
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Laterally Driven Polysilicon Resonant Microstructures
Sensors and Actuators, 1989Interdigitated finger (comb) structures are demonstrated to be effective for electrostatically exciting the resonance of polysilicon microstructures parallel to the plane of the substrate. Linear plates suspended by a folded-cantilever truss and torsional plates suspended by spiral and serpentine springs are fabricated from a 2- mu m-thick phosphorus ...
W.C. Tang, T.-C.H. Nguyen, R.T. Howe
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Novel self-aligned polysilicon-gate MOSFETs with polysilicon source and drain
Solid-State Electronics, 1987Abstract A novel self-aligned technique is described for self-aligning a polysilicon gate in devices with polysilicon source and drain regions. The technique is demonstrated for two types of polysilicon source and drain devices. In one type of device, the polysilicon serves as the source of dopant for diffused source and drain junctions.
M.K. Moravvej-Farshi, M.A. Green
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Plasma etching of polysilicon/nitride/polysilicon sandwich structure for sensor applications
Microelectronic Engineering, 1993Abstract An in situ two step process has been developed for plasma etching of poly-Si/nitride/poly-Si sandwich structures for a surface micromachined tactile sensor. Compared with the one-step process, the two-step process provides the desired etch selectivity, better uniformity and easier control of the process.
Y.X. Li +4 more
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