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2.3 V operation GaAs power MESFET with 68% power-added efficiency

Proceedings of 1994 IEEE GaAs IC Symposium, 2005
A state-of-the-art GaAs power MESFET operating at a drain bias of 2.3 V has been developed using the low-high doped channel structure. The device has 0.8-/spl mu/m gate length and 21-mm gate width. The power performance tested at a 2.3 V drain bias under 900 MHz operation frequency was output power of 31.3-dBm with 11.3-dB gain and 69-percent power ...
null Jong-Lam Lee   +5 more
openaire   +1 more source

Class-B power MMIC amplifiers with 70 percent power-added efficiency

IEEE Transactions on Microwave Theory and Techniques, 1989
C-band monolithic amplifiers using high-efficiency, refractory metal, multifunction-self-aligned-gate (MSAG) processing have been designed, fabricated, and tested. The class-B single-ended amplifier design uses reactive termination for higher order harmonics and achieves a power-added efficiency (PAE) of 70% with associated gain of 8 dB and output ...
I.J. Bahl   +4 more
openaire   +1 more source

Efficient coloring of Wireless Ad Hoc Networks with diminished transmitter power

Proceedings of the International Multiconference on Computer Science and Information Technology, 2010
In our work we present a new approach to the problem of channel assignment in Wireless Ad Hoc Network. We introduce a new algorithm which works in distributed model of computations on Unit Disc Graphs modeling theWireless Ad Hoc Network. The algorithm first modifies the transmitting power of the devices constituting the network (radii of the vertices ...
openaire   +2 more sources

Distributed power control for power-aware energy-efficient routing in ad hoc networks

2002
A BSTRACT In this paper, a distributed power control mecha- nism for ad hoc networks is proposed and investigated. This mechanism, acting at different layers, reduces the power consumption maintaining similar behavior, in terms of delay and throughput, as classic schemes. In the proposed strategy, the generic sender uses an appro- priate power level to
BERGAMO, PIERPAOLO   +4 more
openaire   +2 more sources

Design of a Compact 2.4 GHz Class-F Power Amplifier With High Power Added Efficiency

IETE Journal of Research, 2022
Mohsen Hayati, Andrei Grebennikov
exaly  

A 2–10-GHz Reconfigurable GaN Power Amplifier With Average Power-Added Efficiency of 30% and Output Power of 2 W

IEEE Transactions on Circuits and Systems II: Express Briefs, 2023
Tao Yang, Pei-Ling Chi, Huaizong Shao
exaly  

A 4W V-band MMIC Power Amplifier with 24% Power-Added Efficiency

2021 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2021
Fangjin Guo   +4 more
openaire   +1 more source

Improved DRUS 4H-SiC MESFET With High Power Added Efficiency

Micromachines, 2020
Yintang Yang, Shunwei Zhu, Hujun Jia
exaly  

Improving the Power-Added Efficiency of FET Amplifiers Operating With Varying-Envelope Signals

IEEE Transactions on Microwave Theory and Techniques, 1983
D C Cox, A A M Saleh
exaly  

Class-F Power Amplifier With High Power Added Efficiency Using Bowtie-Shaped Harmonic Control Circuit

IEEE Microwave and Wireless Components Letters, 2015
Akram Sheikhi   +2 more
exaly  

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