Results 1 to 10 of about 12,007 (187)
Design of a High-Power, High-Efficiency GaN Power Amplifier for W-Band Applications [PDF]
MicromachinesThis paper presents a W-band high-efficiency and high-output-power power amplifier (PA) based on a 130 nm AlGaN/GaN-on-SiC HEMT process. The PA is designed to deliver optimal output power and gain performance across the entire W-band.
Shuai Liu +3 more
doaj +2 more sources
2W HBT Power Amplifier Module with Dual Second Harmonic Suppression Technique [PDF]
SensorsThis paper presents a high-power heterojunction bipolar transistor (HBT) power amplifier (PA) module designed for GSM/EDGE applications. The proposed HBT PA employs a differential output stage that delivers high output power at a low supply voltage.
Chul-Woo Byeon, Joon-Hyung Kim
doaj +2 more sources
A 6–18 GHz High-Efficiency GaN Power Amplifier Using Transistor Stacking and Reactive Matching [PDF]
MicromachinesThis article presents the design and implementation of a 6–18 GHz GaN monolithic microwave integrated circuit (MMIC) power amplifier (PA). A two-stage cascaded reactive matching network structure based on transistor stacking technology is employed to ...
Cetian Wang +6 more
doaj +2 more sources
High-Efficiency 200-GHz Neutralized Common-Base Power Amplifiers in 250-nm InP HBT
IEEE Journal of Microwaves, 2023 The analysis, design, and measurement of two Indium Phosphide (InP) heterojunction bipolar transistor (HBT) power amplifier (PA) designs are presented at G-band with record efficiency.
Jeff Shih-Chieh Chien +2 more
doaj +1 more source
IEEE Access, 2021 This paper presents a fully integrated linear power amplifier (PA) in a 65-nm CMOS process for mm-wave 5G applications. The proposed linear PA employs a compact symmetrical 4-way parallel–parallel power combiner with a third-order intermodulation ...
Hyunjin Ahn +3 more
doaj +1 more source
IET Circuits, Devices and Systems, 2023 A new approach to increasing the power-added efficiency (PAE) of a class E power amplifier (PA) is proposed in this paper. The PA operates at a 5 GHz frequency and a reactance compensation technique is utilized to maximize the bandwidth at the operating ...
Hemad Heidari Jobaneh
doaj +1 more source
Micromachines, 2021 An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper.
Hujun Jia +4 more
doaj +1 more source
An mm-Wave Multi-Mode Asymmetric Power Amplifier With Back-off Efficiency Enhancement
IEEE Access, 2021 This paper presents a multi-mode asymmetric power amplifier (MMA-PA) with back-off efficiency enhanced. The back-off efficiency is improved without a lossy impedance inverter or signal separator which is used in conventional Doherty or outphasing ...
Seungwon Park +2 more
doaj +1 more source
A Comparative Analysis of Doherty and Outphasing MMIC GaN Power Amplifiers for 5G Applications
Micromachines, 2023 A comparison between a fully integrated Doherty power amplifier (DPA) and outphasing power amplifier (OPA) for fifth Generation (5G) wireless communications is presented in this paper. Both amplifiers are integrated using pHEMT transistors from the OMMIC’
Victoria Díez-Acereda +3 more
doaj +1 more source
High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management [PDF]
, 2003 High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors (HEBTs) have been demonstrated. The large signal performance of the HEBTs is characterized. Output power of 0.25 W with power added efficiency (PAE) of 63.5%
Hsu, CC +4 more
core +1 more source