Results 41 to 50 of about 12,007 (187)

Demonstration of a switchless Class E/Fodd dual-band power amplifier [PDF]

, 2002
A 250 W dual-band power amplifier belonging to the Class E/F switching amplifier family is presented. The amplifier operates in the 7 MHz and 10 MHz HAM bands, achieving 16 dB and 15 d B gain with power added efficiencies (PAE) of 92% and 87% in those ...
Bohn, Florian, Hajimiri, Ali, Kee, Scott
core  

Functional Metal Complexes for Solar–Light‐Driven Energy Conversion

Advanced Materials, EarlyView.
This review provides an exhaustive summary of the recent advancements of functional metal complexes in solar‐to‐electrical, ‐chemical, and ‐thermal energy conversion, comprising material categories, design strategies, underlying principles of operation, and identified improvement of performances.
Yanyan Qin, Dou Luo, Miao Zhang, Wai‐Yeung Wong   +3 more
wiley   +1 more source

6‐GHz‐to‐18‐GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance

ETRI Journal, 2017
A 6‐GHz‐to‐18‐GHz monolithic nonuniform distributed power amplifier has been designed using the load modulation of increased series gate capacitance. This amplifier was implemented using a 0.25‐μm AlGaN/GaN HEMT process on a SiC substrate.
Dong‐Hwan Shin, In‐Bok Yom, Dong‐Wook Kim   +2 more
doaj   +1 more source

An Improved 4H-SiC MESFET with a Partially Low Doped Channel

Micromachines, 2019
An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS ...
Hujun Jia, Yibo Tong, Tao Li, Shunwei Zhu, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang   +7 more
doaj   +1 more source

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

IEEE Journal of the Electron Devices Society, 2021
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is
Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Yue Hao   +12 more
doaj   +1 more source

The Class-E/F Family of ZVS Switching Amplifiers [PDF]

, 2003
A new family of switching amplifiers, each member having some of the features of both class E and inverse F, is introduced. These class-E/F amplifiers have class-E features such as incorporation of the transistor parasitic capacitance into the circuit ...
Aoki, Ichiro, Hajimiri, Ali, Kee, Scott D., Rutledge, David   +3 more
core   +1 more source

Nanomedicine Meets Immunotherapy: Advancing Adoptive Cell Therapy with Nanoparticles in the Treatment of Cancer with Sustainability Perspectives

Advanced Science, EarlyView.
This review surveys nanoparticle‐based strategies to enhance adoptive cell therapy, particularly CAR‐T cell approaches, in solid tumor treatment. It describes how nanoparticles can improve tumor immunogenicity and T‐cell infiltration while reducing toxicity, and how they enable in vivo CAR‐T cell generation.
Erica Frostegård, Tatiana Bobrova, Amalie Leinebø, Thibault Leray, Shayamita Ghosh, Lorena García‐Hevia, Chiara Puccinelli, Lorenzo Riccio, Jacopo Sorani, Davide Bonifazi, Julien Caumartin, Emmanuel Donnadieu, Florence Gazeau, Roland Hischier, Else Marit Inderberg, Mónica L. Fanarraga, Maria Loustau, Bernd Nowack, Sébastien Wälchli, Cécilia Ménard‐Moyon   +19 more
wiley   +1 more source

Distributed active transformer - a new power-combining andimpedance-transformation technique [PDF]

, 2002
In this paper, we compare the performance of the newly introduced distributed active transformer (DAT) structure to that of conventional on-chip impedance-transformations methods. Their fundamental power-efficiency limitations in the design of high-power
Aoki, Ichiro, Hajimiri, Ali, Kee, Scott D., Rutledge, David B.   +3 more
core   +1 more source

Nanomaterial‐Mediated Near‐Infrared Photothermal Neuromodulation for Neurologic Disorders

Advanced NanoBiomed Research, EarlyView.
This review summarizes how near‐infrared light activates photothermal nanomaterials to enable noninvasive neuromodulation with high spatiotemporal precision. It elucidates the underlying mechanisms, explores targeted therapeutic applications for neurological disorders, discusses integration with optogenetics and biosensors, and addresses future ...
Ting‐Ting Zeng, Yu‐Ge Wang, Ya‐Bing Zhang, Yuan‐Xin Bai, Si‐Tong Lin, Ting‐Ting Zhu, Yan‐Bo Zhou, Wei‐Tong Pan, Pan‐Miao Liu, Jian‐Jun Yang   +9 more
wiley   +1 more source

High Efficient CMOS Class-E Power Amplifier with a New Output Power Control Scheme [PDF]

Journal of Electrical and Electronics Engineering, 2013
This paper presents the design of a novel RF power amplifier (PA) with a new output power control scheme suitable for RF-ICs and portable systems. Employing a class-E amplifier as a drivertogether with soft-switching property of the main power stage ...
MESHKIN Reza, MAGHSOODI Mahrokh, SABERKARI Alireza, NIABOLI-GUILANI Mohammad   +3 more
doaj