Results 51 to 60 of about 9,251,093 (173)

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

IEEE Journal of the Electron Devices Society, 2021
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is
Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Yue Hao   +12 more
doaj   +1 more source

Weibull Variational Autoencoder for Remaining Useful Life Prediction

Quality and Reliability Engineering International, EarlyView.
ABSTRACT Remaining useful life (RUL) prediction is a critical technology for preventing unexpected failures and reducing maintenance costs in modern industrial systems. However, traditional model‐based approaches are limited by the need for explicit mathematical modeling of degradation mechanisms, while data‐driven methods often require large‐scale ...
JunWoo Yu, Yoojin Jang, Kwanghui Shin, Jinsoo Jeong, Yong Soo Kim   +4 more
wiley   +1 more source

The Persistent Fragmentation of Gulf Foreign Aid: Bilateralism and the Limits of Regional Humanitarian Coordination

Global Policy, EarlyView.
ABSTRACT This paper examines why Gulf foreign aid has remained predominantly bilateral and fragmented since its emergence in the 1960s, despite the establishment of regional institutions, recurring regional crises and repeated calls for greater coordination.
Khalid Almezaini
wiley   +1 more source

Broadband GaN Class-E Power Amplifier for Load Modulated Delta Sigma and 5G Transmitter Applications

IEEE Access, 2018
The paper presents a design of a broadband high-efficiency class-E power amplifier (PA) for the advanced efficiency enhancement architectures applications.
Tushar Sharma, Pouya Aflaki, Mohamed Helaoui, Fadhel M. Ghannouchi   +3 more
doaj   +1 more source

MotionPyramid: Controllable Motion Synthesis via Stylized Phase Manifolds

Computer Graphics Forum, EarlyView.
Abstract We introduce stylized phase manifolds—a compact, interpretable latent representation that disentangles motion content (e.g. “jumping”, “walking”), the temporal structure (e.g. motion cycle frequency, gait timing), and style (i.e. how the motion is performed). Learned in an unsupervised manner and inherently low‐dimensional, the manifold offers
Jingyuan Li, Peizhuo Li, Andreas Aristidou, Olga Sorkine‐Hornung   +3 more
wiley   +1 more source

0.2-μm InP/GaAsSb DHBT power performance with 10 mW/μm² and 25% PAE at 94 GHz

, 2014
International audienceWe report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of 0.20 × 9.5 μm2. Biased for highest power added efficiency (PAE), an
Frijlink, Peter, Maher, Hassan, Rocchi, Marc, Roelens, Yannick, Zaknoune, Mohammed, Okada, Etienne, Ducatteau, Damien, Mairiaux, Estelle   +7 more
core   +1 more source

GaN Power Amplifier with DPD for Enhanced Spectral Integrity in 2.3–2.5 GHz Wireless Systems

Technologies
The increasing need for high-data-rate wireless applications in 5G and IoT networks requires sophisticated power amplifier (PA) designs in the sub-6 GHz spectrum.
Mfonobong Uko
doaj   +1 more source

Resilience, Sorority, and Emotional Ambivalence in Women's Academic Leadership

Gender, Work &Organization, EarlyView.
ABSTRACT This study analyzes the gender dynamics experienced by women in senior management positions in Brazilian Federal Higher Education Institutions and, from an intersectional perspective, how these dynamics shape the identity construction of women in these roles. Drawing on Interpretative Phenomenological Analysis (IPA), the study investigates the
Lady Day Pereira de Souza, Mariane Lemos Lourenço   +1 more
wiley   +1 more source

High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management [PDF]

, 2003
High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors (HEBTs) have been demonstrated. The large signal performance of the HEBTs is characterized. Output power of 0.25 W with power added efficiency (PAE) of 63.5%
Wang, XQ, Yang, YF, Yang, ES, Yan, BP, Hsu, CC   +4 more
core   +1 more source

Rethinking informal circularity through metanarratives: Tensions, insights and directions for management research

International Journal of Management Reviews, EarlyView.
Abstract This study explores the intersection of the informal and circular economies and its implications for business, management and organization (BMO) scholarship and practice. Informal circularity, practices of collecting, reusing, repairing, recycling and repurposing materials outside formal economic, legal and regulatory arrangements, constitutes
Tulin Dzhengiz, Ling Li, Vildan Tasli Karabulut, Maryline Kiptoo   +3 more
wiley   +1 more source