Results 71 to 80 of about 9,251,093 (173)

Design Of A Doherty Power Amplifier For GSM Systems

Tikrit Journal of Engineering Sciences, 2013
This paper presents the design and analysis of Doherty power amplifier. The Doherty amplifier is used in  a base station for mobile system because of its high efficiency.
Saad Wasmi Osman
doaj  

A 28GHz, Switched-Cascode, Class E Amplifier in 22nm CMOS FDSOI Technology

IEEE Journal of Microwaves
Using the stacking technique in CMOS technology for Power Amplifiers (PAs), allows the use of a higher supply voltage. This facilitates achieving a higher voltage swing, and delivering more output power while maintaining a high efficiency.
Nourhan Elsayed, Saeedeh Makhsuci, Mihai Sanduleanu   +2 more
doaj   +1 more source

Seamless Integration of Active Antenna With Improved Power Efficiency

IEEE Access, 2020
Loss reduction to improve the power efficiency in active integrated antenna (AIA) is a key design drive. This paper first analyzes the loss mechanism in a convention AIA structure. A new integration scheme of a GaN power amplifier (PA) transistor with an
Yunlong Lu, Qing Liu, Yi Wang, Peter Gardner, Wang He, Yi Chen, Jifu Huang, Taijun Liu   +7 more
doaj   +1 more source

Toward Pore‐Engineered 3D‐Printed Materials for Sorption Water Harvesting, Interfacial Evaporation, and Radiative Cooling

Advanced Materials, Volume 38, Issue 61, 2 November 2026.
Water harvesting, radiative cooling, and interfacial solar evaporation are fundamentally governed by coupled heat, mass, and light transport processes. These processes are mediated by pore architecture, including pore size, connectivity, and hierarchical organization.
Dejan J. Trajkovski, Higgins M. Wilson, Abdallah Y. M. Ali, Jiaxing Xu, Ruzhu Wang, Primož Poredoš   +5 more
wiley   +1 more source

GaN HEMT MMIC Doherty Power Amplifier With High Gain and High PAE

, 2017
This paper presents an approach to maximize the gain and power-added efficiency (PAE) of a Doherty power amplifier (PA) using a 0.25 mu m GaN pHEMT. The conventional carrier PA has an input matching for the R-OPT load and does not deliver the 3 dB higher
Jee, S, Lee, J, Park, B, Kim, S, Kim, B, Park, Y, Kim, CH   +6 more
core   +1 more source

High-efficiency watt-level E-band GaN power amplifier with a compact low-loss combiner

, 2023
4244This paper presents a 3-stage E-band (71–83 GHz) power amplifier (PA) that employs a compact low-loss distributed matching network (DMN), which performs both the output matching and power combining.
Cimbili, Bharath Kumar, Bao, Mingquan, Quay, Rüdiger, Raay, Friedbert van, Wagner, Sandrine, Friesicke, Christian, Cimbili, Bharath   +6 more
core   +1 more source

Design of Highly Linear Broadband Continuous Mode GaN MMIC Power Amplifiers for 5G

IEEE Access, 2019
In this paper, we present a design approach for broadband harmonic-tuned monolithic microwave integrated circuit (MMIC) power amplifiers (PAs). Two harmonic matching networks are proposed for the realization of continuous class-B and class-F modes in an ...
Gholamreza Nikandish, Robert Bogdan Staszewski, Anding Zhu   +2 more
doaj   +1 more source

Zdhhc14 promotes pyroptosis in the dorsal root ganglion of oxaliplatin‐induced peripheral neuropathy mice by enhancing GBP5 palmitoylation and suppressing its ubiquitination

Clinical and Translational Medicine, Volume 16, Issue 11, November 2026.
Oxaliplatin‐induced up‐regulation of Zdhhc14 enhances GBP5 stability through palmitoylation‐dependent inhibition of ubiquitin–proteasome degradation, thereby contributing to the development of peripheral neuropathy. Zdhhc14 is identified as a key palmitoyltransferase up‐regulated in oxaliplatin‐induced peripheral neuropathy.
Xiao Jiang, Wanqiu Li, Yanzhuo Liu, Wei Song, Xuedan Zheng, Liu Tang   +5 more
wiley   +1 more source

X-band load-insensitive high-efficiency power amplifier MMIC using asymmetric matching network

Dianzi Jishu Yingyong
To address antenna impedance variations, a high-efficiency and load-insensitive power amplifier operating in the 8~12 GHz band is designed using 0.25 μm GaN HEMT technology.
Dong Yifang, Liu Junfeng, Shao Yuwei, Yu Xuming, Guo Runnan, Wang Youyang, Gu Wenhua   +6 more
doaj   +1 more source

A V-Band Doherty Power Amplifier Based on Voltage Combination and Balance Compensation Marchand Balun

IEEE Access, 2018
This paper presents a $V$ -band Doherty power amplifier (PA) which is implemented in a standard 65-nm CMOS technology. The voltage combination technique is used to realize the millimeter-wave Doherty PA without the $\lambda $ /4 transmission lines.
Dong Chen, Chenxi Zhao, Zhengdong Jiang, Kam Man Shum, Quan Xue, Kai Kang   +5 more
doaj   +1 more source