Results 81 to 90 of about 12,007 (187)
Automodification of N‐terminal serine residues facilitates PARP2 release from DNA
PARP2 is involved in detecting DNA damage and its N‐terminal role is largely unknown. Based on biochemical and biophysical data, our findings suggest that in the presence of HPF1, N‐terminal serine 8 and 73 are enriched in auto‐ADP‐ribosylation. Our results provide insight into the mechanistic role of PARP2 N‐terminus in the PARylation‐dependent ...
Saurabh Singh Dhakar +6 more
wiley +1 more source
A 28GHz, Switched-Cascode, Class E Amplifier in 22nm CMOS FDSOI Technology
Using the stacking technique in CMOS technology for Power Amplifiers (PAs), allows the use of a higher supply voltage. This facilitates achieving a higher voltage swing, and delivering more output power while maintaining a high efficiency.
Nourhan Elsayed +2 more
doaj +1 more source
High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation
We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a low leakage current below 10 ...
Kathia Harrouche +3 more
doaj +1 more source
Modeling of a Point Absorber for Energy Conversion in Italian Seas [PDF]
In the present paper, we investigate the feasibility of wave electricity production in Italian seas by the deployment of the Seabased wave energy converter (WEC).
A. Antonini +4 more
core +1 more source
State Integration and Violence at the Margins: The Logic of Police Raids in Rio de Janeiro's Favelas
ABSTRACT This paper investigates police raids in Rio de Janeiro's favelas through a property rights framework, exploring their organisational structure, motivations and implications. Using data from police reports, academic studies, NGOs and news sources, it examines why and how the state intervenes in these contested spaces.
Joseph Bouchard
wiley +1 more source
168-195 GHz Power Amplifier With Output Power Larger Than 18 dBm in BiCMOS Technology
This paper presents a 4-way combined G-band power amplifier (PA) fabricated with a 130-nm SiGe BiCMOS process. First, a single-ended PA based on the cascode topology (CT) is designed at 185 GHz, which consists of three stages to get an overall gain and ...
Abdul Ali +5 more
doaj +1 more source
5 Watt GaN HEMT Power Amplifier for LTE [PDF]
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier.
Collado, A. +3 more
core
A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier [PDF]
Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process.
Aoki, Ichiro +8 more
core +1 more source
Abstract This study explores the intersection of the informal and circular economies and its implications for business, management and organization (BMO) scholarship and practice. Informal circularity, practices of collecting, reusing, repairing, recycling and repurposing materials outside formal economic, legal and regulatory arrangements, constitutes
Tulin Dzhengiz +3 more
wiley +1 more source
A 2.4-GHz, 2.2-W, 2-V fully-integrated CMOS circular-geometry active-transformer power amplifier [PDF]
A 2.4-GHz, 2.2-W, 2-V fully integrated circular geometry power amplifier with 50 Ω input and output matching is fabricated using 2.5V, 0.35 pm CMOS transistors. It can also produce 450mW using a 1V supply. Harmonic suppression is 64dB or better.
Aoki, Ichiro +3 more
core

