Results 171 to 180 of about 5,053,159 (301)
Design of Ultra-Wideband Doherty Power Amplifier Using a Modified Combiner Integrated with Complex Combining Impedance. [PDF]
Chen J, Liu Z, Dong T, Shi W.
europepmc +1 more source
Dirac‐Source Linear X‐Ray Detection Diode
Monolayer graphene imparts near linear current‐voltage behavior to a perovskite X‐ray detection diode, contrasting with conventional diode‐like responses. Exploiting graphene's Dirac dispersion and a Schottky‐like back‐to‐back junction, the device achieves six‐orders‐of‐magnitude dark current suppression while retaining linearity over 200 V, enabling ...
Babar Shabbir +8 more
wiley +1 more source
Sub-2W tunable laser based on silicon photonics power amplifier. [PDF]
Singh N +11 more
europepmc +1 more source
A High-Relative-Bandwidth Doherty Power Amplifier with Modified Load Modulation Network for Wireless Communications. [PDF]
Zhu H, Zhang Z, Gu C, Xuan X.
europepmc +1 more source
This study advances SafeWax, a bio‐inspired, fatty‐acids‐based superhydrophobic coating, by identifying an agriculturally compliant solvent and revealing how solvent‐controlled Fatty acid crystallization governs the coating's microscopic structure and performance.
Niv Ben‐Arie +13 more
wiley +1 more source
2W HBT Power Amplifier Module with Dual Second Harmonic Suppression Technique. [PDF]
Byeon CW, Kim JH.
europepmc +1 more source
Support Vector Machine-Based Model for 2.5-5.2 GHz CMOS Power Amplifier. [PDF]
Zhou S, Yang C, Wang J.
europepmc +1 more source
A hybrid additive manufacturing platform integrates direct droplet writing of metallic composite with VAT photopolymerization to fabricate architected soft magnetic composites. This approach enables microscale patterning of high‐viscosity materials for programmable actuators, adaptive fluidic devices, and switchable adhesives, offering tunable ...
Yeowon Yoon +4 more
wiley +1 more source
A 3.2-3.6 GHz GaN Doherty Power Amplifier Module Based on a Compact Low-Loss Combiner. [PDF]
Wang X +6 more
europepmc +1 more source
Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses. [PDF]
Zhao J +5 more
europepmc +1 more source

