Improved MRD 4H-SiC MESFET with High Power Added Efficiency [PDF]
An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology ...
Shunwei Zhu +6 more
doaj +8 more sources
An Improved UU-MESFET with High Power Added Efficiency [PDF]
An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor ...
Hujun Jia, Mei Hu, Shunwei Zhu
doaj +6 more sources
Improved DRUS 4H-SiC MESFET with High Power Added Efficiency [PDF]
A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper.
Hujun Jia +7 more
doaj +6 more sources
An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency [PDF]
An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper.
Hujun Jia +4 more
doaj +2 more sources
Review of Efficiency CMOS Class AB Power Amplifier Topology in Gigahertz Frequencies [PDF]
This paper reviewed the efficiency of CMOS class AB power amplifier topology especially in gigahertz frequencies. CMOS class AB power amplifier is a compromise between class A and class B in terms of linearity and efficiency between 50% to 78.5%. However,
Rohana Sapawi
doaj +2 more sources
DEA Efficiency for the Determination of the Electric Power Distribution Added Value
The application of data-envelopment analysis methodology is formulated as a tool to determine the distribution added value required in the tariff fixation processes of electrical power distribution that use the concept of model firm as a regulatory basis.
Sanhueza Hormazabal, Raul Edgardo +2 more
openaire +6 more sources
A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band
In this letter, AlGaN/GaN HEMTs with tall-gate-stem structures were realized to improve the power performance of Ka-band devices, and a film thinning process is adopted in the fabrication process to reduce the parasitic capacitance caused by the thick ...
Ping-Hsun Lee +6 more
doaj +1 more source
On the power efficiency of sensory and ad-hoc wireless networks [PDF]
We consider the power efficiency of a communications channel, i.e., the maximum bit rate that can be achieved per unit power (energy rate). For additive white Gaussian noise (AWGN) channels, it is well known that power efficiency is attained in the low signal-to-noise ratio (SNR) regime where capacity is proportional to the transmit power.
Dana, Amir F., Hassibi, Babak
openaire +5 more sources
Injection Locking in Switching Power Amplifiers
In this work, injection locking in switching power amplifiers (PAs) is studied. Traditionally, injection-locked PAs (ILPAs) have supported phase modulation, with injection locking used primarily to improve the power-added efficiency by reducing the power
Amit Kumar Mishra +2 more
doaj +1 more source
Design of miniaturized high efficiency power amplifier based on harmonic suppression
To overcome conventional VHF power amplifiers′ shortcomings of bulky size, low efficiency, and EM interferences due to output harmonics, a miniaturized, high power and high efficiency power amplifier working in VHF band is designed by using lumped ...
Liu Tianyun, Liu Shaobin
doaj +1 more source

