Results 21 to 30 of about 9,446,943 (295)
A new approach to increasing the power-added efficiency (PAE) of a class E power amplifier (PA) is proposed in this paper. The PA operates at a 5 GHz frequency and a reactance compensation technique is utilized to maximize the bandwidth at the operating ...
Hemad Heidari Jobaneh
doaj +1 more source
Numerical prediction method of shafting power characteristics of free self-propelled ship in waves
ObjectiveTo investigate ship power characteristics and the difference between the towing model and self-propulsion model for ship motion response in waves, numerical simulations of ship self-propulsion performance in waves are carried out. MethodsIn this
Jiawei YU +4 more
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Power amplifier is one of the main components in the RF transmitters. It must provide various stringent features that can lead to complicating the design.
M. Soruri, S. M. Razavi, M. Forouzanfar
doaj
Design of a Reconfigurable Dual Mode / Dual Band Power Amplifier for Mobile Communication Systems [PDF]
This paper introduces an alternative design approach of a reconfigurable dual mode/dual band medium power amplifier for modern mobile communication systems.
Zaidoun R. Abd +2 more
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Research and Design of an X-Band UHF Power Amplifier
Introduction. A method for designing power amplifiers for use in the transmitting channels of X-band transceiver modules is investigated. The design process was aimed at optimizing the relationship between the basic amplifier characteristics, including ...
Nguyen Xuan Luong +3 more
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Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer
A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design ...
Shunwei Zhu +7 more
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Electronic devices usually operate in a variable loading condition and the power transfer efficiency of the accompanying wireless power transfer (WPT) method should be optimizable to a variable load.
Jung-Hoon Cho +2 more
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S.429-432A millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 135 and 155 GHz is presented. The D-band power amplifier, realized in a 100 nm gate length metamorphic high electron mobility transistor ...
Koch, S. +6 more
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A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied.
Hujun Jia +4 more
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Efficiency versus linearity trade-off in an S-band class-AB power amplifier [PDF]
This paper presents a design strategy to simultaneously optimize the efficiency and linearity of a single-device class-AB power amplifier, given minimum output power and gain requirements.
Camarchia, V. +5 more
core +1 more source

