Results 41 to 50 of about 9,446,943 (295)
Power added efficiency optimisation of microwave transistor amplifier
Electronics Letters, 1989 A high-efficiency microwave amplifier design routine which optimises the power added efficiency of any class (A, AB, B, C, D, E,. . .) of amplifier is reported. It has the advantage of a reduced variable number, and easy synthesis for input-output circuits.
A. Algani, H. Wang, A. Konczykowska
openaire +1 more source
Organoids in pediatric cancer research
FEBS Letters, EarlyView.Organoid technology has revolutionized cancer research, yet its application in pediatric oncology remains limited. Recent advances have enabled the development of pediatric tumor organoids, offering new insights into disease biology, treatment response, and interactions with the tumor microenvironment.
Carla Ríos Arceo, Jarno Drost
wiley +1 more source
Design of a Doherty Power Amplifier for GSM Systems
Tikrit Journal of Engineering Sciences, 2011 This paper presents the design and analysis of Doherty power amplifier. The Doherty amplifier is used in a base station for mobile system because of its high efficiency.
Saad Wasmi Osman Luhaib
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A D-Band Power Amplifier with 12dBm P1dB, 10% Power Added Efficiency in InP-DHBT Technology
, 2022 This paper presents a D-band power amplifier (PA) using 800 nm InP-DHBT technology. It consists of a driver stage with a 2-way combined cascade unit power cell. Measurements show 12 dB small signal gain.
Heinrich, W. +15 more
core +1 more source
FEBS Letters, EarlyView.We present robust protocols for the preparation of supported lipid bilayers (SLBs) incorporating either Salmonella smooth LPS or outer membrane vesicles (OMVs). We use a combination of quartz crystal microbalance with dissipation (QCM‐D) and fluorescence microscopy to both characterize the SLBs of various compositions and to probe their interactions ...
Hudson P. Pace +6 more
wiley +1 more source
High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation
IEEE Journal of the Electron Devices Society, 2019 We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a low leakage current below 10 ...
Kathia Harrouche +3 more
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High-Efficiency 200-GHz Neutralized Common-Base Power Amplifiers in 250-nm InP HBT
IEEE Journal of Microwaves, 2023 The analysis, design, and measurement of two Indium Phosphide (InP) heterojunction bipolar transistor (HBT) power amplifier (PA) designs are presented at G-band with record efficiency.
Jeff Shih-Chieh Chien +2 more
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Design and analysis strategies for robust microbiome ageing research
FEBS Letters, EarlyView.The gut microbiome changes with age and associates with age‐related morbidity and mortality, establishing it as a potential biomarker and intervention target for ageing. Realising this potential requires methodological rigour, yet distinguishing biological signals from methodological artefacts remains challenging across cohorts. This review provides an
Mark Olenik +5 more
wiley +1 more source
Power Added Efficiency Model for Mesfet Class E Power Amplifier Using Jackknife Resampling [PDF]
, 2013 There are several types of amplifier classes, and this includes the class E amplifier. The class E can achieve its efficiency up to 100%. This paper thus aims on getting the best model in estimating the power added efficiency of Class E power amplifier ...
Fouziah Md. Yassin +3 more
core +1 more source
GaN Power Amplifier with DPD for Enhanced Spectral Integrity in 2.3–2.5 GHz Wireless Systems
TechnologiesThe increasing need for high-data-rate wireless applications in 5G and IoT networks requires sophisticated power amplifier (PA) designs in the sub-6 GHz spectrum.
Mfonobong Uko
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