Results 61 to 70 of about 9,446,943 (295)
3.3V OPERATION GAAS POWER MESFETS WITH 65-PERCENT POWER-ADDED EFFICIENCY FOR HAND-HELD TELEPHONES
, 1994 High-low doped metal semiconductor field effect transistors (MESFETs) operating at a drain bias of 3.3V have been developed. The MESFETs with 0.6mum gate length and 12mm gate width show a maximum drain current density of 310mA/mm and a uniform ...
MUN, JK +13 more
core +1 more source
Emerging experimental and computational methods for studying redox‐regulated structural transitions
FEBS Letters, EarlyView.Redox reactions can reshape proteins and alter how they behave in cells, with important consequences for health and disease. This review explores emerging experimental and computational approaches for discovering these redox‐sensitive protein switches, revealing their structural effects, and predicting their behavior, opening new opportunities to ...
Tasneem Rass +2 more
wiley +1 more source
A 28GHz, Switched-Cascode, Class E Amplifier in 22nm CMOS FDSOI Technology
IEEE Journal of MicrowavesUsing the stacking technique in CMOS technology for Power Amplifiers (PAs), allows the use of a higher supply voltage. This facilitates achieving a higher voltage swing, and delivering more output power while maintaining a high efficiency.
Nourhan Elsayed +2 more
doaj +1 more source
Fuel as secondary refrigerant on LPG fuelled vehicle: A thermodynamics analysis
Journal of Mechanical Engineering and Sciences, 2019 In LPG-fueled vehicles, there is a potential cooling from LPG evaporation in the fuel line. Cooling power is obtained without reducing the caloric value of the fuel supplied to the engine. Thus, LPG functions like a refrigerant before it is burned in the
Muji Setiyo, B. Waluyo
doaj +1 more source
Filtering Power Amplifier With Up to 4th Harmonic Suppression
IEEE Access, 2020 Unlike conventional conception that power amplifier and filter are regarded as two separate components and designed separately, this paper presents a high efficiency power amplifier with filtering capability, which is called filtering power amplifier ...
Xiaobo Qi, Fei Xiao
doaj +1 more source
Synergistic perspectives—How single‐molecule biophysics complement biochemical understanding
FEBS Letters, EarlyView.In this review, we discuss how ensemble biochemistry and single‐molecule approaches are complementary, outline commonly used single‐molecule techniques, and illustrate their relevance through two representative case studies: chromatin organization by SMC complexes and pathway choice during DNA double‐strand break repair.
Sara De Bragança +2 more
wiley +1 more source
FEBS Letters, EarlyView.Encapsulins are protein nanocompartments that play an important role in iron storage. In the Myxococcus xanthus encapsulin system, two cargo proteins called EncB and EncC contribute to iron mineralization. Here, we show that EncB and EncC generate iron‐containing minerals with distinct chemical compositions, suggesting that the composition of stored ...
Harry B. McDowell +2 more
wiley +1 more source
A Transformer-Based Dual-Mode Ka-Band CMOS Power Amplifier With Enhanced Back-Off Efficiency
IEEE Journal of MicrowavesThis paper presents the differential-to-single-ended load-modulated (DISEL)-power amplifier, a transformer-based dual-mode Ka-band CMOS power amplifier designed to enhance power-added efficiency (PAE) under output back-off conditions while maintaining ...
Hyunsoo Kim, Jaeyong Lee, Changkun Park
doaj +1 more source
The ubiquitin system in normal and infected germinal center B cells
FEBS Letters, EarlyView.The ubiquitin system plays a central role in germinal center (GC) B cells, influencing differentiation to long‐lived memory B cells. Oncogenic gammaherpesviruses gain access to memory B cells by establishing latency in GC B cells. Mapping ubiquitin mechanisms in normal and infected GC B cells will define specific molecular circuits in B cells germane ...
Destiny Davis +2 more
wiley +1 more source
2W HBT Power Amplifier Module with Dual Second Harmonic Suppression Technique
SensorsThis paper presents a high-power heterojunction bipolar transistor (HBT) power amplifier (PA) module designed for GSM/EDGE applications. The proposed HBT PA employs a differential output stage that delivers high output power at a low supply voltage.
Chul-Woo Byeon, Joon-Hyung Kim
doaj +1 more source