Results 11 to 20 of about 1,787,106 (304)
The Journal of Engineering, 2015 Integration of a class-E power amplifier (PA) and a thin-film bulk acoustic wave resonator (FBAR) filter is shown to provide high power added efficiency in addition to superior out-of-band spectrum suppression.
Kyle Holzer, Jeffrey S. Walling
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Power Efficient Connected Topologies in Ad Hoc Networks
10th IEEE Symposium on Computers and Communications (ISCC'05), 2005 Power efficient topologies in an ad-hoc network can reduce battery usage and increase the lifetime of a network. Topology control algorithms including a local minimum spanning tree (LMST), distributed relative neighbourhood graph (DRNG) and K-Neigh graphs are computed by using the location or the distance information of the network nodes.
G. Srivastava +2 more
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Power added efficiency optimisation of microwave transistor amplifier
Electronics Letters, 1989 A high-efficiency microwave amplifier design routine which optimises the power added efficiency of any class (A, AB, B, C, D, E,. . .) of amplifier is reported. It has the advantage of a reduced variable number, and easy synthesis for input-output circuits.
A. Algani, H. Wang, A. Konczykowska
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Issues in the Blandford-Znajek Process for GRB Inner Engine [PDF]
, 1999 Several issues regarding the Blandford-Znajek process are discussed to demonstrate that it can be an effective mechanism for powering the gamma ray bursts.
Bicak J. +9 more
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A 28-GHz Cascode Inverse Class-D Power Amplifier Utilizing Pulse Injection in 22-nm FDSOI
IEEE Access, 2020 Current Mode Class-D (CMCD) Power Amplifiers are of particular interest in outphasing transmitters or Doherty configuration. This is because the output capacitance can be absorbed in the RLC output matching network and 100% theoretical efficiency.
Nourhan Elsayed +3 more
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High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz [PDF]
2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020 We report on breakthrough power-added-efficiency (PAE) Q-band performances using a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows both superior performance and robustness for the thinner barrier layer attributed to the reduced mechanical strain into the heterostructure.
Harrouche, Kathia +3 more
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Modeling and performance of a 100-element pHEMT grid amplifier [PDF]
, 1996 A 100-element hybrid grid amplifier has been fabricated, The active devices in the grid are custom-made pseudomorphic high electron mobility transistor (pHEMT) differential-pair chips.
De Lisio, Michael P. +6 more
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Fully integrated CMOS power amplifier design using the distributed active-transformer architecture [PDF]
, 2002 A novel on-chip impedance matching and power-combining method, the distributed active transformer is presented. It combines several low-voltage push-pull amplifiers efficiently with their outputs in series to produce a larger output power while ...
Aoki, Ichiro +3 more
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IET Circuits, Devices and Systems, 2023 A new approach to increasing the power-added efficiency (PAE) of a class E power amplifier (PA) is proposed in this paper. The PA operates at a 5 GHz frequency and a reactance compensation technique is utilized to maximize the bandwidth at the operating ...
Hemad Heidari Jobaneh
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The Struggle for Federal Food and Drugs Legislation [PDF]
, 1933 In this paper we evaluate the application of convex optimization for PAPR reduction on OFDM 802.11a signal type. A radio frequency power amplifier is measured and characterized while excited by both original and optimized OFDM signals.
Björsell, Niclas +2 more
core +3 more sources