Results 151 to 160 of about 21,355 (312)
Electrified Damage in Motion Systems
Advanced Engineering Materials, EarlyView.The electrified damage in motion systems is a fundamental framework presenting the degradation pathway arising from the coupling of electrical energy transport with mechanical contact and interfacial chemistry. The framework positions electrified damage as a distinct degradation regime with unique characteristic surface morphologies and failures of ...
M. Humaun Kabir +2 more
wiley +1 more source
Advanced Engineering Materials, EarlyView.Functionally graded metal–ceramic femoral stems are engineered through continuous UMAT‐based stiffness tailoring, eliminating discrete material interfaces while enhancing biomechanical compatibility. Low‐index power‐law gradation optimizes load transfer, reduces stress shielding, and controls implant–bone micromotion, highlighting a materials‐design ...
Rihem Nouira, Sameh Elleuch, Hanen Jrad
wiley +1 more source
LOW POWER SI-BASED POWER AMPLIFIER FOR HEALTHCARE APPLICATION
, 2016 Objective: The objective of this research was to design a 2.4 GHz class B Power Amplifier (PA), with 0.18um Semiconductor Manufacturing International Corporation (SMIC) CMOS technology by using Cadence software, for health care applications. The ultimate
Li, Cheng, Gu, Heng, Cai, Wei
core +1 more source
A Ku-Band 13 W GaN HEMT Power Amplifier MMIC with a Coupled-Line Interstage Stabilization Technique for Radar Sensor Systems. [PDF]
Sensors (Basel)Kim J.
europepmc +1 more source
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Wide band high-efficiency power amplifier design
, 2011 This paper presents a hybrid (passive & active) power amplifier concept for a wideband high drain efficiency power amplifier design. The proposed design integrates for the first time a dual-band PA with an active second harmonic injection to achieve ...
Tasker, Paul J. +4 more
core
Multi-Objective Optimization Design of Doherty Power Amplifier Circuits Based on Non-Dominated Sorting Genetic Algorithm-II. [PDF]
Micromachines (Basel)Qu H, Zhang X, Gao S, Yan S.
europepmc +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
Advanced Functional Materials, EarlyView.This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
A 68-83-GHz power amplifier in 90 nm standard CMOS
, 2013 [[abstract]]A balanced PA covering 68-83 GHz is developed in 90 nm CMOS. Using wideband power matching topology, the PA achieves power gain of greater than 18.1 dB from 68 to 83 GHz and gain flatness within 0.2 dB from 68 to 78 GHz.
Jeffrey Lee;Chung-Chun Chen;Jeng-Han Tsai;Kun-You Lin;Huei Wang
core
A 6-18 GHz High-Efficiency GaN Power Amplifier Using Transistor Stacking and Reactive Matching. [PDF]
Micromachines (Basel)Wang C +6 more
europepmc +1 more source