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Amping Up the PA for 5G: Efficient GaN Power Amplifiers with Dynamic Supplies

IEEE Microwave Magazine, 2017
Signals designed for high-capacity communications result in high peak-to-average ratio (PAR) waveforms that the transmitter power amplifier (PA) must amplify with low distortion. With emerging fifth-generation (5G) wireless systems, carrier frequencies and signal bandwidths are expected to increase significantly from the current S- and C-band ...
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Power Amplifier (PA) System Stability Analysis

2016
Generally, large signal or Power Amplifier (PA) are used in the output stages of audio amplifier systems to derive a loudspeaker load. Power amplifier must be able to supply the high peak currents required to drive the low impedance speaker. One method used to distinguish the electrical characteristics of different types of amplifiers is by “class ...
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An analytical thermal and stress analysis tool for die attach optimization in GaN power amplifier (PA) applications

2012 IEEE 14th Electronics Packaging Technology Conference (EPTC), 2012
Die attach is a crucial ingredient of the overall solution to ensure that a PA device can function with acceptable junction temperature during peak power operation over the target service life, while mitigating thermo-mechanical stresses incurred by the mismatch of coefficients of thermal expansion between GaN device and substrate materials during ...
null Quan Qi, D. Monthei
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A Technical Foundation for RF CMOS Power Amplifiers: Part 4: Misunderstandings in PA Design

IEEE Solid-State Circuits Magazine, 2016
This fourth part of the article series "A Technical Foundation for RF CMOS Power Amplifiers" [1] presents five misunderstandings regarding wireless signals and amplifier design that persist in the literature and generally cause confusion, particularly for engineers new to this art.
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A 140-GHz 0.25-W PA and a 55-135 GHz 115-135 mW PA, High-Gain, Broadband Power Amplifier MMICs in 250-nm InP HBT

2019 IEEE MTT-S International Microwave Symposium (IMS), 2019
Two high-gain, broadband power amplifier MMICs are reported. The first result is a 140-GHz 0.25-W PA. It utilizes 5-gain stages and 4-way power combining. S 21 gain is 29.4-dB. It demonstrates over 0.21-W P out across 110-150 GHz. 0.25-W P out at 140-GHz requires 4-dBm P in – the associated gain is 16-dB with 7.0% PAE. The 140-GHz OP 1dB 1-dB gain
Zach Griffith   +2 more
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The Development of Microwave Power Amplifiers and Nonlinear Measurement Systems:Is the Measurement Systems Manufacturer still Lead by the PA Designer?

2013 21st Telecommunications Forum Telfor (TELFOR), 2013
Developments within modern nonlinear measurement systems offer an increasing degree of flexibility to the microwave power amplifier (PA) designer. The PA designer has historically been a driving factor in setting the development directions of new measurement systems, fueling the paradigm, that PA innovations largely push new measurement requirements ...
Mikkelsen, Jan H.; id_orcid 0000-0003-2366-8831   +5 more
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A 28.3 mW PA-Closed Loop for Linearity and Efficiency Improvement Integrated in a $+$27.1 dBm WCDMA CMOS Power Amplifier

IEEE Journal of Solid-State Circuits, 2012
A low-cost, fully integrated CMOS PA is attractive. The main challenge is to improve its power efficiency. Although many linearization and efficiency improvement techniques have been proposed, most of these techniques are based on feed-forward, which may not be effective under varying PVT and load conditions [1–3].
Shouhei Kousai   +4 more
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A Technical Foundation for RF CMOS Power Amplifiers: Part 6: Relating Envelope Tracking and Polar PA Operation

IEEE Solid-State Circuits Magazine, 2016
This article completes the series based on my presentation in the Advanced RF CMOS Transmitter Techniques Forum at the 2015 International Solid State Circuits Conference. This article series provides more details than the presentation time at the forum allowed.
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Real-time FPGA-based baseband predistortion of W-CDMA 3GPP high-efficiency power amplifiers: Comparing GaN HEMT and Si LDMOS predistorted PA performances

2009 European Microwave Conference (EuMC), 2009
We carry out a comparative design study on two high-efficiency power amplifiers (a second-harmonic tuning LD-MOS and a Doherty GaN-based amplifier) linearized through baseband digital predistortion so as to comply with the W-CDMA 3GPP standard with acceptable efficiency. Several predistortion schemes (both memoryless and with memory) were tried, having
QUAGLIA, ROBERTO   +7 more
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A 26 GHz Doherty power amplifier and a fully integrated 2×2 PA in 0.15μm GaN HEMT process for heterogeneous integration and 5G

2018 IEEE MTT-S International Wireless Symposium (IWS), 2018
A 26 GHz Doherty power amplifier MMIC and a fully integrated 2×2 PA array based on the DPA are presented in this paper. The Doherty power amplifier using 0.15μm GaN HEMT technology, achieves maximum small signal gain of 13.6 dB and saturated output power of over 32 dBm in 24–28 GHz, with peak PAE of 21.7%, and 6 dB back-off PAE of 20% at 26 GHz.
Runnan Guo, Hongqi Tao, Bin Zhang
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