Results 261 to 270 of about 5,748,011 (307)
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Amping Up the PA for 5G: Efficient GaN Power Amplifiers with Dynamic Supplies
IEEE Microwave Magazine, 2017Signals designed for high-capacity communications result in high peak-to-average ratio (PAR) waveforms that the transmitter power amplifier (PA) must amplify with low distortion. With emerging fifth-generation (5G) wireless systems, carrier frequencies and signal bandwidths are expected to increase significantly from the current S- and C-band ...
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International Symposium on Electromagnetic Compatibility - EMC EUROPE, 2012
Investigation on conductive electromagnetic pulse (EMP) effects on performance degradation and breakdown of GaAs MESFET-based power amplifiers (PA) are performed in this paper. One special measurement system is built, which consists of an adjustable EMP source, one controller, couplers, limiters, attenuators, one four-channel oscilloscope, and DUT. The
Liang Zhou +3 more
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Investigation on conductive electromagnetic pulse (EMP) effects on performance degradation and breakdown of GaAs MESFET-based power amplifiers (PA) are performed in this paper. One special measurement system is built, which consists of an adjustable EMP source, one controller, couplers, limiters, attenuators, one four-channel oscilloscope, and DUT. The
Liang Zhou +3 more
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2013 21st Telecommunications Forum Telfor (TELFOR), 2013
Developments within modern nonlinear measurement systems offer an increasing degree of flexibility to the microwave power amplifier (PA) designer. The PA designer has historically been a driving factor in setting the development directions of new measurement systems, fueling the paradigm, that PA innovations largely push new measurement requirements ...
Jan H. Mikkelsen +5 more
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Developments within modern nonlinear measurement systems offer an increasing degree of flexibility to the microwave power amplifier (PA) designer. The PA designer has historically been a driving factor in setting the development directions of new measurement systems, fueling the paradigm, that PA innovations largely push new measurement requirements ...
Jan H. Mikkelsen +5 more
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IEEE Microwave Magazine, 2017
Applications for space technology, test equipment, electronic warfare systems, and digital radio have made wide-band power amplifiers (WBPAs) the subject of research since 1948 [1], [2]. More recently, the advent of gallium nitride (GaN) technology with its special features, such as wide bandgap, high output power capability, and high electron velocity,
Ali Ghavidel +3 more
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Applications for space technology, test equipment, electronic warfare systems, and digital radio have made wide-band power amplifiers (WBPAs) the subject of research since 1948 [1], [2]. More recently, the advent of gallium nitride (GaN) technology with its special features, such as wide bandgap, high output power capability, and high electron velocity,
Ali Ghavidel +3 more
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2012 IEEE 14th Electronics Packaging Technology Conference (EPTC), 2012
Die attach is a crucial ingredient of the overall solution to ensure that a PA device can function with acceptable junction temperature during peak power operation over the target service life, while mitigating thermo-mechanical stresses incurred by the mismatch of coefficients of thermal expansion between GaN device and substrate materials during ...
null Quan Qi, D. Monthei
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Die attach is a crucial ingredient of the overall solution to ensure that a PA device can function with acceptable junction temperature during peak power operation over the target service life, while mitigating thermo-mechanical stresses incurred by the mismatch of coefficients of thermal expansion between GaN device and substrate materials during ...
null Quan Qi, D. Monthei
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A Technical Foundation for RF CMOS Power Amplifiers: Part 4: Misunderstandings in PA Design
IEEE Solid-State Circuits Magazine, 2016This fourth part of the article series "A Technical Foundation for RF CMOS Power Amplifiers" [1] presents five misunderstandings regarding wireless signals and amplifier design that persist in the literature and generally cause confusion, particularly for engineers new to this art.
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2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020
Two high-gain, high power-added-efficiency (PAE) G-band solid-state power amplifier (SSPA) MMICs operating between 160–183 GHz are reported. Both utilize an identical five-stage gain-lane, and on-chip combining of these gain-lanes satisfies the output power (Pout) objectives. The first result is a 0.24-W PA using 4-way power combining.
Zach Griffith +3 more
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Two high-gain, high power-added-efficiency (PAE) G-band solid-state power amplifier (SSPA) MMICs operating between 160–183 GHz are reported. Both utilize an identical five-stage gain-lane, and on-chip combining of these gain-lanes satisfies the output power (Pout) objectives. The first result is a 0.24-W PA using 4-way power combining.
Zach Griffith +3 more
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Pulse-Width Modulation Class-D Radio-Frequency Power Amplifier (RF PA)
SSRN Electronic JournalPower Electronics applications have long employed switching techniques including pulse-width and pulse-density modulation. Because semiconductor technology is growing so quickly, blocks in the radio architecture may benefit from similar strategies. The implementation of a class-D power amplifier for radiofrequency applications in low-GHz frequency ...
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2019 IEEE MTT-S International Microwave Symposium (IMS), 2019
Two high-gain, broadband power amplifier MMICs are reported. The first result is a 140-GHz 0.25-W PA. It utilizes 5-gain stages and 4-way power combining. S 21 gain is 29.4-dB. It demonstrates over 0.21-W P out across 110-150 GHz. 0.25-W P out at 140-GHz requires 4-dBm P in – the associated gain is 16-dB with 7.0% PAE. The 140-GHz OP 1dB 1-dB gain
Zach Griffith +2 more
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Two high-gain, broadband power amplifier MMICs are reported. The first result is a 140-GHz 0.25-W PA. It utilizes 5-gain stages and 4-way power combining. S 21 gain is 29.4-dB. It demonstrates over 0.21-W P out across 110-150 GHz. 0.25-W P out at 140-GHz requires 4-dBm P in – the associated gain is 16-dB with 7.0% PAE. The 140-GHz OP 1dB 1-dB gain
Zach Griffith +2 more
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Over A Century of Electronic Power Amplifiers from D(oherty)PAs to D(igital)PAs Slides
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