Results 251 to 260 of about 113,694 (304)

Power Amplifier (PA) Transistors Fatigue Life Prediction under Thermo-Mechanical Cyclic Loading

7th. Int. Conf. on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2006
In this paper, a simulation procedure was established for the fatigue life prediction of transistor assembly system under thermo-mechanical cyclic loading condition. By combining non-linear finite element (FE) methodology and test data, the failure mechanisms of transistor assembly system in response to thermal cyclic loading condition were ...
null Jianjun Wang, null Weiqun Peng, null Wei Ren   +2 more
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Hybrid Supply Modulator for High Power RF PA with Non-Inverting Amplifier

2019 IEEE Conference on Antenna Measurements & Applications (CAMA), 2019
In this paper, we design a Hybrid Supply Modulator (HSM) based on Non-Inverting Amplifier for High Power Amplifier (HPA) operating in C-band. Compared with the conventional HSM, the Switching stage and the R-sense stage are eliminated to prevent the power consumption, and the Non-Inverting Amplifier is applied to the linear stage.
Kun Hee Ha, Il Ho Jung, Ho Jin Kang, Jin Seop Lee, Yu Min Kim, Choon Sik Cho   +5 more
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A novel time misalignment estimation algorithm for envelope tracking (ET) power amplifiers (PA)

2014 IEEE 25th Annual International Symposium on Personal, Indoor, and Mobile Radio Communication (PIMRC), 2014
In this paper, we present a novel algorithm for estimating the delay (dT) between the RF input of an RF power amplifier (PA) and the modulated supply voltage that is generated by an envelope tracking (ET) power modulator, also known as a power tracker.
Craig E. Rupp, Gerardo Orozco Valdes, Michael J. Lyons, Sean P. Ferguson, I Zakir Ahmed   +4 more
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Designing Outphasing RF Power Amplifier (LINC PA) for IoT Applications in Low Power 5G Wireless Network

2022
International Transaction Journal of Engineering, Management, & Applied Sciences & Technologies, 13, 12, 13A12G: 1 ...
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A Handy Dandy Doherty PA: A Linear Doherty Power Amplifier for Mobile Handset Application

IEEE Microwave Magazine, 2017
As wireless communications progress from second to fourth-generation (4G) systems, the information content drastically increases, requiring high-data-rate transmissions. For efficient use of precious spectrum resources, the modulated signals have wider bandwidths (BWs) and higher peak-toaverage power ratios (PAPRs) than previous generations of systems.
Cho, Yunsung, Kang, Daehyun, Moon, Kyunghoon, Jeong, Daechul, Kim, Bumman   +4 more
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Theory and Design Methodology for Reverse-Modulated Dual-Branch Power Amplifiers Applied to a 4G/5G Broadband GaN MMIC PA Design

IEEE Transactions on Microwave Theory and Techniques, 2021
This article presents a generalized theory and new design methodology for reverse-load-modulated dual-branch (RMDB) power amplifiers (PAs), which uses a current-biased transistor in the main branch to realize optimal load modulation without using the impedance transformers at the output of the PAs.
Yulong Zhao, Xiang Li, Chao Gai, Chang Liu, Tian Qi, Biao Hu, Xin Hu, Wenhua Chen, Mohamed Helaoui, Fadhel M. Ghannouchi   +9 more
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GaN Widening Possibilties for PAs : Wide-band GaN Power Amplifiers Utilize the Technology's Special Properties

IEEE Microwave Magazine, 2017
Applications for space technology, test equipment, electronic warfare systems, and digital radio have made wide-band power amplifiers (WBPAs) the subject of research since 1948 [1], [2]. More recently, the advent of gallium nitride (GaN) technology with its special features, such as wide bandgap, high output power capability, and high electron velocity,
Ali Ghavidel, Farshid Tamjid, Aly Fathy, Ali Kheirdoost   +3 more
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High-Efficiency Power Amplifier for 1.8 MHz: The Development of a Class-E PA With Components for High Efficiency

IEEE Microwave Magazine, 2020
High efficiency is especially important for portable equipment and other applications where low power consumption is required. Consequently, power efficiency has been thoroughly discussed and investigated over the past few decades [7]. From this research, a number of different approaches and technologies have evolved for power amplifiers (PAs) and used
Markus Heinrichs, Rainer Kronberger
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Investigation on conductive electromagnetic pulse (EMP) effects on the breakdown of GaAs MESFET-built power amplifiers (PA)

International Symposium on Electromagnetic Compatibility - EMC EUROPE, 2012
Investigation on conductive electromagnetic pulse (EMP) effects on performance degradation and breakdown of GaAs MESFET-based power amplifiers (PA) are performed in this paper. One special measurement system is built, which consists of an adjustable EMP source, one controller, couplers, limiters, attenuators, one four-channel oscilloscope, and DUT. The
Liang Zhou, Liang Lin, Wei Luo, Wen-Yan Yin   +3 more
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A 160-183 GHz 0.24-W (7.5% PAE) PA and 0.14-W (9.5% PAE) PA, High-Gain, G-band Power Amplifier MMICs in 250-nm InP HBT

2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020
Two high-gain, high power-added-efficiency (PAE) G-band solid-state power amplifier (SSPA) MMICs operating between 160–183 GHz are reported. Both utilize an identical five-stage gain-lane, and on-chip combining of these gain-lanes satisfies the output power (Pout) objectives. The first result is a 0.24-W PA using 4-way power combining.
Zach Griffith, Miguel Urteaga, Petra Rowell, Lan Tran   +3 more
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