Results 271 to 280 of about 21,355 (312)
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2012 IEEE 14th Electronics Packaging Technology Conference (EPTC), 2012
Die attach is a crucial ingredient of the overall solution to ensure that a PA device can function with acceptable junction temperature during peak power operation over the target service life, while mitigating thermo-mechanical stresses incurred by the mismatch of coefficients of thermal expansion between GaN device and substrate materials during ...
null Quan Qi, D. Monthei
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Die attach is a crucial ingredient of the overall solution to ensure that a PA device can function with acceptable junction temperature during peak power operation over the target service life, while mitigating thermo-mechanical stresses incurred by the mismatch of coefficients of thermal expansion between GaN device and substrate materials during ...
null Quan Qi, D. Monthei
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A Technical Foundation for RF CMOS Power Amplifiers: Part 4: Misunderstandings in PA Design
IEEE Solid-State Circuits Magazine, 2016This fourth part of the article series "A Technical Foundation for RF CMOS Power Amplifiers" [1] presents five misunderstandings regarding wireless signals and amplifier design that persist in the literature and generally cause confusion, particularly for engineers new to this art.
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2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020
Two high-gain, high power-added-efficiency (PAE) G-band solid-state power amplifier (SSPA) MMICs operating between 160–183 GHz are reported. Both utilize an identical five-stage gain-lane, and on-chip combining of these gain-lanes satisfies the output power (Pout) objectives. The first result is a 0.24-W PA using 4-way power combining.
Zach Griffith +3 more
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Two high-gain, high power-added-efficiency (PAE) G-band solid-state power amplifier (SSPA) MMICs operating between 160–183 GHz are reported. Both utilize an identical five-stage gain-lane, and on-chip combining of these gain-lanes satisfies the output power (Pout) objectives. The first result is a 0.24-W PA using 4-way power combining.
Zach Griffith +3 more
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2019 IEEE MTT-S International Microwave Symposium (IMS), 2019
Two high-gain, broadband power amplifier MMICs are reported. The first result is a 140-GHz 0.25-W PA. It utilizes 5-gain stages and 4-way power combining. S 21 gain is 29.4-dB. It demonstrates over 0.21-W P out across 110-150 GHz. 0.25-W P out at 140-GHz requires 4-dBm P in – the associated gain is 16-dB with 7.0% PAE. The 140-GHz OP 1dB 1-dB gain
Zach Griffith +2 more
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Two high-gain, broadband power amplifier MMICs are reported. The first result is a 140-GHz 0.25-W PA. It utilizes 5-gain stages and 4-way power combining. S 21 gain is 29.4-dB. It demonstrates over 0.21-W P out across 110-150 GHz. 0.25-W P out at 140-GHz requires 4-dBm P in – the associated gain is 16-dB with 7.0% PAE. The 140-GHz OP 1dB 1-dB gain
Zach Griffith +2 more
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2018 IEEE MTT-S International Wireless Symposium (IWS), 2018
A 26 GHz Doherty power amplifier MMIC and a fully integrated 2×2 PA array based on the DPA are presented in this paper. The Doherty power amplifier using 0.15μm GaN HEMT technology, achieves maximum small signal gain of 13.6 dB and saturated output power of over 32 dBm in 24–28 GHz, with peak PAE of 21.7%, and 6 dB back-off PAE of 20% at 26 GHz.
Runnan Guo, Hongqi Tao, Bin Zhang
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A 26 GHz Doherty power amplifier MMIC and a fully integrated 2×2 PA array based on the DPA are presented in this paper. The Doherty power amplifier using 0.15μm GaN HEMT technology, achieves maximum small signal gain of 13.6 dB and saturated output power of over 32 dBm in 24–28 GHz, with peak PAE of 21.7%, and 6 dB back-off PAE of 20% at 26 GHz.
Runnan Guo, Hongqi Tao, Bin Zhang
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2012 42nd European Microwave Conference, 2012
After providing an introduction to active antenna systems (AAS) for cellular infrastructure, this paper presents power amplifier (PA) modules based on a balanced configuration of 2-8 fully integrated Doherty MMIC PAs. To our knowledge for the first time, a module with four Doherty MMIC PAs in a balanced configuration has been fabricated and tested. For
Udo Karthaus +4 more
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After providing an introduction to active antenna systems (AAS) for cellular infrastructure, this paper presents power amplifier (PA) modules based on a balanced configuration of 2-8 fully integrated Doherty MMIC PAs. To our knowledge for the first time, a module with four Doherty MMIC PAs in a balanced configuration has been fabricated and tested. For
Udo Karthaus +4 more
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Over A Century of Electronic Power Amplifiers from D(oherty)PAs to D(igital)PAs Slides
Webinar ...openaire +1 more source
2009 European Microwave Conference (EuMC), 2009
We carry out a comparative design study on two high-efficiency power amplifiers (a second-harmonic tuning LD-MOS and a Doherty GaN-based amplifier) linearized through baseband digital predistortion so as to comply with the W-CDMA 3GPP standard with acceptable efficiency. Several predistortion schemes (both memoryless and with memory) were tried, having
QUAGLIA, ROBERTO +7 more
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We carry out a comparative design study on two high-efficiency power amplifiers (a second-harmonic tuning LD-MOS and a Doherty GaN-based amplifier) linearized through baseband digital predistortion so as to comply with the W-CDMA 3GPP standard with acceptable efficiency. Several predistortion schemes (both memoryless and with memory) were tried, having
QUAGLIA, ROBERTO +7 more
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IEEE Solid-State Circuits Magazine, 2016
This article completes the series based on my presentation in the Advanced RF CMOS Transmitter Techniques Forum at the 2015 International Solid State Circuits Conference. This article series provides more details than the presentation time at the forum allowed.
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This article completes the series based on my presentation in the Advanced RF CMOS Transmitter Techniques Forum at the 2015 International Solid State Circuits Conference. This article series provides more details than the presentation time at the forum allowed.
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2011
The objective is to detect the impact of PVT variations (Process, Voltage and Temperature variations) on the figures of merit of a device.
Martín, Mikel +1 more
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The objective is to detect the impact of PVT variations (Process, Voltage and Temperature variations) on the figures of merit of a device.
Martín, Mikel +1 more
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