Results 1 to 10 of about 372,404 (253)

Devices for express diagnostics of power semiconductor devices and semiconductor converters [PDF]

Омский научный вестник, 2023
The increase in the power of power semiconductor converters operated in the railway industry is associated with the use of group connections of power semiconductor devices in them, the variation in the parameters of which, and, therefore, their ...
E. B. Koroleva, S. M. Kurmashev, K. K. Kim, A. A. Tkachuk, A. A. Kuznetsov   +4 more
doaj   +3 more sources

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band. [PDF]

Sensors (Basel), 2023
Tang H, Yang C, Qin L, Liang L, Lei Y, Jia P, Chen Y, Wang Y, Song Y, Qiu C, Zheng C, Li X, Li D, Wang L.   +13 more
europepmc   +3 more sources

A Review of Diamond Materials and Applications in Power Semiconductor Devices. [PDF]

Materials (Basel)
Zhao F, He Y, Huang B, Zhang T, Zhu H.
europepmc   +2 more sources

R&D of 3 300V SiC MOSFET With Embedded SBD

Zhongguo dianli, 2021
In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky ...
Guoyou LIU, Haihui LUO, Chenzhan LI, Guan Song   +3 more
doaj   +1 more source

Power semiconductor devices [PDF]

1981 IEEE Power Electronics Specialists Conference, 1981
openaire   +2 more sources

Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

Scientific Reports, 2021
Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature ...
Dengkui Wang, Xian Gao, Jilong Tang, Xuan Fang, Dan Fang, Xinwei Wang, Fengyuan Lin, Xiaohua Wang, Rui Chen, Zhipeng Wei   +9 more
doaj   +1 more source

A Review of Thermal Design for IGBT Module

Zhongguo dianli, 2020
In this paper, the thermal characteristics and thermal design of IGBT module are reviewed. Firstly, the thermal network model and its dependence on the packaging material’s thermal performance and dimensions are addressed.
Guoyou LIU, Yangang WANG, Haihui LUO, Fang QI, Xiang LI, Yibo WU   +5 more
doaj   +1 more source

Miniaturization and Thermal Design of a 170 W AC/DC Battery Charger Utilizing GaN Power Devices

IEEE Open Journal of Power Electronics, 2022
This paper presents the design and analysis of a high-density two-stage battery charger for mid-power applications like small electric vehicles and high-performance laptops utilizing gallium nitride (GaN) power devices.
Julian Weimer, Dominik Koch, Maximilian Nitzsche, Jorg Haarer, Jorg Roth-Stielow, Ingmar Kallfass   +5 more
doaj   +1 more source

Switching Performance of a 3.3-kV SiC Hybrid Power Module for Railcar Converters

IEEE Access, 2020
The unique properties of a SiC hybrid 3.3-kV/450-A half-bridge IGBT power module which is designed for enhanced reliability of railcar converters are presented in this paper.
Xiang Li, Daohui Li, Guiqin Chang, Matthew Packwood, Daniel Pottage, Arthur Su, Yangang Wang, Haihui Luo, Guoyou Liu   +8 more
doaj   +1 more source

Defect Profiling of Oxide‐Semiconductor Interfaces Using Low‐Energy Muons

Advanced Materials Interfaces, 2023
Muon spin rotation with low‐energy muons (LE‐µSR) is a powerful nuclear method where electrical and magnetic properties of surface‐near regions and thin films can be studied on a length scale of ≈200 nm.
Maria Mendes Martins, Piyush Kumar, Judith Woerle, Xiaojie Ni, Ulrike Grossner, Thomas Prokscha   +5 more
doaj   +1 more source