Results 31 to 40 of about 7,048,832 (98)

Design of Pulse Power Supply for High-Power Semiconductor Laser Diode Arrays

open access: yesIEEE Access, 2019
This paper mainly introduces a design circuit and control method of pulse power supply for high-power semiconductor laser diode arrays. According to the high voltage and large current operating characteristics of semiconductor laser, the control strategy
Qinglin Zhao   +4 more
semanticscholar   +1 more source

Structurally optimized SiC CMOS FinFET for high-temperature and low-power SoC logic integration

open access: yesScientific Reports
A high-temperature-operable binary inverter was designed through structural optimization of SiC-based CMOS FinFETs using 3D TCAD simulations. A FinFET architecture was incorporated into SiC CMOS with an optimized fin structure to overcome the critical ...
Tae Seong Kwon   +7 more
doaj   +1 more source

Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical Limiting

open access: yesNanomaterials
As an emerging two-dimensional (2D) Group-VA material, bismuth selenide (Bi2Se3) exhibits favorable electrical and optical properties. Here, three distinct morphologies of Bi2Se3 were obtained from bulk Bi2Se3 through electrochemical intercalation ...
Hao Yan   +11 more
doaj   +1 more source

Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment

open access: yesNanoscale Research Letters, 2019
ZnO nanowires play a very important role in optoelectronic devices due to the wide bandgap and high exciton binding energy. However, for one-dimensional nanowire, due to the large surface to volume ratio, surface traps and surface adsorbed species acts ...
Haolin Li   +8 more
doaj   +1 more source

Overview of high voltage sic power semiconductor devices: development and application

open access: yes, 2017
Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has attracted much attention in recent years. This paper overviews the development and status of HV SiC devices. Meanwhile, benefits of HV SiC devices are presented.
Shiqi Ji, Zheyu Zhang, Fred Wang
semanticscholar   +1 more source

In-Service Diagnostics for Wire-Bond Lift-off and Solder Fatigue of Power Semiconductor Packages

open access: yesIEEE transactions on power electronics, 2017
Wire-bond lift-off and Solder fatigue are degradation mechanisms that dominate the lifetime of power semiconductor packages. Although their lifetime is commonly estimated at the design stage, based on mission profiles and physics-of-failure models, there
Mohd. Amir Eleffendi, C. M. Johnson
semanticscholar   +1 more source

Laser fabrication of MXene-based planar micro-supercapacitors

open access: yesFrontiers in Chemistry
This mini-review summarizes recent advances in MXene-based planar micro-supercapacitors fabricated by laser technologies. Laser ablation enables ultrafast maskless patterning, laser cutting achieves mechanically adaptive flexible arrays, and laser ...
Qian-Kun Li   +6 more
doaj   +1 more source

STM/STS Study of the Density of States and Contrast Behavior at the Boundary between (7 × 7)N and (8 × 8) Structures in the SiN/Si(111) System

open access: yesCrystals, 2022
The origin of the contrast appearing in STM images at the boundary between diverse ordered structures is studied using the example of two structures, (7 × 7)N and (8 × 8), formed in the system of a two-dimensional silicon nitride layer on the Si(111 ...
Vladimir Mansurov   +5 more
doaj   +1 more source

First-principle calculations of Sb2S3 energy bands and electronic structures with different crystallization degrees

open access: yesAIP Advances
Based on first-principles density functional theory, crystal structure models of antimony sulfide (Sb2S3) in three distinct crystalline states were constructed and the physical properties of these states were investigated.
Wanting Xiang   +8 more
doaj   +1 more source

Thermal Mapping of Power Semiconductors in H-Bridge Circuit

open access: yesApplied Sciences, 2020
In this paper, a universal H-bridge circuit is used as a loading emulator to investigate the loss and thermal models of the power semiconductor. Based on its operation principle and modulation method, the dominating factors’ (e.g., power factor, loading ...
Dao Zhou   +4 more
doaj   +1 more source

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