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Automotive Power Semiconductor Devices
2005Commercially available power semiconductor devices can be categorized into several basic types such as diodes, thyristors, bipolar junction transistors (BJT), power metal oxide semiconductor field effect transistors (MOSFET), insulated gate bipolar transistors (IGBT), and gate turn-off thyristors.
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Physics of semiconductor power devices
Reports on Progress in Physics, 1982Semiconductor power devices are designed to rapidly switch or amplify high currents, to support high voltages, and to control electric power. Because of these requirements, their topographies and structures are different from those of small-signal devices. Specific designs are the result of the understanding of the physics of p-n junction HV breakdown,
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Power Electronics Semiconductor Devices
20091. Power MOSFET transistors, Pierre Aloisi.2. Insulated gate bipolar transistors (IGBT), Pierre Aloisi.3. Serial or paralleled connected power transistors, Daniel Chatroux, Jean-Luc Schanen.4. Silicon carbide devices and their applications, Marie-Laure Locatelli, Dominique Planson.5.
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Power semiconductor devices: an overview
Proceedings of the IEEE, 1988Advances in power semiconductor devices are discussed, focusing on the adaptation of silicon integrated circuit wafer processing methods to the design and fabrication of power devices. Some basic properties of power devices are reviewed, along with recent adaptations of wafer processing technology.
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Power semiconductor devices, PESC, 1976
1976 IEEE Power Electronics Specialists Conference, 1976Discrete power semiconductors and other electrical components have demanding applications today that require new sophistication in design, characterization, and performance. Voltage and power levels, as well as switching speeds available in thyristors and transistors, make additional knowledge of dynamic characteristics essential.
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