Results 191 to 200 of about 41,472 (260)

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Magnetic‐Field Modulation of Charge Transport in Non‐Fullerene Semiconductors for Enhanced Hydrogen Evolution

open access: yesAdvanced Materials Interfaces, EarlyView.
ABSTRACT This study demonstrates that weak magnetic fields (16–40 mT) increase the efficiency of the hydrogen evolution reaction (HER) in electrocatalysts based on non‐fullerene acceptor (NFA) derivatives IT‐4Cl and Y6. Electrochemical measurements reveal that the application of the magnetic field reduces the onset potential and increases the current ...
João Paulo Araujo Souza   +7 more
wiley   +1 more source

Label‐Free Detection of a Neurotransmitter Using an Aptamer‐Functionalized Amorphous IGZO Transistor

open access: yesAdvanced Materials Interfaces, EarlyView.
An aptamer‐functionalized amorphous IGZO thin‐film transistor enables label‐free electrical detection of the neurotransmitter serotonin under liquid‐gated operation. Stepwise surface functionalization ensures stable biomolecule integration and efficient electrostatic coupling.
Ngoc Thanh Ho   +3 more
wiley   +1 more source

High-Performance Infrared Photodetectors Based on Graphene Nanoribbon Vertical Heterojunctions via Dissociated Double-Walled Carbon Nanotubes. [PDF]

open access: yesNanomaterials (Basel)
Li Z   +14 more
europepmc   +1 more source

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