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Recent Advances and Perspectives on Field-Effect Transistors for Artificial Visual Neuromorphic Systems. [PDF]
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Trends in power semiconductor devices
IEEE Transactions on Electron Devices, 1996This paper reviews recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems. In the case of low voltage ( 100 V) power rectifiers, the silicon P-i-N rectifier continues to dominate but significant improvements are expected by the introduction of the silicon MPS rectifier ...
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Power semiconductor devices: an overview
Proceedings of the IEEE, 1988Advances in power semiconductor devices are discussed, focusing on the adaptation of silicon integrated circuit wafer processing methods to the design and fabrication of power devices. Some basic properties of power devices are reviewed, along with recent adaptations of wafer processing technology.
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2015
Many industrial applications require control of power such as in variable speed drives, light-intensity controllers, temperature regulators etc. They are controlled by Power devices such as four-layer devices, semiconductor controlled rectifiers (SCRs) etc.
K. M. Gupta, Nishu Gupta
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Many industrial applications require control of power such as in variable speed drives, light-intensity controllers, temperature regulators etc. They are controlled by Power devices such as four-layer devices, semiconductor controlled rectifiers (SCRs) etc.
K. M. Gupta, Nishu Gupta
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2012
Power semiconductor devices are one of the core constituent elements of state-of-the-art power electronic applications. They are employed in a plethora of applications ranging from DC–DC converters, rectifiers, inverters, AC–AC converters, and so on.
Dongsheng Ma, Rajdeep Bondade
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Power semiconductor devices are one of the core constituent elements of state-of-the-art power electronic applications. They are employed in a plethora of applications ranging from DC–DC converters, rectifiers, inverters, AC–AC converters, and so on.
Dongsheng Ma, Rajdeep Bondade
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Power semiconductor devices — continuous development
Microelectronics Journal, 1996Abstract After recalling the breakthroughs in the area of power semiconductor devices which appeared during the 1980s and their impact on power electronics applications, the present status and future trends in the development of power semiconductor devices are briefly reviewed, and the educatiobal needs for people engaged in this area are pointed out.
N. STOJADINOVIC, SPIRITO, PAOLO
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A Development Summarization of the Power Semiconductor Devices II
IETE Technical Review, 2011AbstractFor Silicon-on-Insulator (SOI) Lateral Double-diffused MOSFET (LDMOS), the new technologies, which apply the electric field modulation and charge shielding effects to design new kinds of SOI LDMOS, have been developed in this paper on the basis of several typical lateral high-voltage devices designed by the authors. The trade-off characteristic
Baoxing Duan, Yintang Yang
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2004
The most important step in the history of semiconductor devices was the discovery of the transistor effect in a semiconductor material by Bardeen and Brattain [1] and Shockley [2] at the end of the 1940s. This invention stimulated the further development of power semiconductor devices.
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The most important step in the history of semiconductor devices was the discovery of the transistor effect in a semiconductor material by Bardeen and Brattain [1] and Shockley [2] at the end of the 1940s. This invention stimulated the further development of power semiconductor devices.
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2015
In this chapter, the characteristics of high-voltage SiC IGBT, SiC MOSFET, SiC junction gate field-effect transistor (JFET), and low-voltage SiC MOSFET are discussed.
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In this chapter, the characteristics of high-voltage SiC IGBT, SiC MOSFET, SiC junction gate field-effect transistor (JFET), and low-voltage SiC MOSFET are discussed.
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The future of power semiconductor device technology
Proceedings of the IEEE, 2001Power electronic systems have benefited greatly during the past ten years from the revolutionary advances that have occurred in power discrete devices. The introduction of power metal-oxide-semiconductor field-effect transistors (MOSFETs) in the 1970s and the insulated gate bipolar transistors (IGBTs) in the 1980s enabled design of very compact high ...
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