Results 141 to 150 of about 2,624 (204)

A highly reliable press packed IGBT

Electrical Engineering in Japan, 2000
A newly developed press packed reverse conducting IGBT (RCIGBT), the ST1000EX21, having ratings of 2500 V and 1000 A, has successfully been introduced in high-reliability application areas. A multiple-chip press packed RCIGBT structure, containing IGBT chips and fast recovery diode (FRD) chips, has been achieved by using basic experimental results and ...
Hideo Matsuda, Noriyasu Kawamura, Michiaki Hiyoshi, Satoshi Teramae, Kazunobu Nishitani   +4 more
openaire   +1 more source

Mechanical analysis of press-pack IGBTs

Microelectronics Reliability, 2012
Abstract At present two packages for IGBT devices are available for applications in the MW power range: the bonded power module and the press-pack housing. Power modules have been object of extensive research including their thermo-mechanical characterisation under variable operating conditions and the analysis of their failure mechanisms.
T. Poller, T. Basler, M. Hernes, S. D’Arco, J. Lutz   +4 more
openaire   +1 more source

PETT oscillation characteristics in press pack IGBTs

2017 Sixth Asia-Pacific Conference on Antennas and Propagation (APCAP), 2017
Plasma Extraction Transit Time (PETT) oscillation exists in the tail phase during the turn-off process of paralleled IGBT chips. The small signal behaviors of space charge region caused by injection of carriers is analyzed in this paper. Then, the relationship between package parasitic inductance and oscillating voltage range is investigated.
Xinling Tang, Yan Pan, Peng Zhang, Jinyuan Li, Rui Jin, Zhibin Zhao, Xiang Cui   +6 more
openaire   +1 more source

Snubbered high-power press-pack IGBT converter

2013 15th European Conference on Power Electronics and Applications (EPE), 2013
A medium-voltage IGBT converter with turn-on snubber is presented. The drastic reduction of turn-on losses allows the inverter to reach a peak output power well beyond the 12-MVA mark. The paper discusses the design challenges for the new inverter and presents test results.
Thomas Bruckner, Piotr Sadowski, Roland Jakob   +2 more
openaire   +1 more source

Location optimize of press-pack IGBT chip

2019 20th International Conference on Electronic Packaging Technology(ICEPT), 2019
In this work, we optimize the chip's location of press-pack IGBT from the point of view of multiple physical fields. First, based on the actual structure of the press-pack IGBT device, the multiple physical field model was established to analyze of Electro-thermal-mechanical coupling model by finite element method.
Yang Liu, Xu Liu, Geli Aori, Jun Li, Huaiyu Ye, Sau Wee Koh, Guoqi Zhang   +6 more
openaire   +1 more source

Insulation Simulation Analysis of Press-Pack IGBT

2019 IEEE 3rd International Electrical and Energy Conference (CIEEC), 2019
In high voltage applications such as power grid and rail transportation, IGBT devices generally operate under very harsh conditions, which places high demands on device reliability. In this paper, the electric field distribution of silicon chip termination area and press-pack IGBT package structure under high voltage reverse bias experimental ...
Yuzhe Liu, Chaoqun Jiao, Zhibin Zhao, Chengzong Pang, Yuanliang Fan   +4 more
openaire   +1 more source

Overview of pressure measurement methods in press pack IGBTs

IET Conference Proceedings, 2021
Press pack IGBTs (PP IGBTs) have been widely used in various types of high-voltage and large-capacity power converters and control equipment in smart grids. The measurement method research of the multi-physical parameters in press pack IGBTs is beneficial to solve the multi-physical coupling problems involved, guide the design of more effective device ...
Z. Chen, Y. Li, M. Cui, X. Yang
openaire   +1 more source

Possible failure modes in Press-Pack IGBTs

Microelectronics Reliability, 2015
Abstract Reliability of Press-Pack IGBTs is a topic with limited published data and information. This paper presents results of a power cycling test with state-of-the-art high power devices. An accelerated lifetime test scheme was defined, and six out of eight devices were tested until failure.
Lukas Tinschert, Atle Rygg Årdal, Tilo Poller, Marco Bohlländer, Magnar Hernes, Josef Lutz   +5 more
openaire   +1 more source

Analysis for thermal contact resistance of Press-Pack IGBTs

2021 22nd International Conference on Electronic Packaging Technology (ICEPT), 2021
Press-pack insulated gate bipolar transistors (IGBT) have a multilayer structure, which is clamped by pressure. The IGBT chip generates heat and forms the temperature gradient in the multilayer structure during work. Due to different coefficient of thermal expansion of multilayer structure, temperature and clamping force will lead constant changes in ...
Yakun Zhang, Tong An, Fei Qin, Yanpeng Gong, Chen Liang   +4 more
openaire   +1 more source

Thermo-Mechanical Simulation Of A Multichip Press-Packed Igbt

MRS Proceedings, 1997
AbstractThe reliability of press-packed integrated gate bipolar transistors (IGBT) depends on satisfactory contact conditions applied at assembly stage and mantained throughout the service life. The objective of this work is the simulation of the thermo-structural behavior of a multichip IGBT during initial assembly and subsequent uniform thermal ...
PIRONDI, Alessandro, NICOLETTO, Gianni, COVA, Paolo, PASQUALETTI M, PORTESINE M, ZANI P. E.   +5 more
openaire   +2 more sources