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2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2021
Yujie Du +6 more
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Yujie Du +6 more
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Influence of Temperature on the Pressure Distribution Within Press Pack IGBTs
IEEE Transactions on Power Electronics, 2018Press pack (PP) packaging technology has been applied to insulated-gate bipolar transistors (IGBTs) for high-voltage and high power density applications in recent years. The pressure distribution within PP IGBTs is very important because it affects both the electrical and thermal contact resistances, thermal cycling capability, and short-circuit ...
Erping Deng +4 more
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Asymmetrical Press-Pack IGBT for Modular Multilevel Converter
2023 IEEE Sustainable Power and Energy Conference (iSPEC), 2023Lingqi Tan +6 more
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Managing power semiconductor obsolescence by press-pack IGBT substitution
2005 European Conference on Power Electronics and Applications, 2005Press-pack IGBTs are identified as a possible replacement for obsolete power semiconductor technology. Traction power electronic systems using thyristor technology are compared to those substituted with press-pack IGBTs, with and without additional modifications to optimise performance.
A. Golland, F. Wakeman, G. Li
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An Integrated Packaging Structure of Press Pack for High Power IGBTs
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019An Integrated packaging structure of press pack for high power IGBTs is proposed, in view of the shortcomings of Pedestal and Stakpak press pack IGBTs. The simplified model of the three packaging structures were simulated by finite element method. The simulation results reveal the pressure distribution on chip surfaces of the Integrated press pack IGBT
Erping Deng +5 more
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Development of Press-pack IGBT Chip for good SOA Capability
2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE), 2019In this paper, the advantages of press-pack IGBT in DC circuit breaker are introduced. According to the requirement of press package for IGBT chip, a cell structure with field oxide in active region was designed, and the optimal value of the field oxide length was obtained.
Li Li +5 more
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Overview and Prospect of the Aging Mechanism of Press-pack IGBTs
2023 IEEE International Conference on Energy Internet (ICEI), 2023Yuxin Wang +5 more
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Thermo-mechanical structural analysis of a press-packed IGBT
1997In this study stresses and strains in a press-packed integrated gate bipolar transistor (IGBT) due to assembly and thermal cycling were determined by the Finite Element method. 2D and 3D models of the device were developed including an elastic-plastic material description and the contact simulation using the ABAQUS code.
NICOLETTO, Gianni +8 more
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