Results 101 to 110 of about 139 (129)
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Influence of Temperature on the Pressure Distribution Within Press Pack IGBTs

IEEE Transactions on Power Electronics, 2018
Press pack (PP) packaging technology has been applied to insulated-gate bipolar transistors (IGBTs) for high-voltage and high power density applications in recent years. The pressure distribution within PP IGBTs is very important because it affects both the electrical and thermal contact resistances, thermal cycling capability, and short-circuit ...
Erping Deng   +4 more
openaire   +1 more source

15kV Press Pack SiC IGBT

2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2021
Yujie Du   +6 more
openaire   +1 more source

Managing power semiconductor obsolescence by press-pack IGBT substitution

2005 European Conference on Power Electronics and Applications, 2005
Press-pack IGBTs are identified as a possible replacement for obsolete power semiconductor technology. Traction power electronic systems using thyristor technology are compared to those substituted with press-pack IGBTs, with and without additional modifications to optimise performance.
A. Golland, F. Wakeman, G. Li
openaire   +1 more source

Asymmetrical Press-Pack IGBT for Modular Multilevel Converter

2023 IEEE Sustainable Power and Energy Conference (iSPEC), 2023
Lingqi Tan   +6 more
openaire   +1 more source

Parasitic Consideration of Package Design within Press Pack IGBT

Applied Mechanics and Materials, 2013
Simulation technology provides a powerful tool for the package design. Parasitic are one of the most important factors for press pack IGBT. By the aid of the simulation software, the package parasitic is extracted and the current distribution among paralleled chips is analyzed. Simulation results confirm the theoretical analysis and verify the efficacy
Peng Zhang   +9 more
openaire   +1 more source

An Integrated Packaging Structure of Press Pack for High Power IGBTs

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019
An Integrated packaging structure of press pack for high power IGBTs is proposed, in view of the shortcomings of Pedestal and Stakpak press pack IGBTs. The simplified model of the three packaging structures were simulated by finite element method. The simulation results reveal the pressure distribution on chip surfaces of the Integrated press pack IGBT
Erping Deng   +5 more
openaire   +1 more source

Integrated Approach for Reliability Assessment of Press-pack IGBT Chips

2000
Product development in the power electronic industry is characterized by short time-to-market and high reliability. Improved design methods and advanced modeling techniques are therefore required to support package design selection and to arrive at lifetime prediction algorithms for failure prevention.
NICOLETTO, Gianni   +2 more
openaire   +2 more sources

Thermo-mechanical structural analysis of a press-packed IGBT

1997
In this study stresses and strains in a press-packed integrated gate bipolar transistor (IGBT) due to assembly and thermal cycling were determined by the Finite Element method. 2D and 3D models of the device were developed including an elastic-plastic material description and the contact simulation using the ABAQUS code.
NICOLETTO, Gianni   +8 more
openaire   +1 more source

Overview and Prospect of the Aging Mechanism of Press-pack IGBTs

2023 IEEE International Conference on Energy Internet (ICEI), 2023
Yuxin Wang   +5 more
openaire   +1 more source

Lifetime prediction for press pack IGBT device by considering fretting wear failure

Microelectronics Reliability, 2023
Ran Yao, Wei Lai, Xianping Chen
exaly  

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