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Harmonic Resonances in Wind Power Plants:Modeling, Analysis and Active Mitigation Methods [PDF]
Bak, Claus Leth +6 more
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International Study Group Progress Report On Linear Collider Development [PDF]
Adolphsen, C E +137 more
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Methodologies for Wind Turbine and STATCOM Integration in Wind Power Plant Models for Harmonic Resonances Assessment [PDF]
Bak, Claus Leth +4 more
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IEEE Transactions on Power Electronics, 2023
Unbalance of transient currents of multiple chips inside press-pack insulated-gate bipolar transistor (PP IGBT) results in degrading operation and even device damage. Chip currents measurement plays an essential role to understand and solve this problem.
Shi Fu +6 more
semanticscholar +3 more sources
Unbalance of transient currents of multiple chips inside press-pack insulated-gate bipolar transistor (PP IGBT) results in degrading operation and even device damage. Chip currents measurement plays an essential role to understand and solve this problem.
Shi Fu +6 more
semanticscholar +3 more sources
IEEE Transactions on Power Electronics, 2022
Press-pack insulated gate bipolar transistor (IGBT) devices have multiple chips paralleled to enhance their power density. However, the current imbalance among chips limits the increase of the power, which is mainly attributed to external factors, like ...
Cheng Peng +5 more
semanticscholar +3 more sources
Press-pack insulated gate bipolar transistor (IGBT) devices have multiple chips paralleled to enhance their power density. However, the current imbalance among chips limits the increase of the power, which is mainly attributed to external factors, like ...
Cheng Peng +5 more
semanticscholar +3 more sources
IEEE Transactions on Power Electronics, 2022
Thermal contact resistances usually account for more than 50% of the total thermal resistance in a press-pack insulated-gate bipolar transistor (PP-IGBT) device, which affect the heat dissipation of the PP-IGBT device and lead to a high junction ...
Xiao Wang +7 more
semanticscholar +3 more sources
Thermal contact resistances usually account for more than 50% of the total thermal resistance in a press-pack insulated-gate bipolar transistor (PP-IGBT) device, which affect the heat dissipation of the PP-IGBT device and lead to a high junction ...
Xiao Wang +7 more
semanticscholar +3 more sources
Short-Circuit Capability Optimization of Press-Pack IGBT by Improving Active Edge Heat Dissipation
IEEE Transactions on Power Electronics, 2023Press-pack insulated gate bipolar transistor (PP-IGBT) device has been widely used in VSC-HVdc converters. Research on the optimization method of short-circuit capability is crucial to improve the short-circuit robustness and reliability of PP-IGBT ...
Yue Yu +5 more
semanticscholar +3 more sources
A Thermal Twin Modeling Method of Press Pack IGBT Based on Power Loss
IEEE Transactions on Electron Devices, 2022The thermal modeling of a press pack insulated gate bipolar transistor (PP-IGBT) is crucial for device reliability estimation and operation management.
Hui Li +7 more
semanticscholar +3 more sources
IEEE Transactions on Electron Devices, 2023
Precise measurements of the double-sided thermal resistance of press-pack insulated gate bipolar transistors (PP IGBTs) are challenging because of their special packaging and operating conditions. This article presents a method for calculating the double-
Chunsheng Guo +9 more
semanticscholar +3 more sources
Precise measurements of the double-sided thermal resistance of press-pack insulated gate bipolar transistors (PP IGBTs) are challenging because of their special packaging and operating conditions. This article presents a method for calculating the double-
Chunsheng Guo +9 more
semanticscholar +3 more sources

