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IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021
A press pack insulated gate bipolar transistor (PP IGBT) device consists of multiple materials. Under the influence of alternating current and clamping force, the device suffers from complex thermomechanical stress.
Hui Li +7 more
semanticscholar +3 more sources
A press pack insulated gate bipolar transistor (PP IGBT) device consists of multiple materials. Under the influence of alternating current and clamping force, the device suffers from complex thermomechanical stress.
Hui Li +7 more
semanticscholar +3 more sources
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021
Press pack insulated gate bipolar transistor (PP IGBT) is suitable for the hybrid high voltage direct current (HVdc) breaker to clear the fault current of the flexible HVdc transmission system with its advantages of double-side cooling, short-circuit ...
E. Deng +6 more
semanticscholar +3 more sources
Press pack insulated gate bipolar transistor (PP IGBT) is suitable for the hybrid high voltage direct current (HVdc) breaker to clear the fault current of the flexible HVdc transmission system with its advantages of double-side cooling, short-circuit ...
E. Deng +6 more
semanticscholar +3 more sources
A Study on the Failure Evolution to Short Circuit of Nanosilver Sintered Press-Pack IGBT
IEEE Transactions on Components, Packaging and Manufacturing Technology, 2020In order to improve the heat dissipation capability of high-power press-pack insulated gate bipolar transistor (PP-IGBT), the nanosilver paste was utilized to package a single 3.3-kV/50-A PP-IGBT chip; we called it sintered pack IGBT (SP-IGBT) in this ...
Hui Li +6 more
semanticscholar +3 more sources
Lifetime prediction for press pack IGBT device by considering fretting wear failure
Microelectronics Reliability, 2023Ran Yao +5 more
semanticscholar +3 more sources
Asymmetrical Press-Pack IGBT for Modular Multilevel Converter
2023 IEEE Sustainable Power and Energy Conference (iSPEC), 2023In modular multilevel converter (MMC) systems, it’s important to improve the effectiveness and dependability of power semiconductor devices. In order to improve the chip utilization and lower the peak junction temperature, based on the practical upper ...
Tan Lingqi +6 more
openaire +2 more sources
Press Pack IGBTs for MVDC-breaker Applications
ISPS'23 Proceedings, 2023With the rising demand for higher power densities and robust system control, the need for using press pack IGBT (PPI) devices in medium voltage (MV) applications is also increasing. So far PPI manufacturers have majorly focused on devices with paralleling of IGBTs/diodes inside a single housing, that drives thousands of Amperes and is used for high ...
Koushik Sasmal +4 more
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A highly reliable press packed IGBT
Electrical Engineering in Japan, 2000A newly developed press packed reverse conducting IGBT (RCIGBT), the ST1000EX21, having ratings of 2500 V and 1000 A, has successfully been introduced in high-reliability application areas. A multiple-chip press packed RCIGBT structure, containing IGBT chips and fast recovery diode (FRD) chips, has been achieved by using basic experimental results and ...
Hideo Matsuda +4 more
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Mechanical analysis of press-pack IGBTs
Microelectronics Reliability, 2012Abstract At present two packages for IGBT devices are available for applications in the MW power range: the bonded power module and the press-pack housing. Power modules have been object of extensive research including their thermo-mechanical characterisation under variable operating conditions and the analysis of their failure mechanisms.
T. Poller +4 more
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PETT oscillation characteristics in press pack IGBTs
2017 Sixth Asia-Pacific Conference on Antennas and Propagation (APCAP), 2017Plasma Extraction Transit Time (PETT) oscillation exists in the tail phase during the turn-off process of paralleled IGBT chips. The small signal behaviors of space charge region caused by injection of carriers is analyzed in this paper. Then, the relationship between package parasitic inductance and oscillating voltage range is investigated.
Xinling Tang +6 more
openaire +1 more source
Snubbered high-power press-pack IGBT converter
2013 15th European Conference on Power Electronics and Applications (EPE), 2013A medium-voltage IGBT converter with turn-on snubber is presented. The drastic reduction of turn-on losses allows the inverter to reach a peak output power well beyond the 12-MVA mark. The paper discusses the design challenges for the new inverter and presents test results.
Thomas Bruckner +2 more
openaire +1 more source